• Journal of Ecology and Environment
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• 제36권3호
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• pp.193-204
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• 2013

Altitudinal patterns of plant species richness and the effects of area, the mid-domain effect, climatic variables, net primary productivity and latitude on observed richness patterns along the ridge of the Baekdudaegan Mountains, South Korea were studied. Data were collected from 1,100 plots along a 200 to 1,900 m altitudinal gradient on the ridge. A total of 802 plant species from 97 families and 342 genera were recorded. Common and rare species accounted for 91% and 9%, respectively, of the total plant species. The altitudinal patterns of species richness for total, common and rare plants showed distinctly hump-shaped patterns, although the absolute altitudes of the richness peaks varied somewhat among plant groups. The mid-domain effect was the most powerful explanatory variable for total and common species richness, whereas climatic variables were better predictors for rare plant richness. No effect of latitude on species richness was observed. Our study suggests that the mid-domain effect is a better predictor for wide-ranging species such as common species, whereas climatic variables are more important factors for range-restricted species such as rare species. The mechanisms underlying these richness patterns may reflect fundamental differences in the biology and ecology of different plant groups.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2014년도 추계학술대회
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• pp.769-772
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• 2014

비정질 InGaZnO 박막트랜지스터의 Gate Overlap 길이에 따른 NBS(Negative Bias Stress) 및 hot carrier 스트레스 후 시간별 문턱전압의 변화에 의한 소자신뢰도를 분석하였다. 측정에 사용된 소자는 비정질 InGaZnO TFT이며 채널 폭 $W=104{\mu}m$, 게이트 길이 $L=10{\mu}m$이며 Gate Overlap 길이는 $0,1,2,3{\mu}m$를 사용하였다. 소자 신뢰도는 전류-전압을 측정하여 분석하였다. 측정 결과, hot carrier 스트레스 후 Gate Overlap 길이가 증가할수록 문턱전압의 변화가 증가하였다. 또한, NBS 후에는 Gate Overlap 길이가 증가할수록 문턱전압의 변화가 감소하였고 장시간 스트레스 후에 hump가 발생하였다.

• 한국초전도ㆍ저온공학회논문지
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• 제23권2호
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• pp.10-13
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• 2021

Superconductor-ferromagnet thin film heterostructure is an ideal system for studying the interplay between superconductivity and ferromagnetism. These two antagonistic properties combined in thin film heterostructure create interesting proximity effects such as spin-triplet superconductivity. Thin film heterostructure of optimally doped La_2-xSr_xCuO₄(LSCO) cuprate superconductor and SrRuO₃(SRO) ruthenate ferromagnet has been grown by pulsed laser deposition. Its temperature-dependent resistivity and Hall effect measurements show that our LSCO/SRO heterostructure has both superconductivity and ferromagnetism. In the Hall effect measurement results, we find additional hump-like structures appear in the anomalous Hall effect signal in the vicinity of superconducting transition. We conclude that giant magnetoresistance of the LSCO layer distorts the AHE signal, which results in a hump-like structure.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.711-714
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• 2003

In this presentation, we investigated the abnormal subthreshold slope of the FD SOI MOSFETs upon the rapid thermal annealing. Based on subthreshold technique and C-V measurement, we deduced that the hump of the subthreshold slope comes from the abnormal D$_{it}$ distribution after RTA. The local kink in the interface trap density distribution by RTA drastically degrades the subthreshold characteristics and mini hump can be eliminated by S-PGA.A.

• 전기학회논문지
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• 제57권2호
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• pp.261-267
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• 2008

One of the most important issues in fence-type PDP is low luminance and luminous efficiency. To improve luminance and luminous efficiency, new sustain electrode structure which contains long discharge gap is necessary. However, it causes rise of firing voltage. In this paper, a new fence electrode structure is proposed in order to solve these problems. To drop the firing voltage, tow hump shaped electrodes is added on the main discharge electrode, and distance between two humps is controlled. The experimental results show that the test panel with the narrow horizontal gap(40um) between two humps shows low firing voltage by 17V compared with 80um gap in spit of similar luminance and luminous efficiency.

• 한국정보통신학회논문지
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• 제21권5호
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• pp.876-884
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• 2017

TCAD 시뮬레이션을 이용하여 소스 영역으로 오버랩된(Overlapped) 게이트를 가진 실리콘(Si), 게르마늄(Ge)과 실리콘-게르마늄(Si-Ge) Hetero 터널 전계효과 트랜지스터(Tunnel Field-Effect Transistor; TFET)의 터널링 전류 특성을 분석하였다. $SiO_2$를 산화막으로 사용한 Si-TFET의 경우에 포인트와 라인 터널링이 모두 나타나서 험프(Hump) 현상이 나타난다. Ge-TFET는 구동전류가 Si-TFET보다 높으나 누설전류가 높고 포인트 터널링이 지배적으로 나타난다. Hetero-TFET의 경우에 구동전류가 높게 나타나고 누설전류는 나타나지 않았으나 포인트 터널링이 지배적으로 나타난다. $HfO_2$를 산화막으로 사용한 Si-TFET의 경우에 라인 터널링의 문턱전압(threshold voltage)이 감소하여 라인 터널링만 나타난다. Ge과 Hetero-TFET의 경우에 포인트 터널링의 문턱전압이 감소하여 포인트 터널링에 의해 동작되며 Ge-TFET는 누설전류가 증가하였고, Hetero-TFET에서 Hump가 나타난다.

• 한국자기학회지
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• 제11권5호
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• pp.226-231
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• 2001

Mn-Zn 페라이트 단결정과 ZnO가 6 mol% 첨가된 SiO$_2$-PbO 다성분계 유리를 700, 800, 900, 1000 $^{\circ}C$에서 열처리시킨 후 계면반응과 자기적 특성 변화를 분석하였다. 계면반응분석 결과, 계면에 2차상은 생성되지 않았으며, 계면의 페라이트 부위에 Zn 농도가 증가하였으며 반대로 Mn 농도는 감소하였다. 열처리 온도가 증가함에 따라 접합시편의 초기 투자율 값이 떨어져, 주파수 100 KHz 에서의 700 $^{\circ}C$ 열처리 시편의 초기투자율은 1766이었으나 1000 $^{\circ}C$에서는 907로 감소하였다. 이러한 초기투자율의 감소는, 계면반응 시 페라이트의 용해 및 성분 원소들의 확산으로 인한 자성 소실부위 발생 및 계면의 페라이트 부위에 생성된 Zn농도 증가 층과의 열팽창계수 타이에 의한 잔류응력 발생에 의한 것으로 판단되었다.

• 대한기계학회논문집B
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• 제33권12호
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• pp.961-967
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• 2009

A 3-dimensional numerical investigation of a WIG effect vehicle with DUP (direct underside pressurization) is performed to predict aerodynamic characteristics and the static height stability. DUP can considerably reduce take-off speed and minimize the hump drag while the vehicle accelerates on the water to take off. The DUP of the model vehicle, Aircat, consists of a propeller in the middle of the fuselage and an air chamber under the fuselage. The air accelerated by the propeller comes into the camber through the channel in the middle of fuselage and augments lift by changing its dynamic pressure to static pressure dramatically. However, the air accelerated by a propeller produces excessive drag and reduces static height stability.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2016년도 추계학술대회
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• pp.616-618
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• 2016

TCAD 시뮬레이션을 이용하여 터널링 전계효과 트랜지스터(Tunnel Field-Effect Transistor; TFET) 구조에 따른 특성을 조사하였다. Single-Gate TFET, Double-Gate TFET, Pocket TFET, L-shaped TFET 구조 중에서 Pocket TFET와 L-shaped TFET이 on-current와 subthreshold swing에서 가장 좋은 성능을 보였다. 본 논문은 터널링 전계효과 트랜지스터의 새로운 구조에 대한 가이드라인을 제시하고자 한다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.701-704
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• 2003

Scoliosis is a complex musculoskeletal dieses requiring 3-D treatment with surgical instrumentation. Conventional corrective surgery for scoliosis was done based on empirical knowledge without information of the optimum position and operative procedure. Frequently, post operative change of rib hump increase and shoulder level imbalance caused serious problems in the view of cosmetics. To investigate the effect of correction surgery, a reconstructed 3-D finite element model for King-Moe type V was developed. Vertebrae, clavicle and other bony element were represented using rigid bodies. Kinematic joints and nonlinear bar elements used to represent the intervertebral disc and ligaments according to reported experimental data. With this model, optimization technique was also applied in order to define the optimal magnitudes of correction. The optimization procedure corrected the scoliotic deformities by reducing the objective function by more than 94%. with an associated reduction of the scoliotic descriptors mainly on the frontal thoracic curve.