• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.210.2-210.2
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• 2016

An inductively coupled plasma source was prepared for the deposition of a-C:H thin film. Properties of the inductively coupled plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe harmonic frequency were 13.56Mhz and 27.12Mhz. Dependencies of plasma parameters on process parameters were accord with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• Analytical Science and Technology
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• v.14 no.1
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• pp.21-27
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• 2001

In this work, analytical performance of a laboratory built double membrane desolvator (DMD) was studies using perfluoroalkoxy (PFA) nebulizer and microconcentirc nebulizer (MCN) in inductively coupled plasma atomic emission spectrometry. Compared with MCN, PFA nebulizer coupled to DMD showed similar analytical sensitivity for aqueous solution and better sensitivity for isopropyl alcohol. Since PFA resisted various acids, HCI, $H_2SO_4$ and HF solution were analyzed with less than 2% RSD. Rinse-out time for the signal reduction to 1% was obtained to be 35 s for PFA but about 45 s for MCN.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.772-778
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• 2005

In this paper, we designed the cylindrical type light source that had a electromagnetic principle of inductively coupled plasma, and measured its electrical-optical properties. Using the principle of transformer, electrically equivalent circuit of cylindrical type light source was analyzed. According to the parameters of electromagnetic induction which were diameter of coil with $0.3\~1.2\;mm{\Phi}$, number of turns with $4\~12$ turns, distance with $40\~120$ mm and RF power with $10\~150$ W, the electrical and optical properties were measured. When diameter of coil was $0.3\;mm{\Phi}$, number of turns was 8 turns and distance was 40 mm, the highest brightness of 29,730 $cd/m^2$ was shown with RF power 150 W. The relationship between electromagnetic induction and plasma discharges was shown by mode transition from E-mode to H-mode.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.570-575
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• 2002

The present tendency of electrical and electronics is concentrated on MEMS devices for advantage of miniaturization, intergration, low electric power and low cost. Therefore it is essential that high aspect ratio and high etch rate by HDP technology development, so that silicon deep trench etching reactions was studied by ICP equipment. Deep trench etching of silicon was investigated as function of platen power, etch step time of etch/passivation cycle time and SF$\_$6/:C$_4$F$\_$8/ flow rate. Their effects on etch profile, scallops, etch rate, uniformity and selectivity were also studied.

• Journal of Surface Science and Engineering
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• v.38 no.2
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• pp.73-78
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• 2005

A real-time monitoring of ICP(inductively coupled plasma) assisted magnetron sputtering of MgO was carried out using a QMS(quadrupole mass spectrometer), an OES(optical emission spectrometer), and a digital oscilloscope with a high voltage probe and a current monitor. At the time of ICP ignition, the most distinct impurity was OH emission (308.9 nm) which was dissociated from water molecules. For reactive deposition oxygen was added to Ar and the OH emission intensity was reduced abruptly When the discharge voltage was regulated by a PID controller from 240V(metallic mode) to 120V(oxide mode), the emission intensity from Mg (285.2 nm) changed proportionally to the discharge voltage, but the intensity of Ar I(811.6 nm) was constant. At 100V of discharge voltage, Mg sputtering was almost stopped. Emissions from Ar I(420.1 nm) and Mg I were dropped down to 1/10, but Ar I(811.6 nm) didn't change. And the emission from atomic oxygen (O I, 777.3 nm) was increased to 10 times. These results are compatible with those from QMS study.

• Journal of Surface Science and Engineering
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• v.38 no.2
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• pp.79-82
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• 2005

This study investigated the effect of nitriding on the hardness and adhesion properties of $TiB_2$ coatings. Inductively coupled plasma (ICP) was used for both nitriding and deposition. By applying ICP, H13 steel was nitrided at a high rate of $50\;{\mu}m/hr$. After nitriding, a Fe4N compound layer or a diffusion layer was formed according to the hydrogen/nitrogen ratio. Both layers could improve the load-bearing capacity of the substrate by increasing the substrate hardness. The adhesion of the $TiB_2$ coatings increased to $\~30N$ after nitriding, but the hardness of the coating was lowered to 20-30 GPa. However, the adhesion of the $TiB_2$ coatings with a high hardness (>60 GPa) could not be improved substantially by nitriding due to the large difference in hardness between the coating and the substrate. The grain size of the $TiB_2$ coating was larger on the nitrided substrates, resulting in a decrease in the hardness of the coating.

• Journal of Surface Science and Engineering
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• v.39 no.3
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• pp.98-104
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• 2006

Al-doped ZnO (AZO) films were deposited on the plastic substrate by inductively coupled plasma (ICP) assisted DC magnetron sputtering. The AZO films were produced by sputtering a metallic target (Zn/Al) in a mixture of argon and oxygen gases. AZO films with an electrical resistivity of ${\sim}10^3\;{\Omega}cm$ and an optical transmittance of 80% were obtained even at a low deposition temperature. In-situ process control methods were used to obtain stable deposition conditions in the transition region without any hysteresis effect. The target voltage was controlled either at a constant DC power. It was found that the ratio of the zinc to oxygen emission intensity, I (O 777)/I (Zn 481) decreased with increasing the target voltage in the transition region. The $Ar/O_2$ plasma treatment improve the adhesion strength between the polycarbonate substrate and AZO films.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.220-225
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• 2004

Four different Fluorine-based gases ($SF_6/,NF_3, PF_5,\; and \; BF_3$) were examined for high rate Inductively Coupled Plasma etching of Si. Etch rates up to ~8$\mu\textrm{m}$/min were achieved with pure $SF_6$ discharges at high source power (1500 W) and pressure (35 mTorr). A direct comparison of the four feedstock gases under the same plasma conditions showed the Si etch rate to increase in the order $BF_3$ < $NF_3$< $PF_5$ < $SF_6$. This is in good correlation with the average bond energies of the gases, except for $NF_3$, which is the least strongly bound. Optical emission spectroscopy showed that the ICP source efficiently dissociated $NF_3$, but the etched Si surface morphologies were significantly worse with this gas than with the other 3 gases.

• Bulletin of the Korean Chemical Society
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• v.26 no.12
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• pp.1991-1995
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• 2005

Sensitivity factors of elements by a glow discharge mass spectrometry (GD-MS) were intensively investigated and compared with a laser ablation inductively coupled plasma-mass spectrometry (ICP-MS). In case of copper matrix, the sensitivity factor by GD-MS generally decreases with the increase of the mass number of element. The details are a little different between each data measured by Faraday and multiplier detectors. The factor by a multiplier detector drastically decreases with the mass increase in the region of low mass as in Faraday detector’s case, but slowly in the high mass region. On the contrast, the sensitivity factor of solution standard by a conventional ICP-MS slowly increases with the increase of elemental mass number even though there are some exceptions such as gold and also the sensitivity factor by a laser ablation ICP MS generally increases with mass number of element in the specimen of glass type. In case of steel matrix, any definite trends could not be shown in the relationship between the GD-MS’s sensitivity factor and elemental mass.

• Analytical Science and Technology
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• v.17 no.5
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• pp.438-442
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• 2004

To determine the contents of $^{99}Tc$ in the spent PWR (pressurized water reactor) nuclear fuels by ICP-MS (inductively coupled plasma-mass spectrometry), a technetium separation method using an extraction chromatographic resin (TEVA Spec resin) has been established. $^{99}Tc$ was separated from a spent PWR nuclear fuel solution by this separation procedure and its concentration was determined by ICP-MS. The result agrees well with the value calculated by the program ORIGEN 2 and also the value measured by AG MP-1 resin/ICP-MS method described in our previous paper. It can be concluded that the present separation procedure is superior to the AG MP-1 resin procedure with respect to the time required for technetium separation as well as the efficiency of decontamination from other radioactive nuclides.