• Title/Summary/Keyword: Hysteresis characteristics

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Precision position control of piezoelectric actuator (압전액추에이터 정밀 위치 제어)

  • Yun S.;Kim C.Y.;Ham Y.B.;Jo J.;Ahn B.K.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.06a
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    • pp.531-536
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    • 2005
  • The purpose of this paper is to improve the hysteresis characteristics of a stack type piezoelectric actuator using system identification and tracking control. Recently, several printing methods that cost less and are faster than previous semiconductor processes have been developed for the production of electric paper and RFID. The system proposed in this study prints by spraying the molten metal, and consists of a nozzle, heating furnace, operating actuator, and an XYZ 3-axis stage, As an operating system, the piezoelectric(PZT) method has very valuable uses. However, the PZT actuator has a very big hysteresis characteristic due to the ferroelectric characteristics of the PZT element. This causes problems in the system position control characteristics and deteriorates the performance of the system. In this study, an investigation was conducted to improve the hysteresis characteristics of the PZT actuator that has an output displacement for the input voltage. The study proposed a inverse hysteresis model, a mathematic modeling method that can express the geometric relationship between voltage and displacement, in order to reduce the hysteresis of the PZT actuator. In addition, system identification and PID control methods were examined. Also, it was confirmed that the proposed control strategy gives good precision position control performance.

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A Study on the Method of Giving Hysteresis Characteristics to the Digital input port of Microprocessors (마이크로프로세서 디지털 입력포트에 대한 히스테리시스 특성 부여방법에 관한 연구)

  • Lee, Hyun-Chang
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.48 no.2
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    • pp.56-63
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    • 2011
  • This paper presents the method of giving hysteresis characteristics to the digital input port of microprocessors or micro-controllers and it's design procedures. And this paper shows the example of circuit design and the effect of this method by experiments. Presented method has advantages : By the additional one port and two resistors, input port can have hysteresis characteristics and hysteresis band is larger than TTL, CMOS schmitt trigger gates.

Voltage Source FEA for Hysteresis Motor using Preisach Model

  • Hong, Sun-Ki;Lee, Seok-Hee;Jung, Hyun-Kyo
    • KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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    • v.11B no.4
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    • pp.164-168
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    • 2001
  • In this paper voltage source FEA for hysteresis motor considering magnetic hysteresis characteristics is presented. The Preisach model is used as a hysteresis model. System matrix whose unknown variables are vector potentials and currents is formulated for voltage source. The stiffness matrix is maintained constant by using M-iteration method. Therefore the calculation time and efforts are reduced with Choleski direct method. Current waveform can be calculated for arbitrary voltage vaveform considering hysteresis effects.

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Hysteresis Characteristics of a SFCL using a Magnetic Coupling of Coils with an Iron Core of Two Magnetic Paths (두 개의 자기경로 철심을 갖는 코일의 자기결합을 이용한 초전도 전류제한기의 히스테리시스 특성)

  • Lim, Sung-Hun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.12
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    • pp.1073-1077
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    • 2009
  • The iron core, which comprises the superconducting fault current limiter (SFCL) using magnetic coupling of coils, can be operated in the saturation region, especially at the initial fault period. This operation of the iron core in the saturation region deteriorates the fault current limiting operation of the SFCL. To solve the saturation problem of the SFCL using magnetic coupling of coils, the iron core with two magnetic paths, which has an air-gap in one of them, was adopted. In this paper, the hysteresis characteristics of SFCL using magnetic coupling of coils, which were wound in the iron core with two magnetic paths, were analyzed. Through comparative analysis on the hysteresis characteristics of the iron core comprising SFCL, the hysteresis characteristics of the iron core with two magnetic paths were confirmed to be kept in the non-saturation region during the fault period and thus, the effective fault current limiting operation of the SFCL using the magnetic coupling of coils could be performed.

A Study on Adhesion Friction Characteristics of Rubber for Tire Tread

  • Oh, Yumrak;Jeon, Seong-hee;Lee, Dong Youm;Kim, Hak-Joo;Kim, Jeong-Heon
    • Elastomers and Composites
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    • v.54 no.4
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    • pp.299-307
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    • 2019
  • Rubber friction properties include adhesion friction characteristics of the interface, hysteresis friction characteristics originating from repeated rubber deformations, and cohesion friction characteristics due to wear and tear. Cohesion friction is generally sufficiently small (< 3%) that it can be ignored, whereas adhesion friction has a relatively large contribution of 15%, but has not been investigated thoroughly. Therefore, through an adhesion friction study, the adhesion mechanism was examined and the relationship between friction characteristics and adhesion friction on dry surfaces was derived. The wet grip characteristics of tread rubber are fully described by the hysteresis characteristics of tires, but friction characteristics on dry roads are difficult to determine without adhesion factors. The results presented herein demonstrate that the combination of hysteresis and adhesion properties in the tread rubber sufficiently explained the characteristics of the dry grip. Based on the results of this study, technologies will be developed to determine the key factors governing adhesion friction characteristics and improve dry tire braking performance.

Hysteresis Characteristics of a-Si:H TFT (비정질 실리콘 박막 트랜지스터 히스테리시스 특성)

  • 이우선;정용호;김남오;김병인;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.05a
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    • pp.43-46
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    • 1995
  • We fabricate a bottom gate a-Si:H TFT on N-Type <100> Si wafer. According to the variation of gate and drain voltage, the hysteresis characteristic curves were measured experimentally. Also, we showed that the model predict the hysteresis characteristic successfully. Drain current on the hysteresis characteristic currie showed an exponential variation. Hysteresis area of TFT increased with the drain voltage increase and decreases with the drain voltage decrease.

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Mathematical Modeling of Hysteresis Characteristics of a-Si:H TFT (비정질 실리코 박막 트랜지스터 히스테리시스 특성의 수학적인 모델)

  • Lee, Woo-Sun;Kim, Byung-In
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.43 no.7
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    • pp.1135-1143
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    • 1994
  • We fabricate a bottom gate a-Si:H TFT on N-Type <100> Si wafer. According to the Variation of gate and drain voltage, the hysteresis characteristic curves were measured experimentally. Also, we proposed model equation and showed that the model predict the hysteresis characteristic successfully. Drain current on the hysteresis characteristic curve showed an exponential variation. Hysteresis area of TFT increased with the drain voltage increase and decreases with the drain voltage decrease.

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The Effects of Eddy Currents and Hysteresis on the Performance of Inductive Position Sensor for Magnetic Bearings (자기베어링용 유도형 위치 센서의 성능에 미치는 와전류와 히스테레시스의 영향)

  • Noh, Myoung-Gyu;Jeong, Min-Kyoung
    • Proceedings of the KSME Conference
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    • 2001.06b
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    • pp.36-41
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    • 2001
  • The performance of an inductive position sensor is described by the accuracy and the dynamic characteristics of the sensor. Both of these performance indices are affected by magnetic hysteresis and eddy currents. In this paper, a model of an inductive sensor is presented. This model includes the effects of hysteresis and eddy currents. Computer simulation shows that the sensitivity of the sensor is greatly affected by hysteresis and eddy currents. Repeability error increases with hysteresis and eddy currents effects. Results also show that eddy currents influence more on the sensor performance than hysteresis does. To reduce the effects of hysteresis and eddy currents, the sensor should be made out of thin laminations with high resistivity.

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Modeling and Motion Control of Piezoelectric Actuator (비선형성을 고려한 압전소자의 모델링 및 운동제어)

  • 박은철;김영식;김인수
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2003.11a
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    • pp.630-637
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    • 2003
  • This paper proposes a new modeling scheme to describe the hysteresis and the dynamic characteristics of piezoelectric actuators in the inchworm and develops a control algorithm for the precision motion control. From the analysis of piezoelectric actuator behaviors, the hysteresis can be described by the functions of a maximum input voltage. The dynamic characteristics are also identified by the frequency domain modeling technique based on the experimental data. For the motion control, the hysteresis behavior is compensated by the inverse hysteresis model. The dynamic stiffness of an inchworm is generally low compared to its driving condition, so mechanical vibration may degenerate the motion accuracy of the inchworm. Therefore, the sliding mode control and the Kalman filter are developed for the precision motion control of the inch-warm. To demonstrate the effectiveness of the proposed modeling schemes and control algorithm, experiment validations are performed.

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Hysteresis Characteristics in Low Temperature Poly-Si Thin Film Transistors

  • Chung, Hoon-Ju;Kim, Dae-Hwan;Kim, Byeong-Koo
    • Journal of Information Display
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    • v.6 no.4
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    • pp.6-10
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    • 2005
  • The dependence of hysteresis characteristics in low temperature poly-Si (LTPS) thin film transistors (TFTs) on the gate-source voltage (Vgs) or the drain-source voltage (Vds) bias is investigated and discussed. The hysteresis levels in both p-type and n-type LTPS TFTs are independent of Vds bias but increase as the sweep range of Vgs increases. It has been found that the hysteresis in both p-type and n-type LTPS TFTs originated from charge trapping and de-trapping in the channel region rather than at the source/drain edges.