• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.7-10
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• 2011

High voltage (HV) integrated circuits are viable alternatives to discrete circuits in a wide variety of applications. A HV device generally used in these circuits is a lateral double diffused metal oxide semiconductor (LDMOS) transistor. Attempts to model LDMOS devices are complicated by the existence of the lightly doped drain and by the extension of the poly-silicon and the gate oxide. Several physically based investigations of the bias-dependent drift resistance of HV devices have been conducted, but a complete physical model has not been reported. We propose a new technique to model HV devices using both the BSIM3 SPICE model and a bias dependent resistor model (sub-circuit macro model).

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.202-205
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• 2010

In this study, the etch properties of $Al_2O_3$ thin films deposited by atomic layer deposition were investigated as a function of the $O_2$ content in $BCl_3$/Ar inductively coupled plasma. The experiments were performed by comparing the etch rates and selectivity of $Al_2O_3$ over the hard mask materials as functions of the input plasma parameters, such as the gas mixing ratio, DC-bias voltage, ratio-frequency (RF) power and process pressure. The highest obtained etch rate was 477 nm/min at an RF power of 700 W, $O_2$ to $BCl_3$/Ar gas ratio of 15%, DC-bias voltage of -100 V and process pressure of 15 mTorr. The deposition occurred on the surfaces when the amount of $O_2$ added to the $BCl_3$/Ar gas was too high at a low DC-bias voltage or high process pressure. X-ray photoelectron spectroscopy was used to investigate the chemical reactions on the etched surface.

• Journal of the Korean institute of surface engineering
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• v.31 no.3
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• pp.133-141
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• 1998

Stainless is widely used for various purposes due to its good corrosion resistance. There has been much research to produce the color stainless steel by several methods. In this experiment, TixN films have been deposited on the SUS304 substrate by the DC magnetron sputtering system and the color and texture of the films as a function of coating conditions has been studies. The TixN films showed a (111) preferred orintation in bias-free conditions. The texture of coated later was changed from (111) to (200) to (2200 with a change of the bias from -1000V to -3000V. When the bias is low, coated elements have low energy. Therefore, the texturct (111) of low surface energy. The mobility of atoms was increased with the increase of the blas and texture was changed to the other plane. Non-etched specimens all exhibited strong (111) texture. This result shows that (111) is a loose plane and of non-etched specimens all exhibited. High growing velocity of (111) of especially was main texture of Non-etched specimens. Low working pressure($4\times10^{-3}$torr) was more effective than figh working pressure ($6\times10^{-3}$torr) for the gold color of $Ti_xN$ film. L and b were increased and a was decreased with the increase of bias voltage. Accordingly, We obtained the near gold color of $Ti_xN$ film(L;92, a;1~1.5 b:24~29.50. As a result of reflectance. And as the bias increased, the reflectance was proportional to the increasing bias voltage, but we took the top reflectance when the bias voltage was -200V.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.6
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• pp.593-596
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• 2015

In this paper, we design a high efficiency class E power amplifier operating at low drain bias voltage for wireless power transfers. A 13.56 MHz power amplifier is designed at drain bias voltage of 12.5 V using Si MOSFET with the breakdown voltage of 40 V. High quality-factor solenoidal inductor is designed and fabricated for use in output matching circuit to improve output power and efficiency. Input matching circuit simply consists of resistor and inductor to reduce the circuit area and improve the stability. The fabricated power amplifier shows the measured output power of 38.6 dBm with the gain of 16.6 dB and power added efficiency of 89.3 % at 13.56 MHz.

• Journal of Information Display
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• v.3 no.4
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• pp.13-18
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• 2002

In general, the background light that is produced during the reset period deteriorates the dark room contrast ratio in AC PDP. In this paper, we propose a modified ramp reset pulse that can reduce the background light to an imperceptible level. In the new reset waveform, the discharges between the scan and sustain electrodes are minimized by applying a positive bias voltage to the sustain electrode and only the weak discharges between the scan and address electrodes are found to occur during the reset period. We also adopted the MgO coated phosphor layer to improve the address voltage margin that was reduced when the bias voltage in the modified ramp reset waveform was applied. As a result, the address voltage margin of 45 V which is the same level of the conventional method was ortained and the dark room contrast ratio was improved up to 7500 : 1.

• Journal of Power Electronics
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• v.13 no.5
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• pp.779-786
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• 2013

A highly efficient sustaining driver is proposed for plasma display panels (PDPs). When the PDP is charged and discharged, the proposed sustaining driver employs an address voltage source used in an addressing period. A voltage source is used for fully charging the panel to the sustaining voltage, and an initial inductor current helps the panel discharge to 0 V. The resonance between the panel and an inductor is made by shifting the voltage and current bias level when charging and discharging the panel. As a result, the proposed circuit can reduce power consumption, switching loss, heat dissipation, and production cost. Experimental results of a 42-inch PDP are provided to verify the operation and features of the proposed circuit.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.3
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• pp.383-390
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• 2018

Piezoelectric micro-machined ultrasonic transducers for highly directional speaker need DC bias voltage. Most existing power amplifiers are not suitable for use in highly directional transducers because they are based on AC. In addition, since the piezoelectric micro-machined ultrasonic transducer has a large capacitive reactance, the power efficiency of the power amplifier is very low. Thus this paper proposes a new high efficiency power amplifier with DC bias voltage. In addition, by designing a matching circuit to compensate the capacitive reactance of the micro-machined ultrasonic transducer, the power efficiency of the power amplifier increases. The operating characteristics of the proposed power amplifier was verified by an experimental prototype. The proposed power amplifier is expected to be widely used in designing and implementing other related power amplifiers.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.154-154
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• 2013

In this work, we investigated the characteristics and the effects of light on the negative gate bias stress stability (NBS) in high mobility polycrystalline IGO TFTs. IGO TFT showed a high drain current on/off ratio of ${\sim}10^9$, a field-effect mobility of $114cm^2/Vs$, a threshold voltage of -4V, and a subthresholdslpe(SS) of 0.28V/decade from log($I_{DS}$) vs $V_{GS}$. IGO TFTs showed large negative $V_{TH}$ shift(17V) at light power of $5mW/cm^2$ with negative gate bias stress of -10V for 10000seconds, at a fixed drain voltage ($V_{DS}$) of 0.5V.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.879-880
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• 2008

At the high speed operation, the boost negative bias can reduce the negative torque and increase the dwell angle, so the output power and efficiency can be improved. In this paper, a novel power converter for single phase SRM with boost negative bias is proposed. A simple passive capacitor circuit is added in the front-end, which consists of three diodes and one capacitor. Based on this passive capacitor network, the two capacitors can be connected in series and parallel in different condition. In proposed converter, the phase winding of SRM obtains general dc-link voltage in excitation mode and the double dc-link voltage in demagnetization mode. The operation modes of the proposed converter are analyzed in detail. Some computer simulation and experimental results are done to verify the performance of proposed converter.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.3
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• pp.569-577
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• 1999

A wideband RF receiver for satellite mobile communications system was fabricated and evaluated of performance in low noise amplifier and high gain amplifier. The low noise amplifier used to the resistive decoupling and self-bias circuits. The low noise amplifier is fabricated with both the RF circuits and the self-bias circuits. Using a INA-03184, the high gain amplifier consists of matched amplifier type. The active bias circuitry can be used to provide temperature stability without requiring the large voltage drop or relatively high-dissipated power needed with a bias stabilized resistor. The bandpass filter was used to reduce a spurious level. As a result, the characteristics of the receiver implemented here show more than 55 dB in gain, 50.83 dBc in a spurious level and less than 1.8 : 1 in input and output voltage standing wave ratio(VSWR), especially the carrier to noise ratio is a 43.15 dB/Hz at a 1 KHz from 1537.5 MHz.