• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.402-405
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• 1999

The Study of this paper is to establish the optimum fabricating condition of specimens using Vapor Deposition Polymerization Method which belongs to a mode of preparation of functional organic thin films with dry process and to develop thin film type humidity sensor which has good humidity sensitive Characteristics. Scanning electron microscopy Atomic force microscopy were used to analyze the characteristics of thin film and the basic structure of the humidity sensor is a parallel capacitor which consists of three layers of Al/PI/Al. The characteristics of fabricated samples were measured under various conditions and obtained linear characteristics in the range of 20∼80%RH independent of temperature change and low hysteresis characteristics.

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.605-615
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• 1996

In this paper, the effect of alkaline oxide addition such as Li$_{2}$O and Na$_{2}$O on the microstructure and humidity sensitivity of V$_{2}$O$_{5}$(2 mol%)-doped TiO$_{2}$(98 mol%) was investigated as a function of amount (0, 1, 2, 5, 10 mol%) of Li$_{2}$O and Na$_{2}$O additives. The pores in the alkaline free sample were distributed mostly in the range between 0.16 and 1.0.mu.m in diameter and its porosity was 23.29%. Li$_{2}$O caused grain overgrowth and reduced the porosity with a narrow distribution of the pore size, leading to poor humidity sensitivity. Na$_{2}$O helped to enlarge the distribution of the pore size through the formation of small soluble phases. The pore sizes of the sample containing Na$_{2}$O 2mol% were distributed mostly in the range between 1.0 and 2.5.mu.m in diameter and its porosity and intrusion volume of mercury were 31.13 % and 0.1155 mL/g respectively, which consequently improved the humidity sensing characteristics such as the sensitivity and temperature-stability. Especially, the addition of 2mol% of Na$_{2}$O improved the humidity-sensing characteristics such as sensitivity and linearity in the whole range between 30 and 90 %RH (Percentage Relative Humidity)y)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.247-248
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• 2006

Carbon nitride films were evaluated that they had many advantages for miniature micro-humidity-sensors using the standard CMOS technology humidity sensing properties and CV characteristics of the carbon nitride films have been investigated for fabricating one chip HUSFET(Humidity Sensitive Field Effect Transistor) humidity sensors Carbon nitride films were deposited on silicon substrate with meshed electrodes by reactive RF magnetron sputtering system. The capacitor-type humidity sensor revealed good humidity-impedance characteristics with a wide range of relative humidity changes, decreasing $254k{\Omega}$ to $16k{\Omega}$ according to increase of relative humidity between 5% ~ 95% and the films were very stable on the Si wafer. These results reveal that $CN_x$ thin films can be used for Si based or HUSFET structure one chip micro-humidity sensors.

• Journal of Sensor Science and Technology
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• v.33 no.5
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• pp.237-241
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• 2024

ZnWO₄-WO₃ hetero-composite microspheres were prepared by ultrasonic spray pyrolysis of a solution containing Zn and W cations, followed by heat treatment at 600℃. The gas-sensing characteristics of 5 at% of Zn-added WO₃ (5Zn-WO₃; ZnWO₄-WO₃ hetero-composite) microspheres to 1 ppm acetone, ethanol, 20 ppm hydrogen (H₂), 5 ppm carbon monoxide (CO), 25 ppb toluene, and 5 ppm ammonia (NH₃) were measured at 325-400℃ under 80% relative humidity (RH). The sensor using 5Zn-WO₃ microspheres exhibited highly selective and sensitive gas-sensing properties to acetone at 375℃ even under high humidity conditions. These superior gas-sensing properties were attributed to the increased resistance (electronic sensitization) through n-n heterojunction formation between WO₃ and ZnWO₄ phases and the acidic property of WO₃, which exhibited a low gas response to interfering ethanol gas. The superior acetone gas-sensing characteristics of the 5Zn-WO₃ sensor can be utilized in breath acetone analyzers for rapid, real-time ketogenic diet monitoring.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1311-1313
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• 1997

We describe the working principle, the design, and the characteristics of two-chip integrated humidity sensor. The sensing element was manufactured using polyimide. The interface circuits were developed based on a charge redistribution between capacitors. The sensor and signal conditioning chips were packaged together in the same package. The sensor showed excellent linearity over a wide range of relative humidity.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.1
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• pp.49-57
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• 2004

The modified polyionene polyelectrolyte inks were newly prepared and applied to the humidity-sensitive membrane of humidity sensor. The films were fabricated on the alumina substrate with comb-type gold electrode using a ink-jet printing technique. The copolymers of methyl methacrylate, acrylic acid, 2-hydroxyethyl methacrylate and [(2-methacryloyloxy)ethyl]trimethylammonium chloride were also prepared for the humidity-sensing material. which was fabricated by dip-coating method. Electrical measurements under various relative humidity were performed. The humidity-sensitive characteristics of sensors obtained by ink-jet printing technique were compared with that of dip-coating method. Humidity sensors showed a decrease in resistance as an increase of relative humidity and their resistance characteristics are in a close agreement each other.

• Journal of Mechanical Science and Technology
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• v.20 no.4
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• pp.505-512
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• 2006

This paper presents an integrated multifunctional sensor based on MEMS technology, which can be used or embedded in mobile devices for environmental monitoring. An absolute pressure sensor, a temperature sensor and a humidity sensor are integrated in one silicon chip of which the size is $5mm\times5mm$. The pressure sensor uses a bulk-micromachined diaphragm structure with the piezoresistors. For temperature sensing, a silicon temperature sensor based on the spreading-resistance principle is designed and fabricated. The humidity sensor is a capacitive humidity sensor which has the polyimide film and interdigitated capacitance electrodes. The different piezoresistive orientation is used for the pressure and temperature sensor to avoid the interference between sensors. Each sensor shows good sensor characteristics except for the humidity sensor. However, the linearity and hysteresis of the humidity sensor can be improved by selecting the proper polymer materials and structures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.521-525
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• 2004

Crystalline carbon nitride films were attempted for an application of humidity sensors. The films were deposited on $Al_2$O$_3$substrate having intermigrated electrodes by reactive rf magnetron sputtering system. The film revealed a good humidity-resistance characteristics as well as humidity-capacitance ones in the humidity range of 10∼95 RH(%). Temperature dependence was also investigated. These results suggest that the carbon nitride film has a possibility for new humidity-sensitive material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.88-91
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• 2003

Crystalline carbon nitride films have been attempted for an application of humidity sensors. The films were deposited on $Al_2O_3$ substrate having interdigitated electrodes by reactive RF magnetron sputtering system. The film revealed a good humidity-resistance characteristics as well as humidity-capacitance ones in the humidity range of $10\;{\sim}\;95\;RH(%)$. Temperature dependence was also investigated. These results suggest that carbon nitride film have a possibility for a new humidity-sensitive materials.

• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.97-103
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• 2007

Crystallized carbon nitride film that has many stable physical and/or chemical properties has been expected potentially by a new electrical material. However, one of the most significant problems degrading the quality of carbon nitride films is an existence of N-H and C-H bonds from the deposition environment. The possibility of these reactions with hydroxyl group in carbon nitride films, caused by a hydrogen attack, was suggested and proved in our previous reports that this undesired effect could be applied for fabricating micro-humidity sensors. In this study, MIS capacitor and MIM capacitor with $5{\mu}m{\times}5{\mu}m$ meshes were fabricated. As an insulator, carbon nitride film was deposited on a $Si_{3}N_{4}/SiO_{2}/Si$ substrate using reactive magnetron sputtering system, and its dielectric constant, C-V characteristics and humidity sensing properties were investigated. The fabricated humidity sensors showed a linearity in the humidity range of 0 %RH to 80 %RH. These results reveal that MIS and MIM $CN_{X}$ capacitive humidity sensors can be used for Si based micro-humidity sensors.