MgO 증착을 위한 유도결합 플라즈마 마그네트론 스퍼터링에서 실시간 공정 진단

A Real-Time Diagnostic Study of MgO Thin Film Deposition Process by ICP Magnetron Sputtering Method

  • 주정훈 (군산대학교 공과대학 재료 화학공학부)
  • Joo Junghoon (Kunsan National University, Department of Materials Science & Engineering)
  • 발행 : 2005.04.01

초록

A real-time monitoring of ICP(inductively coupled plasma) assisted magnetron sputtering of MgO was carried out using a QMS(quadrupole mass spectrometer), an OES(optical emission spectrometer), and a digital oscilloscope with a high voltage probe and a current monitor. At the time of ICP ignition, the most distinct impurity was OH emission (308.9 nm) which was dissociated from water molecules. For reactive deposition oxygen was added to Ar and the OH emission intensity was reduced abruptly When the discharge voltage was regulated by a PID controller from 240V(metallic mode) to 120V(oxide mode), the emission intensity from Mg (285.2 nm) changed proportionally to the discharge voltage, but the intensity of Ar I(811.6 nm) was constant. At 100V of discharge voltage, Mg sputtering was almost stopped. Emissions from Ar I(420.1 nm) and Mg I were dropped down to 1/10, but Ar I(811.6 nm) didn't change. And the emission from atomic oxygen (O I, 777.3 nm) was increased to 10 times. These results are compatible with those from QMS study.

키워드

참고문헌

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