• Electrical & Electronic Materials
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• v.10 no.1
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• pp.26-32
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• 1997

The gate induced drain leakage(GIDL) current under the stress of worse case in -MOSFET's with ultrathin gate oxides has been measured and characterized. The GIDL current was shown that P-MOSFET's of the thicker gate oxide is smaller than that of the thinner gate oxide. It was the results that the this cur-rent is decreased with the increamental stress time at the same devices.It is analyzed that the formation components of GIDL current are both energy band to band tunneling at high gate-drain voltage and energy band to defect tunneling at low drain-gate voltage. The degradations of GIDL current was analyzed the mechanism of major role in the hot carriers trapping in gate oxide by on-state stress.

• Journal of Electrical Engineering and Technology
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• v.11 no.1
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• pp.100-108
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• 2016

This paper presents a simple high efficiency full-bridge DC-DC converter using a series resonant capacitor. The proposed converter achieves the zero voltage switching of the primary switches under a wide range of load conditions and reduces the high circulating current in the freewheeling mode using the leakage resonant inductance and the series resonant capacitor. Thus, the proposed converter overcomes the drawbacks of the conventional full-bridge DC-DC converter and improves its overall system efficiency. Its structure is simplified by using the leakage inductance of the transformer as the resonant inductance and omitting the DC output filter inductance. Also it can operate over a wide range of input voltages. In this paper, the operational principle, analysis and design example are described in detail. Finally, the experimental results from a 650W (24V/27A) prototype are demonstrated to confirm the operation, validity and features of the proposed converter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.27-30
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• 2002

Photoconductor for direct detection flat-panel imager present a great materials challenge, since their requirements include high X -ray absorption, ionization and charge collection, low leakage current and large area deposition. Selenium is practical material. But it needs high thickness and high voltage in selenium for high ionization rate. We report comparative studies of detector sensitivity. One is an a-Se with $70{\mu}m$ thickness on glass. The other has hybrid layer of depositting ZnS phosphor with $100{\mu}m$ on a-Se. The leakage current of hybrid is similar to it of a-Se, but photocurrent is lager than a-Se. Both of them have high spatial resolution, but hybrid has higher sensitivity than a-Se at comparable bias voltage.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.803-810
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• 1997

Ba0.5Sr0.5TiO3 thin films were deposited by RF magnetron sputliring method in order to clarify the anneal condition and doping effect on loakage current Nb and Al were selected as electron donor and acceptor dopants respectively, in the BST films because they have been known to have nearly same ionic radii as Ti and thought to substitute Ti sites to influence the charge carrier and the acceptor state adjacent to the gram boundary. BST thin films prepared in-situ at elevated temperature showed selatively high leakage current density and low breakdown voltage. In order to achieve smooth surface and to improve electrical properties, BST thin films were deposited at room temperature and annealed at elevated temperature. Post-annealed BST thin films showed smoother surface morphology and lower leakage current density than in-situ prepared thin films. The leakage current density of Al doped thin films was measured to be around 10-8A/cm2, which is much lower than those of undoped and Nb doped BST films. The result clearly demonstrates that higher Schottky barrier and lower mobile charge carrier concentration achieved by annealing in the oxygen atmosphere and by Al doping are desirable for reducing leakage current density in BST thin films.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.151-154
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• 2001

The leakage current behaviors of PLZT capacitors with top electrodes of Pt, Ir, and $IrO_2$ are investigated before and after hydrogen forming gas anneal. The P-E hysteresis and fatigue properties of Pt/PLZT/Pt capacitors are almost recovered after recovery anneal in $O_2$ ambient. The leakage current mechanisms of PLZT capacitors with Pt and $IrO_2$ top electrodes are consistent with space-charge influenced injection model showing the strong time dependence irrespective of annealing conditions. On the other hand, the leakage current behavior of Ir/PLZT/Pt capacitor shows steady state independent of time because IrPb, conducting phase, formed at interface between Ir top and PLZT is a high conduction path. Teh leakage current mechanism of Ir/PLZT/Pt capacitor is consistent with Schottky barrier model.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.4B no.2
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• pp.54-58
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• 2004

This paper presents the iron core design method of a high temperature superconducting (HTS) transformer considering voltages per turn (V/T). In this research, solenoid type HTS coils were selected for low voltage (LV) winding and double pancake coils for high voltage (HV) winding, just as in conventional large power transformers. V/T is one of the most fundamental elements used in designing transformers, as it decides the core cross sectional area and the number of primary and secondary winding turns. By controlling the V/T, the core dimension and core loss can be changed diversely. The leakage flux is another serious consideration in core design. The magnetic field perpendicular to the HTS wire causes its critical current to fall rapidly as the magnitude of the field increases slowly. Therefore in the design of iron core as well as superconducting windings, contemplation of leakage flux should be preceded. In this paper, the relationship between the V/T and core loss was observed and also, through computational calculations, the leakage magnetic fields perpendicular to the windings were found and their critical current decrement effects were considered in relation to the core design. The ％ impedance was calculated by way of the numerical method. Finally, various models were suggested.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.180-184
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• 2002

In this paper, the electrical properties of PVD Ta and $TaN_x$ gate electrodes on $SiO_2$ and their thermal stabilities are investigated. The results show that the work functions of $TaN_x$ gate electrode are modified by the amount of N, which is controlled by the flow rate of $N_2$during reactive sputtering process. The thermal stability of Ta and $TaN_x$ with RTO-grown $SiO_2$ gate dielectrics is examined by changes in equivalent oxide thickness (EOT), flat-band voltage ($V_{FB}$), and leakage current after post-metallization anneal at high temperature in $N_2$ambient. For a Ta gate electrode, the observed decrease in EOT and leakage current is due to the formation of a Ta-incorporated high-K layer during the high temperature annealing. Less change in EOT and leakage current is observed for $TaN_x$ gate electrode. It is also shown that the frequency dispersion and hysteresis of high frequency CV curves are improved significantly by a post-metallization anneal.

• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.5
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• pp.423-431
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• 2001

This paper proposes a new active common-mode voltage damper circuit that is capable of suppressing a common-mode voltage produced in the PWM VSI-fed induction motor drives. The new active common mode voltage damper is consists of a four-level half-bridge Inverter and a common mode transformer with a blocking capacitor. In order to reduce the common mode voltage and high frequency leakage current the active common mode damper applies to the PWM inverter system the compensated voltage of which the amplitude is the same as the common mode voltage and of which the polarity is opposite to the common mode voltage. Simulated using P-SPICE and experimental results show that common-mode voltage damper makes contributions to reducing a high frequency leakage current and common-mode voltage.

• Journal of IKEEE
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• v.27 no.4
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• pp.450-455
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• 2023

Among single-phase photovoltaic inverters that can avoid excessive leakage current caused by the large parasitic capacitance of photovoltaic panels, a boost converter followed by a half-bridge inverter is the simplest and has the smallest leakage current. However, due to the high DC-link voltage, the rated voltage of the switching devices is high and the switching loss is large. This paper proposes a new circuit topology which can operate as a buck-boost inverter by adding two bidirectional switches to the output side of the half-bridge inverter instead of removing the boost converter. By reducing two stages of power conversion through the high-voltage DC-link to one stage, power loss can be reduced without increasing costs and leakage current. The feasibility of the proposed circuit topology is verified by computer simulation and power loss calculation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.886-889
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• 2001

Silicone rubber is being used for the housing material of outdoor high voltage insulators such as composite insulator, bushing, surge arrestor and cable terminator because of good tracking and erosion resistance, good hydrophobicity and recovery of hydrophobicity and chemical stability. But, the leakge current occurs on surface of the composite polymeric insulation materials when the insulator is used for a long time with severe contaminative condition and it can lead the contamination flashover. So the leakage current is important to estimate the condition of the silicone rubber surface. In this paper, aging characteristics of silicone rubber used for outdoor insulation have been hydrophobicity of silicone rubber in salt fog chamber with average leakage current monitoring for observing the transformation of surface degradation properties of silicone rubber with different ATH(alumina trihydrate, A1$_2$O$_3$$.$3H$_2$O) filler contents. The experimental results show that a higher peak leakage current and to raise a long time for tracking with increasing amount of ATH by the salt fog and heat recycle ageing.