• Journal of Electrical Engineering and Technology
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• v.11 no.1
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• pp.125-134
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• 2016

We propose an efficient high voltage level shifter for a high side Buck converter driving a light-emitting diode (LED) lamp. The proposed circuit is comprised of a low voltage pulse width modulation (PWM) signal driver, a coupling capacitor, a resistor, and a diode. The proposed method uses a property of a PWM signal. The property is that the signal repeatedly transits between a low and high level at a certain frequency. A low voltage PWM signal is boosted to a high voltage PWM signal through a coupling capacitor using the property of the PWM signal, and the boosted high voltage PWM signal drives a p-channel metal oxide semiconductor (PMOS) transistor on the high side Buck converter. Experimental results show that the proposed level shifter boosts a low voltage (0 to 20 V) PWM signal at 125 kHz to a high voltage (370 to 380 V) PWM signal with a duty ratio of up to 0.9941.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.719-726
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• 2008

In this paper, we designed driving IC for 500 V resonant half-bridge type power converter, In this single-ended level shifter, chip area and power dissipation was decreased by 50% and 23.5% each compared to the conventional dual-ended level shifter. Also, this newly designed circuit solved the biggest problem of conventional flip-flop type level shifter in which the power MOSFET were turned on simultaneously due to the large dv/dt noise. The proposed high side level shifter included switching noise protection circuit and schmmit trigger to minimize the effect of displacement current flowing through LDMOS of level shifter when power MOSFET is operating. The designing process was proved reasonable by conducting Spectre and PSpice simulation on this circuit using 1${\mu}m$ BCD process parameter.

• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.487-488
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• 2015

New inverter motor drive systems consume 30%~50% less energy compared to existing motor drive systems. For inverter motor drive systems, the development of a 1200V high side driver is critical. This paper presents an advanced 1200V high side driver with low power consumption and high ruggedness. This solution implements a high voltage level shifter which consumes low power by adding a clamped VGS LDMOS driver to the conventional short pulse generator. Moreover, this paper proposes a highly rugged 1200V LDMOS which improves SOA by limiting the hole current. This paper could be applied to smart power modules used for HVAC (heating, ventilation, and airconditioning) and industrial inverters. Consequently, this paper will provide design engineers with an understanding of how they can make a significant contribution to worldwide energy savings.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.58-65
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• 2009

In this paper, we designed high voltage gate drive IC including dead time circuit in which capacitors controlled rising time and falling time, and schimitt-triggers controlled switching voltage. Designed High voltage gate drive IC improves an efficiency of half-bridge converter by decreasing dead time variation against temperature and has variable dead time by the capacitor value. and its power dissipation, which is generated on high side part level shifter, has decreased 52 percent by short pulse generation circuit, and UVLO circuit is designed to prevent false-operation. We simulated by using Spectre of Cadence to verify the proposed circuit and fabricated in a 1.0um process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.10
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• pp.7-14
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• 2008

In this paper, we designed the HVIC(High Voltage Gate Driver IC) which has improved noise immunity characteristics and high driving capability. Operating frequency and input voltage range of the designed HVIC is up to 500kHz and 650V, respectively. Noise protection and schmitt trigger circuit is included in the high-side level shifter of designed IC which has very high dv/dt noise immunity characteristic(up to 50V/ns). And also, rower dissipation of high-side level shifter with designed short-pulse generation circuit decreased more that 40% compare with conventional circuit. In addition, designed HVIC includes protection and UVLO circuit to prevent cross-conduction of power switch and sense power supply voltage of driving section, respectively. Protection and UVLO circuit can improve the stability of the designed HVIC. Spectre and Pspice circuit simulator were used to verify the operating characteristics of the designed HVIC.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.463-464
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• 2008

As the demands of LCD and PDP TV are increasing, the high performance HVICs(High Voltage Gate Driver ICs) technology is becoming more necessary. In this paper, we designed the HVIC that has enhanced noise immunity and high driving capability. It can operate at 500KHz switching frequency and permit 600V input voltage. High-side level shifter is designed with noise protection circuit and schmitt trigger. Therefore it has very high dv/dt immunity, the maximum being 50V/ns. The HVIC was designed using $1{\mu}m$ BCD 650V process and verified by Spectre and PSpice of Cadence inc. simulation.

• Journal of Korea Society of Industrial Information Systems
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• v.19 no.3
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• pp.25-30
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• 2014

This paper describes the design of gate driver circuits in distributed maximum power point tracking(DMPPT) controller for photovoltaic system. For the effective DMPPT control in the existence of shadowed modules, high voltage gate driver is applied to drive the DC-DC converter in each module. Some analog blocks such as 12-b ADC, PLL, and gate driver are integrated in the SoC for DMPPT. To reduce the power consumption and to avoid the high voltage damage, a short pulse generator is added in the high side level shifter. The circuit was implemented with BCDMOS 0.35um technology and can support the maximum current of 2A and the maximum voltage of 50V.