• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.178-180
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• 1994

In recent days, the inverter is widely used at the industrial applications. In the range lower than 100[kW], IGBT(Insulated Gate Bipolar Transistor) is most widely used as the switching device. In that case of IGBT, the rising time and the filling time are very short(about $200[ns]{\sim}300[ns]$). Especially for motor control applications, the switching frequency is required to be increased for better dynamic performance of the drive. However, the higher switching frequency leads to the unexpected problem occurs such as voltage spike due to stray inductance in the bus at switching instant. In this paper, a new methodology for reducing the stray inductance existing in the bus that induces the voltage spike will be presented.

• Journal of IKEEE
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• v.11 no.4
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• pp.158-164
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• 2007

In this study, three types of a novel Trench IGBTs(Insulated Gate Bipolar Transistor) are proposed. The first structure has P-collector which is isolated by $SiO_2$ layer to enhance anode-injection-efficiency and enable the device to have a low on-state voltage drop(Von). And the second structure has convex P-base region between both gates. This structure may be effective to distributes electric-field crowded to gate edge. So this structure can have higher breakdown voltage(BV) than conventional trench-type IGBT(TIGBT). The process and device simulation results show improved on-state, breakdown and switching characteristics in each structure. The first one was presented lower on state voltage drop(2.1V) than that of conventional one(2.4V). Also, second structurehas higher breakdown voltage(1220V) and faster turn off time(9ns) than that of conventional structure. Finally, the last one of the proposed structure has combined the two structure (the first one and second one). This structure has superior electric characteristics than conventional structure about forward voltage drop and blocking capability, turnoff characteristics.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.6 no.3
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• pp.168-173
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• 2013

In this paper, we tried different two approach to improve the performance of the IGBT. The first approach is that adding N+ region beside P-base in the conventional IGBT. It can make the conventional IGBT to get faster turn-off time and lower conduction loss. The second approach is that adding P+ region on right side under gate to improve latching current of conventional IGBT. The device simulation results show improved on-state, latch-up and switching characteristics in each structure. The first one was presented lower voltage drop(3.08V) and faster turn-off time(3.4us) than that of conventional one(3.66V/3.65us). Also, second structure has higher latching current(369A/?? ) that of conventional structure. Finally, we present a novel IGBT combined the first approach with second one for improved trade-off characteristic between conduction and turn-off losses. The proposed device has better performance than conventional IGBT.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.2
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• pp.230-234
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• 1996

A new trenched Hybrid Schottky INjection Field Effect Transistor (HSINFET) is proposed and verified by 2-D semiconductor device simulation. The feature of the proposed structure is that the hybrid Schottky injector is implemented at the trench sidewall and p-n junction injector at the upper sidewall and bottom of a trench. Two-dimensional simulation has been performed to compare the new HSINFET with the SINFET, conventional HSINFET and lateral insulated gate bipolar transistor(LIGBT). The numerical results shows that the current handling capability of the proposed HSINFET is significantly increased without sacrificing turn-off characteristics. The proposed HSINFET exhibits higher latch-up current density and much faster switching speed than the lateral IGBT. The forward voltage drop of the proposed HSINFET is 0.4 V lower than that of the conventional HSINFET and the turn-off time of the trenched HSINFET is much smaller than that of LIGBT.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1356-1361
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• 2018

Replacing conventional Si diodes with SiC diodes in Si insulated gate bipolar transistor (IGBT) modules is advantageous as it can reduce power losses significantly. Also, the fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present conventional Si diodes cannot do. In this work, the electrical test results for Si-IGBT/4HSiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. These substrates are built for two voltage ratings, 1.7 kV and 3.3 kV. Comparisons of the 1.7 kV and the 3.3 kV Si-IGBT/Si-diode substrates (Si substrates) at room temperature ($20^{\circ}C$, RT) and high temperature ($H125^{\circ}C$, HT) have shown that the switching losses in hybrid SiC substrates are miniscule as compared to those in Si substrates but necessary steps are required to mitigate the ringing observed in the current waveforms. Also, the effect of design variations on the electrical performance of 1.7 kV, 50 A diodes is reported here. These variations are made in the active and termination regions of the device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.403-409
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• 2007

In this paper, effects of the trench angle($\theta$) on the breakdown voltage according to the process parameters of p-base region and doping concentrations of n-drift region in a Trench Gate IGBT (TIGBT) device were analyzed by computer simulation. Processes parameters used by variables are diffusion temperature, implant dose of p-base region and doping concentration of n-drift region, and aspects of breakdown voltage change with change of each parameter were examined. As diffusion temperature of the p-base region increases, depth of the p-base region increases and effect of the diffusion temperature on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 134.8 % in the case of high trench angle($90\;^{\circ}$). Moreover, as implant dose of the p-base region increases, doping concentration of the p-base region increases and effect of the implant dose on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 232.1 % in the case of high trench angle($90\;^{\circ}$). These phenomenons is why electric field concentrated in the trench is distributed to the p-base region as the diffusion temperature and implant dose of the p-base increase. However, effect of the doping concentration variation in the n-drift region on the breakdown voltage varies just 9.3 % as trench angle increases from $45\;^{\circ}$ to $90\;^{\circ}$. This is why magnitude of electric field concentrated in the trench changes, but direction of that doesn't change. In this paper, respective reasons were analyzed through the electric field concentration analysis by computer simulation.

• Journal of Power Electronics
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• v.13 no.4
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• pp.729-736
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• 2013

Knowledge of a power semiconductor's operating temperature is important in circuit design and converter control. Designing appropriate circuitry that does not affect regular circuit operation during virtual junction temperature measurement at actual operating conditions is a demanding task for engineers. The proposed method enables virtual junction temperature estimation with a dedicated modified gate driver circuit based on real-time measurement of a semiconductor's quasi-threshold voltage. A simulation was conducted before the circuit was designed to verify the concept and to determine the basic properties and potential drawbacks of the proposed method.

• Journal of Power Electronics
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• v.15 no.3
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• pp.610-620
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• 2015

An inherent zero-voltage and zero-current-switching phase-shifted full-bridge converter with reverse-blocking insulated-gate bipolar transistor (IGBT) or non-punch-through IGBT is proposed in this paper. This converter not only ensures that the switches in the lagging leg works at zero-current switching, but also minimizes circulating conduction loss without any additional auxiliary circuits. A 1.2 kW hardware prototype is designed, fabricated, and tested to verify the proposed topology. The control loop design procedures with small-signal models are also presented. A simple, low-cost, and robust democratic current-sharing circuit is also introduced and verified in this study. The proposed converter is a suitable alternative for compact, cost-effective applications with high-voltage input.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.2
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• pp.810-818
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• 2021

A leakage current of ESS is classified mainly by the occurrence from a PCS(Power Conditioning System) section and an unbalanced grid current. The reason for the leakage current from the PCS section is a voltage change by IGBT (Insulated Gate Bipolar Transistor) switching and stray capacitance between the IGBT and heatsink. The leakage current caused by the grid unbalanced current flows to the ESS through the neutral line of grid-connected transformer for the ESS with a three limb iron type of Yg-wire connection. This paper proposes a mechanism for the occurrence of leakage current caused by stray capacitance, which is calculated using the heatsink formula, from the aspect of the PCS section and grid unbalance current. Based on the proposed mechanisms, this study presents the modeling of the leakage current occurrence using PSCAD/EMTDC S/W and evaluates the characteristics of leakage currents from the PCS section and grid unbalanced current. From the simulation result, the leakage current has a large influence on the battery side by confirming that the leakage current from the PCS is increased from 7[mA] to 34[mA], and the leakage current from an unbalanced load to battery housing is increased from 3.96[mA] to 10.76[mA] according to the resistance of the housings and the magnitude of the ground resistance.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1816-1819
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• 2002

Nowadays, CO2 lasers are used widely in many applications such as materials fabrication, communications, remote sensing and military purpose etc. It is important to control the laser output power in those fields. In this paper, current resonant half-bridge inverter and Cockcraft-Walton circuit are used to vary the laser output power. This laser power supply is designed and fabricated which has less switching losses and compact size. Also we used an IGBT(Insulated Gate Bipolar Transistor) as a switching device of a power supply and PIC one-chip microprocessor are used to control the gate signal of the IGBT precisely. We investigated the output characteristics of this CO2 laser. As a result, the maximum laser output power of 26[W] is obtained at the resonant frequency of about 13[kHz].