• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.10
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• pp.1408-1412
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• 2013

High power pulse generating technology is to accumulate the energy for relatively long and then to create a strong force by emitting the energy very fast. High power pulse generating technology has recently been using in various fields like environments, industry, research, military and so on. Numerous studies about high power pulse generators have already been performed and commercialized in various conditions. However, in aspect of their size and weight, it is hard to carry the generators which currently have been developed. For these reasons, din nations like America or Russia, the researches have been performed for Ferroelectric Generators(FEG), which have relatively simple structure and are economical. To realize the ferroelectric generator, in this study, we selected the PZTs which have different physical properties respectively, and then shocked them using explosives. The PZT samples with volumes of $0.31{\sim}0.94cm^3$ were depolarized by shocked and produced the waveform that have peak voltages of 4.28 ~ 15kV. The lowest relative permittivity sample generated much higher peak voltage. And sudden voltage drops which seem to be caused by dielectric breakdown were observed in some experiments using low young's modulus samples. Also, increase in thickness led to increase in peak voltage, but the ratio of the voltage rise did not reach the ration of the thickness increase.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.04a
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• pp.35-43
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• 2001

Flip chip assembly on organic substrates using ACAs have received much attentions due to many advantages such as easier processing, good electrical performance, lower cost, and low temperature processing compatible with organic substrates. ACAs are generally composed of epoxy polymer resin and small amount of conductive fillers (less than 10 wt.%). As a result, ACAs have almost the same CTE values as an epoxy material itself which are higher than conventional underfill materials which contains lots of fillers. Therefore, it is necessary to lower the CTE value of ACAs to obtain more reliable flip chip assembly on organic substrates using ACAs. To modify the ACA composite materials with some amount of conductive fillers, non-conductive fillers were incorporated into ACAs. In this paper, we investigated the effect of fillers on the thermo-mechanical properties of modified ACA composite materials and the reliability of flip chip assembly on organic substrates using modified ACA composite materials. Contact resistance changes were measured during reliability tests such as thermal cycling, high humidity and temperature, and high temperature at dry condition. It was observed that reliability results were significantly affected by CTEs of ACA materials especially at the thermal cycling test. Results showed that flip chip assembly using modified ACA composites with lower CTEs and higher modulus by loading non-conducting fillers exhibited better contact resistance behavior than conventional ACAs without non-conducting fillers. Microwave model and high-frequency measurement of the ACF flip-chip interconnection was investigated using a microwave network analysis. ACF flip chip interconnection has only below 0.1nH, and very stable up to 13 GHz. Over the 13 GHz, there was significant loss because of epoxy capacitance of ACF. However, the addition of $SiO_2filler$ to the ACF lowered the dielectric constant of the ACF materials resulting in an increase of resonance frequency up to 15 GHz. Our results indicate that the electrical performance of ACF combined with electroless Wi/Au bump interconnection is comparable to that of solder joint.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.4
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• pp.87-95
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• 1999

A primary limitation of the awlication of New class of solid state high power, high speed electronic device, narrely, the Photo-Conductive Power Switch(PCPS) is that the switches flashover at the surlace under average awlied fields much less than the bulk breakdown field of the semiconductor in most cases. The only way overcome those problffi1 and has a workable compact solid state switch is to passivate the surlace by a solid state dielectric material. In this experirrentation, The voltage withstands of Silicon is to be severely degraded when operated in vacuum(10[kV/cm]) and the perlormance is improved when operated in air(30[kV/cm[), in SF6(80~100[kV/cm]). After the passivation, the device had a breakdown field in vacuum and air at a field as high as the unpassivated device in SF6. A experirrent results show passivated devices have excellent breakdown field. In this paper, We improved the main properties and mechanism of the silicon breakdown before and after passivation under high field. field.

• Electronic Materials Letters
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• v.14 no.6
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• pp.669-677
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• 2018

In this work, the high ${\kappa}$ $Zr_xAl_{1-x}O_y$ films with a different Zr concentration have been deposited by atomic layer deposition, and the effect of Zr concentrations on the structure, chemical composition, surface morphology and dielectric properties of $Zr_xAl_{1-x}O_y$ films is analyzed by Atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and capacitance-frequency measurement. The effect of Zr concentrations of $Zr_xAl_{1-x}O_y$ gate insulator on the electrical property and stability under negative bias illumination stress (NBIS) or temperature stress (TS) of ZnSnO (ZTO) TFTs is firstly investigated. Under NBIS and TS, the much better stability of ZTO TFTs with $Zr_xAl_{1-x}O_y$ film as a gate insulator is due to the suppression of oxygen vacancy in ZTO channel layer and the decreased trap states originating from the Zr atom permeation at the $ZTO/Zr_xAl_{1-x}O_y$ interface. It provides a new strategy to fabricate the low consumption and high stability ZTO TFTs for application.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.47-52
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• 2008

This investigation was performed in order to study the properties of deposition and layers by Silicon Dioxide, SiO2, as dielectric onto Via and Trench which have high Aspect Ratio (AR). Thus, in order to confirm these properties, three types of CVD, which were PECVD, PETEOS, and ALD, were selected. On the experiment each of the property sections was estimated that step overage of PECVD: <30%, PETEOS: 45%, ALD: 75% and the RSM of PECVD: 27.8 nm, PETEOS: 2.1 nm, ALD: <2.0 nm. As a result of this experiment for the property of electric film, ALD was valuated to be the most favorable outcome. However, ALD was valuated to have the least quality for the deposition rate. ALD deposition rate, $10\;\AA/min$ by $1\;\AA$/1cycle, was prominently lower than PETEOS, which had the deposition rate of $5000\;\AA$/min. Since electric film requires at least $1000\;\AA$ thicknesses, ALD was not suitable for the deposition rate. which is the most important component in a practical use. Therefore, in this particular study, PETEOS was evaluated to be the most suitable recipe.

• Journal of the Korean Society for Nondestructive Testing
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• v.28 no.1
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• pp.16-24
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• 2008

Near-field scanning microwave microscope (NSMM) has been used to characterize the electromagnetic properties of samples based on a cavity perturbation technique. We used a NSMM using a waveguide cavity to couple a metallic probe tip as a point like evanescent field emitter. We explained the quality of our NSMM system by applying the cavity perturbation theory. First, to make a shape perturbation, we inserted linear and loop probes in the waveguide resonator. To check up electric and magnetic field distribution inside the waveguide resonator by shape perturbation, we confirmed the field distribution by using a HFSS simulation. Second, to make material perturbation, we located a dielectric sample in front of the probe tip and measured reflection coefficient $(S_{11})$. We found that the resonance frequency$(f_r)$ was changed linearly as the dielectric constant of resonator$({\varepsilon}_r)$ increased when ${\Delta}{\varepsilon}\;and\;{\Delta}{\mu}$ were small.

• Journal of Energy Engineering
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• v.25 no.3
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• pp.18-26
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• 2016

Mineral oil is the most widely used for electrical transformer, though some factors should be considered such as their environmentally harmfulness when it spill and low flash point. To cover these disadvantages, vegetable oil has developed because of its high biodegradability and thermal stability. However, it is necessary that many studies should conduct to reveal the detailed impacts of long-term operation as transformer oil. In this paper, we applied the accelerated aging test which simulate the real transformer circumstances using insulation paper, coil, steel at $150^{\circ}C$, which is higher than normal operation, for 2 weeks. To figure out the oxidation characteristics between mineral oil and vegetable oil test major properties and components such as total acid number, dielectric breakdown and dissolved gas components during that period. As a result of these tests, we found that vegetable oil has higher electric insulation ability than mineral oil though poor total acid number by hydrophile property. Vegetable oil also kept its thermal stability under the given circumstances.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.24-31
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• 2022

This study investigated microstructures, crystal structures, polarization, dielectric and electromechanical properties of 0.76Bi_1/2Na_1/2TiO₃-0.24SrTiO₃ (BNT-24ST)-based piezoceramcs by adding Li₂CO₃ and B₂O₃ (LB) as sintering aids for low-temperature sintering. All samples were successfully synthesized using conventional solid-state reaction method and sintered at 950, 1,000, 1,050, 1,100 and 1,175℃ for 2 hours. Without LB, specimens required sintering temperatures over 1,175℃ for sufficient densification, while the addition of 0.10-mol LB decreased the sintering temperatures down to 950℃. The average grain size and dielectric properties of BNT-24ST-10LB ceramics were enhanced with increasing sintering temperature. We found that the low-temperature sintered BNT-24ST piezoceramics by adding LB showed the d₃₃*value of 402 pm/V at 4 kV/mm after sintering at 1,050℃, which was better than that of high-temperature fired specimens sintered at 1,175℃ without LB (242 pm/V). We believe that the results of this study promise a candidate for low-cost multilayer ceramic actuator applications.

• Electrical & Electronic Materials
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• v.10 no.5
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• pp.473-480
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• 1997

Surface passivation using glass powders results in good reliability for high voltage silicon power devices. In this paper Zinc borosilicate glass and Lead borosilicate glass were prepared for the purpose of passivating, and a deposition technique of glass films on the silicon surface by electrophoresis in which acetone is used as a suspension medium has been investigated. Their physical properties were compared using DTA, SEM, XRD, as a function of firing temperature, I can get the fine films of 22${\mu}{\textrm}{m}$ thickness with Lead borosilicate glass under 300 volts applied, 3 minutes and $700^{\circ}C$ firing temperature. Also I can get the fine films of 17${\mu}{\textrm}{m}$ thickness with Zinc borosilicate glass under same conditions. As a result of investigation of glass films from which glass layer was removed by placing it in HCl, it has been found that pre-firing and annealing play an important role to achieve uniform and fine glass deposition films. And also it was found that relative dielectric constant is independence of frequency.

• The Korean Journal of Ceramics
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• v.1 no.1
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• pp.7-12
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• 1995

When a $Ta_O_5$ dielectric film is deposited on a bare silicon, the growth of $SiO_2$ at the $Ta_O_5$/Si interface cannot be avoided. Even though the $SiO_2$ layer is ultrathin (a few nm), it has great effects on the electrical properties of the capacitor. The concentration depth profiles of the ultrathin interfacial $SiO_2$ and $SiO_2/Si_3N_4$ layers were obtained using an Auger electron spectroscopy (AES) equipped with a cylindrical mirror analyzer (CMA). These AES depth profiles were quantitatively analyzed by comparing with the theoretical depth profiles which were obtained by considering the inelastic mean free path of Auger electrons and the angular acceptance function of CMA. The direct measurement of the interfacial layer thicknesses by using a high resolution cross-sectional TEM confirmed the accuracy of the AES depth analysis. The $SiO_2/Si_3N_4$ double layers, which were not distinguishable from each other under the TEM observation, could be effectively analyzed by the AES depth profiling technique.