• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.200-203
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• 2007

Devices of junction barrier schottky(JBS) structure using 4H-SiC substrates with wide energy band gaps was designed and fabricated. As a measurement results, the device of reverse I-V characteristics was shown as more than 1000 V, its design optimum length of p-grid was $3{\mu}m$ space. In this paper, I-V characteristics was modeled by using of device fabricated process conditions parameters and it was extracted that the I-V property parameters, and it was compared and analyzed with between device parameters and model parameters.

• Advances in nano research
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• v.5 no.1
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• pp.61-67
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• 2017

A semi-empirical approach to model the temperature effects on I-V characteristics of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model includes two thermal parameters describing CNTFET behaviour in terms of saturation drain current and threshold voltage, whose values are extracted from the simulated and trans-characteristics of the device in different temperature conditions. Our results are compared with those of a numerical model online available, obtaining I-V characteristics comparable but with a lower CPU calculation time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.377-380
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• 1997

In order to investigate the electrical characteristics due to the curing condition of silicone gel for Power Semiconductor, the V-I characteristics is studied. For experiment, We have made up several samples of different curing temperature and time such as 1[H],2[H] at 150[$^{\circ}C$], 160[$^{\circ}C$], 170[$^{\circ}C$]. As a result of the V-I characteristics, it is confirmed that the properties of specimen cured at 170[$^{\circ}C$], 2[H] is stable.

• Journal of the Korean Solar Energy Society
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• v.29 no.4
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• pp.1-6
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• 2009

This paper estimates numerically cells the electrical characteristics of the PV module with environmental changes such as shunt resistance, series resistance, temperature, irradiance. Series resistance $R_s$ including diode characteristic resistance $r_d$ is derived from the p-n junction diode model. I-V characteristics of this model with series resistance $R_s$ are simulated on Matlab. Finally, theoretical I-V characteristics are compared with those of solar simulator. Those results agreed well within the manufacturer's maximum error range 3%

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.557-562
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• 2009

Recently, researchers are developing a new, clean, renewable and sustainable energy to the industrial areas and the residential areas. Solar cell and fuel cell energy are presented in this paper. The paper shows the P-I and I-V characteristics of fuel cells which are connected in parallel and series. And the voltage drop of internal resistance of the fuel cell decreases with the increasing of the current of the fuel cell. A voltage drop at the internal resistance is increased according to the current, thus the terminal voltage is decreased. The internal resistance is calculated $0.3[\Omega]$ from maximum power transfer condition.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.176-183
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• 1995

The present work is concerned with the switching conduction characteristics of PI LB films in metal insulator metal sandwiches. By applying various DC voltage bias to MIM junctions, conduction characteristics of junctions can be changed between the high-voltage low-current(off) condition, the low-voltage high-current (on) condition and the medium(mid) condition. Switching conduction characteristics can be also observed in MIM junctions employing some aromatic compounds as insulators. Switching conduction characteristics is assumed to be owing to the existence of aromatic rings, space charge in films, impurities on metal-insulator interface, and difference in work functions of base and top electrodes metal. To study the conduction process of on, off, and mid conductions, we measured I-V, d$^{2}$V/d I$^{2}$-V characteristics of junctions with several different top electrodes under various temperatures. Small conductance changes of junctions can be measured by observing the second derivative, d$^{2}$V/dI$^{2}$, of I-V curve. A dynamical technique is used to get the second derivatives. That is, a finite modulation of the current is applied to the junctions and the second harmonic of the voltage is detected.

• 전기의세계
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• v.29 no.2
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• pp.111-117
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• 1980

Contacts formed by vacuum evaporation of As-Te-Si-Ge chalcogenide glass onto Al metal (99.9999%) are studied by measuring paralle capacitance C(V), Cp(w), resistance R(V), Rp(w), and I-V characteristics. The fact that contact metal alloying produced high-resistance region is confirmed from the measurements of parallel capacitance and resistance. From the I-V characteristics in the pre-switcing region, it is found that electronic conduction and sitching occurs in the vicinity of metal-amorphous semiconductor interface. From the experimental obsevations, it is concuded that the current flow in the thin film is space-charge limited current (SCLC) due to the tunneling of electrons through the energy barriers.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.486-489
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• 2002

In this paper, we have investigated characteristics of sub-50nm double gate MOSFET. From I-V characteristics, we obtained =510$\mu$A/${\mu}{\textrm}{m}$ at VMG=VDS=1.5V and VSG=3.0V. Then, the transconductance is 111$\mu$A/V, subthreshold slope is 86mV/dec and DIBL (Drain Induced Barrier Lowering) is 51.3mV. Also, we have presented that TCAD simulator is suitable for device simulation.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.37-40
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• 2000

This paper has been studied on characteristics of organic light-emitting device with various cathode materials. These catode materials were Al：Li(5%), Al, Cu, CsF/Al. And in these devices, HTL(hole transfer layer) was TPD and EML(emitting layer) was Alq$\sub$3/. We studied the I-V characteristics for each device. And then, the turn-on voltage of device for Al-Li(5%), Al, Cu, CsF/Al cathode were 7, 9, 13, 3V respectively. So, the CsF/Al cathode is superior to other cathode materials for I-V characteristics.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.602-608
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• 2009

In this thesis, output voltage, current and power of solar module were classified by irradiation from data of overall operating characteristics collected for one year in order to manage efficient photovoltaic generation system and deliver maximum power. In addition, from these data, correlations between irradiation of photovoltaic cell and amount of power given by photovoltaic cell was quantitatively examined to deduce optimization of the design and construction of photovoltaic generation system. As I-V characteristics according to a temperature range of 10~50[$^{\circ}C$], the area of I-V characteristics were increased with an increase in temperature. Since this area corresponds to the power, output power is thought to have increased with temperature. As output power characteristics according to a temperature range of 10~50[$^{\circ}C$], output power was increased with an increase in temperature. Since output power increases with temperature increase, the result corresponds well to the related equation on temperature and output power. As I-V characteristics according to a irradiation range of 100~900 [$W/m^2$], voltage and current were increased with an increase in irradiation. The result is thought of as an increase in output power with increasing irradiation. As output power characteristics according to a irradiation range of 100~900 [$W/m^2$], output power was increased with increasing irradiation. This result corresponds well to the related equation on irradiation and output power.