• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.29-33
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• 2000

MEMS, Micro Electro-Mechanical Systems, present one of the greatest advanced packaging challenges of the next decade. Historically hybrid technology, generally thick film, provided sensors and actuators while integrated circuit technologies provided the microelectronics for interpretation and control of the sensor input and actuator output. Brought together in MEMS these technical fields create new opportunities for miniaturization and performance. Integrated circuit processing technologies combined with hybrid design systems yield innovative sensors and actuators for a variety of applications from single crystal silicon wafers. MEMS packages, far more simple in principle than today's electronic packages, provide only physical protection to the devices they house. However, they cannot interfere with the function of the devices and often must actually facilitate the performance of the device. For example, a pressure transducer may need to be open to atmospheric pressure on one side of the detector yet protected from contamination and blockage. Similarly, an optical device requires protection from contamination without optical attenuation or distortion being introduced. Despite impediments such as package standardization and complexity, MEMS markets expect to double by 2003 to more than ＄9 billion, largely driven by micro-fluidic applications in the medical arena. Like the semiconductor industry before it. MEMS present many diverse demands on the advanced packaging engineering community. With focused effort, particularly on standards and packaging process efficiency. MEMS may offer the greatest opportunity for technical advancement as well as profitability in advanced packaging in the first decade of the 21st century! This paper explores MEMS packaging opportunities and reviews specific technical challenges to be met.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.24-24
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• 2003

Metallic magnetoelectronic devices have studied intensively and extensively for last decade because of the scientific interest as well as great technological importance. Recently, the scientific activity in spintronics field is extending to the hybrid devices using ferromagnetic/semiconductor heterostructures and to new ferromagnetic semiconductor materials for future devices. In case of the hybrid device, conductivity mismatch problem for metal/semiconductor interface will be able to circumvent when the device operates in ballistic regime. In this respect, spin-valve transistor, first reported by Monsma, is based on spin dependent transport of hot electrons rather than electron near the Fermi energy. Although the spin-valve transistor showed large magnetocurrent ratio more than 300%, but low transfer ratio of the order of 10$\^$-5/ prevents the potential applications. In order to enhance the collector current, we have prepared magnetic tunneling transistor (MTT) with single ferromagnetic base on Si(100) collector by magnetron sputtering process. We have changed the resistance of tunneling emitter and the thickness of baser layer in the MTT structure to increase collector current. The high transfer ratio of 10$\^$-4/ range at bias voltage of more than 1.8 V, collector current of near l ${\mu}$A, and magnetocurrent ratio or 55% in Si-based MTT are obtained at 77K. These results suggest a promising candidate for future spintronic applications.

• Journal of Korean Association for Spatial Structures
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• v.22 no.4
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• pp.31-38
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• 2022

In this study, an incremental loading test of the HRS(Hybrid Rubber Slit) damper was additionally performed to define the physical characteristics according to the incremental test results, and an analytical study was performed according to the damping design procedure by selecting an example structure. As a result of performing seismic performance evaluation before reinforcement by selecting a RC structure similar to an actual school structure as an example structure, the story drift ratio was satisfied, but some column members collapsed due to bending deformation. In order to secure the seismic performance, the damping design procedure of the HRS damper was presented and performed. As a result of calculating the amount of damping device according to the expected damping ratio and applying it to the example structure, the hysteresis behavior was stable without decrease in strength, and the story drift ratio and the shear force were reduced according to the damping effect. Finally the column members that had collapsed before reinforcement satisfied the LS Level.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.815-818
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• 1998

The Insulated Gate Bipolar Transistor has the characteristics of MOSFET and BJT. The characteristics of proposed device exhibit high speed switching, the voltage controlled property, and the low ON resistance. This hybrid device has been used and developed continuously in the power electronic engineering field. We can simulate many IGBT circuits, such as the motor drive circuit, the switching circuits etc, with PSpice. However, some problems in PSpice is that the IGBT is old-fashioned and is very difficult to get it. In this paper, the IGBT in PSpice is considered as the basic structure. We changed the valuse of base width, gate-drain overlaping area, device area, and doping concentration, then calculated MOS transconductance, ambipolar recombination lifetime etc. Using this resultant parameter, we could predict the transient response characteristicsof IGBT, for examplex, voltage overshoot, the rising curve of voltage, and the falling curve of current.

• Journal of Information Processing Systems
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• v.13 no.2
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• pp.268-284
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• 2017

The dorsal hand vein biometric system developed has a main objective and specific targets; to get an electronic signature using a secure signature device. In this paper, we present our signature device with its different aims; respectively: The extraction of the dorsal veins from the images that were acquired through an infrared device. For each identification, we need the representation of the veins in the form of shape descriptors, which are invariant to translation, rotation and scaling; this extracted descriptor vector is the input of the matching step. The optimization decision system settings match the choice of threshold that allows accepting/rejecting a person, and selection of the most relevant descriptors, to minimize both FAR and FRR errors. The final decision for identification based descriptors selected by the PSO hybrid binary give a FAR =0% and FRR=0% as results.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.1
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• pp.22-28
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• 2018

In case of developing a combined system by a number of distributed resources with storage device, a number of application suggests a huge capacity can derive operational flexibility both power supply issues or when unexpected situation imposed. However, it is important to determine a resonable energy capacity because the device have many controversial cost issues in current power system industry. An ESS application which focusing essentially required points can induce appropriate storage capacity that required in economic operation. In this paper, a curtailment supporting algorithm based on storage device is introduced, and applied in the capacity calculation method. The main algorithm pursues handling minor exceeding quantities which can cause mechanical load at blade; This paper tries to include it for configuring hybrid algorithm with pitch control. Several fluctuating conditions are utilized in simulation to reflect critical situation. The analyzing process focuses on the control feasibility with applied capacity and control method.

• Journal of Advanced Marine Engineering and Technology
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• v.23 no.2
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• pp.159-167
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• 1999

This paper presents a new transient voltage blocking device(TOBD)which low power and high frequency bandwidth to protect info-communication facilities from transient voltages. Conventional protection devices have some problems such as low frequency bandwidth low ener-gy capacity and high remnant voltage. in order to improve these limitations a hybrid type TOBD which consists of a gas tube avalanche diodes and junction type field effect transistor (JFETs) is developed. The TOBD differs from the conventional protection devices in configuration and JFETs are used as an active non-linear element and a high speed switching diode with low capacitance limited high current. Therefore the avalanche diode with low energy capacity are protected from the high current and the TOBD has a very small input capacitance. From the performance test using combination surge generator which can produce $1.2/50{\mu}m$ 4.2 kV/max, $8/20{\mu}m$ 2.1 kAmax it is confirmed that the proposed TOBD has an excellent protection per-formance in tight clamping voltage and limiting current characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.299-299
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• 2013

Indium Tin Oxide (ITO) has widely been used as a transparent conductive oxide (TCE) for photovoltaic devices. Lately, flexibility of ITO becomes an issue as demand of flexible device increases. Several scientists have tried to substitute ITO to different materials such as conductive polymer, graphene, CNT, and metal nanowire because of ITO brittleness. Among the substitute materials, PEDOT:PSS has mostly paid attention because PEDOT:PSS has excellent flexibility and good conductivity. The conductivity of PEDOT:PSS increases up to 1000 S/cm with additives such as DMSO, EG, sorbitol, and so on. In our research group, we introduce a conductive polymer PEDOT:PSS as a buffer layer to improve not only flexibility but also conductivity. As PEDOT:PSS layer forms beneath ITO thin film (20 nm), sheet resistance decreases from $230{\Omega}$/${\Box}$ to $85{\Omega}$/${\Box}$ and crack initiation decreases from 4.5 mm to 3.5 mm as well. We have fabricated organic photovoltaic device and power conversion efficiencies using conventional ITO electrode and ITO/PEDOT:PSS hybrid electrode. The photovoltaic property such as power conversion efficiency for ITO/PEDOT:PSS hybrid electrode is comparable to the value obtained using conventional ITO electrode on glass substrate.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.9B
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• pp.1305-1313
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• 2010

Last few years, wireless personal area network (WPAN) has been widely researched for various healthcare applications. Due to restriction of device hardware (e.g., energy and memory), we need to design a highly-versatile MAC layer protocol for WBAN (Wireless Body Area Network). In addition, when an emergency occurs to a patient, a priority mechanism is necessitated for a urgent message to get through to the final destination. This paper presents a priority mechanism referred to as hybrid priority MAC for WBAN. Through extensive simulation, we show the proposed MAC protocol can minimize the average packet latency for urgent data. Thus, when patients have an emergency situation, our MAC allows adequate assistance time and medical treatment for patients. The simulation based on NS-2 shows that our Hybrid Priority MAC has the good performance and usability.

• Journal of IKEEE
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• v.25 no.4
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• pp.716-720
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• 2021

In this study, we examine the availability of a cooling patch to enhance the output power of a hybrid energy device (HED) comprising a photovoltaic cell (PVC) and a thermoelectric generator (TEG). The cooling patch attached on the back of the TEG drops the temperature of the PVC via the TEG and makes a large thermal gradient across the TEG under irradiances in a range of 200 to 1000 W/m². The cooling patch is more effective for the output power of the HED as the irradiance increases, and it enhances the maximum output power of the HED to 42.1 mW at an irradiance of 1000 W/m². The increment in the maximum output power reaches 27% owing to the attachment of the cooling patch that does not consume any power.