Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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N-Type Carbon-Nanotube MOSFET Device Profile Optimization for Very Large Scale Integration

  • Sun, Yanan (Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay) ;
  • Kursun, Volkan (Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay)
  • Published : 2011.04.25
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Abstract

Carbon-nanotube metal oxide semiconductor field effect transistor (CN-MOSFET) is a promising future device candidate. The electrical characteristics of 16 nm N-type CN-MOSFETs are explored in this paper. The optimum N-type CN-MOSFET device profiles with different number of tubes are identified for achieving the highest on-state to off-state current ratio ($I_{on}/I_{off}$). The influence of substrate voltage on device performance is also investigated in this paper. Tradeoffs between subthreshold leakage current and overall switch quality are evaluated with different substrate bias voltages. Technology development guidelines for achieving high-speed, low-leakage, area efficient, and manufacturable carbon nanotube integrated circuits are provided.

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