• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.199-202
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• 2002

In general, the background light produced during the reset period deteriorates the dark room contrast ratio in AC PDP. In this paper, we propose a modified ramp reset pulse that can reduce the background light to imperceptible level. In the new reset waveform, the discharges between the scan and sustain electrodes are minimized by applying a positive bias voltage to the sustain electrode and only the weak discharges between the scan and address electrodes occur during the reset period. We adopted a MgO coated phosphor layer to get the same level of voltage margin in the new reset pulse scheme compared to that of the conventional ramp reset pulse one. As a result, the voltage margin is maintained at the same level and the dark room contrast ratio is improved dramatically.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.403-404
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• 2012

We fabricated TFT devices with the GeSe channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is high. Based on the experiments, we draw the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.6
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• pp.37-43
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• 1997

In this paper, an analog-domain powr-reduction technique for a low-voltage CMOS operational amplifier and its application to clock-based VLSI systems are proposed. The proposed technique cuts off the bias current of the op amp during a half cycle of the clock in the sleeping mode and resumes the curent supply sequentially during the remaining cycle of the clock in the normal operating mode. The proposed sequential sbiasing technique reduces about 50% of the op amp power and improves the circuit performance through high phase margin and stable settling behavior of the output voltage. The power-reduction technique is applied to a sample-and-hold amplifier which is one of the critical circuit blocks used in the front-end stage of analog and/or digital integrated systems. The SHA was simulated and analyzed in a 0.8.mu.m n-well double-poly double-metal CMOS technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.580-583
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• 2009

This paper introduces a gate drive IC for power modules with shoot-through immunity. A new approach uses a bootstrap diode as a high-side voltage bias and a level shift function at the same time. Therefore, the gate drive circuit becomes a simple and low-cost without conventional level shift functions such as HVIC(High-Voltage IC), optocoupler and transformer. The proposed gate drive IC is designed and fabricated using the Dongbu-Hitek's 0.35um BD350BA process. It has been tested and verified with IGBT modules.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.81-82
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• 2009

This paper introduces a gate drive IC for power modules with shoot-through immunity. A new approach uses a bootstrap diode as a high-side voltage bias and a level shift function at the same time. Therefore, the gate drive circuit becomes a simple and low-cost without conventional level shift functions such as HVIC(High-Voltage IC), optocoupler and transformer. The proposed gate drive IC is designed and fabricated using the Dongbu-Hitek's 0.35um BD350BA process. It has been tested and verified with IGBT modules.

• Journal of the Korean Ceramic Society
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• v.45 no.1
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• pp.69-74
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• 2008

The effects of $SiO_2$ impurity on the high temperature resistivities of AIN ceramics have been investigated. When $SiO_2$ was added into 1 wt% $Y_2O_3$-doped AIN, DC resistivities have decreased and electrode polarizations disappeared. Impedance spectroscopy showed two semi-circles at $600^{\circ}C$, which were attributed to grain and grain boundary, respectively. $SiO_2$ doping had more significant effects on the grain resistivity than grain boundary resistivity, implying that doped Si acted as a donor in AIN lattice. In addition, voltage dependency of DC resistivity was observed, which might be related to dependency of size of grain boundary semi-circle on the bias voltage in impedance spectroscopy.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.6
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• pp.41-50
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• 1995

A state-of-the-arts GaAs power metal semiconductor field effect transistor (MESFET) for 3.3V operation digital hand-held phone at 900 MHz has been developed for the first time, The FET was fabricated using a low-high doped structures grown by molecular beam epitaxy (MBE). The fabricated MESFETs with a gate width of 16 mm and a gate length of 0.8 .mu.m shows a saturated drain current (Idss) of 4.2A and a transconductance (Gm) of around 1700mS at a gate bias of -2.1V, corresponding to 10% Idss. The gate-to-drain breakdown voltage is measured to be 28 V. The rf characteristics of the MESFET tested at a drain bias of 3.3 V and a frequencyof 900 MHz are the output power of 32.3 dBm, the power added efficiency of 68%, and the third-ordr intercept point of 49.5 dBm. The power MESFET developed in this work is expected to be useful as a power amplifying device for digital hand-held phone because the high linear gain can deliver a high power added efficiency in the linear operation region of output power and the high third-order intercept point can reduce the third-order inter modulation.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.127-130
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• 2003

An RSFQ (Rapid Single Flux Quantum) counter can be used as a frequency divider that was an essential part of a programmable voltage standard chip. The voltage standard chip is composed of two circuit parts, a counter and an antenna Analog signal of tens to hundreds ㎓ may be applied to a finline antenna part. This analog signal can be converted to the stream of SFQ voltage pulses by a DC/SFQ circuit. The number of voltage pulses can be reduced by 2n times when they pass through a counter that is composed of n T Flip-Flops (Toggle Flip-Flop). Such a counter can be used not only as a frequency divider, but also to build a programmable voltage standard chip. So, its application range can be telecommunication, high speed RAM, microprocessor, etc. In this work, we have used Xic, WRspice, and L-meter to design an RSFQ counter. After circuit optimization, we could obtain the bias current margins of the T Flip-Flop circuit to be above 31％ Our RSFQ counter circuit designs were based on the 1 ㎄/$\textrm{cm}^2$ niobium trilayer technology.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.43-50
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• 2011

Carbon-nanotube metal oxide semiconductor field effect transistor (CN-MOSFET) is a promising future device candidate. The electrical characteristics of 16 nm N-type CN-MOSFETs are explored in this paper. The optimum N-type CN-MOSFET device profiles with different number of tubes are identified for achieving the highest on-state to off-state current ratio ($I_{on}/I_{off}$). The influence of substrate voltage on device performance is also investigated in this paper. Tradeoffs between subthreshold leakage current and overall switch quality are evaluated with different substrate bias voltages. Technology development guidelines for achieving high-speed, low-leakage, area efficient, and manufacturable carbon nanotube integrated circuits are provided.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.10
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• pp.71-78
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• 1994

We have developed GaAs power metal semiconductor field effect transistors (MESFETs) for 4.7V operation under 900 MHz using a low-high deped structures grown by molecular beam epitaxy (MBE). The fabricted MESFETs with a gate widty of 7.5 mm and a gate length of 1.0.mu.m show a saturated drain current (Idss) of 1.7A and an uniform transconductance (Gm) of around 600mS, for gate bias ranged from -2.4 V to 0.5 V. The gate-drain breakdown voltage is measured to be higher than 25 V. The measured rf characteristics of the MESFETs at a frequency of 900 MHz are the output power of 31.4 dBm and the power added efficiency of 63% at a drain bias of 4.7 V.