• Journal of the Korean Ceramic Society
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• v.41 no.5
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• pp.364-369
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• 2004

The barrier and optical properties of AlO$_{x}$ thin films on polycarbonate deposited by Reactive Ion Beam Sputtering (RIBS) were investigated at different oxygen partial pressure. We measured the deposition rate of AlO$_{x}$ thin films. As the oxygen partial pres-sure increased, the deposition rate increased then decreased. The changes of deposition rate are associated with the properties of deposited films. The properties of deposited AlO$_{x}$ thin films were studied using X-ray Photoelectron Spectroscopy (XPS), Scan-ning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM). Optimum deposition parameters were found for fabricat-ing aluminum oxide thin films with high optical transparency for visible light and low Oxygen Transmission Rate (OTR). The optical transmittance of AlO$_{x}$ thin film deposited on polycarbonate (PC) showed the same value of bare PC.bare PC.

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.57-62
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• 2005

Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using lEE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.

• Journal of the Korean institute of surface engineering
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• v.47 no.3
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• pp.109-115
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• 2014

High power impulse magnetron sputtering (HIPIMS), also known as the technology is called peak power density in a short period, you can get high, so high ionization sputtering rate can make. Higher ionization of sputtered species to a variety of coating materials conventional in the field of improving the characteristics and self-assisted ion thin film deposition process, which contributes to a superior being. HIPIMS at the same power, but the deposition speed is slow in comparison with DC disadvantages. Since recently as a replacement for HIPIMS modulated pulse power (MPP) has been developed. This ionization rate of the sputtered species can increase the deposition rate is lowered and at the same time to overcome the problems to be reported. The differences between the MPP and the HIPIMS is a simple single pulse with a HIPIMS whereas, MPP is 3 ms in pulse length is adjustable, with the full set of multi-pulses within the pulse period and the pulse is applied can be micro advantages. In this experiment, $In_2O_3$ : $SnO_2$ composition ratio of 9 : 1 wt% target was used, Ar : $O_2$ flow rate ratio is 4.8 to 13.0% of the rate of deposition was carried out at room temperature. Ar 40 sccm and the flow rate of $O_2$ and then fixed 2 ~ 6 sccm was compared against that. The thickness of the thin film deposition is fixed at 60 nm, when the partial pressure of oxygen at 9.1%, the specific resistance value of $4.565{\times}10^{-4}{\Omega}cm$, transmittance 86.6%, mobility $32.29cm^2/Vs$ to obtain the value.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.409-413
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• 2001

In this study, high rate deposition of thick CrNx films was carried out by crossed field unbalanced magnetron sputtering for the special application such as piston ring employed in automobile engine. For the high rate deposition and thick CrNx films formation with thickness of 30$\mu\textrm{m}$, high power density of $35W/cm^2$ in each target was induced and the multi-layer films of Cr/CrN and $\alpha$-Cr/CrN were synthesized by control of $N_2$ flow rate. The dynamic deposition rate of Cr and $\alpha$-CrN film was reached to 0.17$\mu\textrm{m}$/min and 0.12$\mu\textrm{m}$/rnin and the thick CrN$_{x}$. film of 30$\mu\textrm{m}$ could be obtained less than 5 hours. The maximum hardness was obtained above 2200 kg/mm$^2$ and adhesion strength was measured in about 70N, in case of multi-layers films. And the friction coefficient was measured by 0.4, which was similar to the value of CrN single-layer film.m.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.23.2-23.2
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• 2009

Atomic layer deposition (ALD)have been proven to be a very attractive technique for the fabrication of advanced gate dielectrics and DRAM insulators due to excellent conformality and precise control of film thickness and composition, However, one major disadvantages of ALD is its relatively low deposition rate (throughput) because the deposition rate is typically limited by the time required for purging process between the introduction of precursors. In order to improve its throughput, many efforts have been made by commercial companies, for example,the modification reactor and development of precursors. However, any promising solution has not reported to date. We developed a new concept ALD system(Lucida TM S200) with high-throughput. In this process, a continuous flow of ALD precursor and purging gas are simultaneously introduced from different locations in the ALD reactor. A cyclic ALD process is carried out by moving the wafer holder up and down. Therefore, the time required for ALD reaction cycle is determined by speed of the wafer holder and vapor pressure of precursors. We will present the operating principle of our system and results of deposition.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1874-1875
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• 2004

A high rate deposition sputtering process of magnesium oxide thin film in oxide mode has been developed using a 20 kW unipolar pulsed power supply. The powersupply was operated at a maximum constant voltage of 500 V and a constant current of 40 A. The pulse repetition rate and the duty were changed in the ranges of 10 ${\sim}$ 50 kHz and 10 ${\sim}$ 60 %, respectively. The deposition rate increased with increasing incident power to the target. Maximum incident power to the magnesium target was obtained by the control of frequency, duty and current. The deposition rate of a moving state was 9 nm m/min at the average power of 1.5 kW. This technique is proposed to apply high through-put sputtering system for plasma display panel.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.13-14
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• 2008

A high rate magnetron sputtering source (HRMSS) was employed to deposit thick copper films. The HRMSS was manufactured by changing the magnet size, arrangement, and field intensity. For the preparation of thick copper films, the copper sputtering conditions using HRMSS were characterized based on the deposition parameters such as discharge characteristics, I-V characteristics of the source, and change of deposition rate. The deposition rate of copper turned out to be more than 5 times than that of conventional magnetron sputtering source. Thick copper films having thickness of more than $20{\mu}m$ were prepared by using HRMSS. The morphology and orientation of the films were investigated by scanning electron microscopy and x-ray diffraction.

• Journal of Electrical Engineering and Technology
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• v.1 no.1
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• pp.110-113
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• 2006

A high rate deposition sputtering process of magnesium oxide thin film in oxide mode has been developed using a 20 kW unipolar pulsed power supply. The power supply was operated at a maximum constant voltage of 500 V and a constant current of 40 A. The pulse repetition rate and the duty were changed in the ranges of $10\sim50$ kHz and $10\sim60%$, respectively. The deposition rate increased with rising incident power to the target. Maximum incident power to the magnesium target was obtained by the control of frequency, duty and current. The deposition rate of a moving state was 9 nm m/min at the average power of 1.5 kW. This result shows higher deposition rate than any other previous work involving reactive sputtering in oxide mode. The thickness uniformities over the entire substrate area of $982mm{\times}563mm$ were observed at the processing pressure of $2.8\sim9.5$ mTorr. The thickness distribution was improved at lower pressure. This technique is proposed for application to a high through-put sputtering system for plasma display panels.

• Magazine of the Korean Society of Agricultural Engineers
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• v.17 no.3
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• pp.3840-3847
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• 1975

With 30 excisting reservoirs in the Chin-Young area, the Sedimentation of the reservoirs has been calculated by comparing the present capacity with the original value, which revealed its reduced reservoir capacity. The reservoirs has a total drainage area of 3l4l ha, with a total capacity of 43.23 ha-m, and are short of water supply due to reduction of reservoir capacity, Annual sedimentation in the reservoir is relation to the drainage area, the mean of annual rainfall, and the slop of drainage area. The results of obtained from the investigation are summarized as follows: (1) A Sediment deposition rate is high, being about 7.03㎥/ha of drainage area, and resulting in the overage decrease of reservoir capacity by 16.1%. This high rate of deposition coule be mainly attributed to the serve denudation of forests due to disorderly cuttings of tree. (2) An average unit storageof 116mm as the time of initial construction is decreased to 95.6mm at present. This phenomena cause a greater storage of irrigation water, sinceit was assumed that original storage quantity itself was already in short. (3) A sediment deposition rate as a relation to the capacity of unit drainge area is as follow: Qs=1.27(C/A)0.6 and standard deviation is 185.5㎥/$\textrm{km}^2$/year. (4) A sediment deposition rate as a relation to the mean of annual rainfall is as follow: Qs=21.9p10.5 and the standard deviation is 364.8㎥/$\textrm{km}^2$/year. (5) A sediment deposition rate as a relation to the mean slop of drainage area is follow: Qs=39.6S0.75 and the standard deviation is 190.2㎥/$\textrm{km}^2$/year (6) Asediment deposition rate as a relation to the drainage area, mean of rainfall, mean of slope of drainage area is: Log Qs=0.197+0.108LogA-6.72LogP+2.20LogS and the standard deviation is 92.4㎥/$\textrm{km}^2$/year

• Journal of the Korean Ceramic Society
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• v.45 no.5
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• pp.280-284
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• 2008

In order to investigate residence time effect on the growth of ZrC film, the ZrC films grew with various system total pressure (P) and total flow rate (Q) by low pressure chemical vapor deposition because residence time is function of system total pressure and total flow rate. Thermodynamic calculations predict that the decomposition of source gases ($ZrCl_4$ and $CH_4$) would be low as increasing the residence time. Thermodynamic calculations results were proved by investigating deposition rate with various residence time. Deposition rate decreased with residence time of source gas increased. Besides, depletion effect accelerated diminution of deposition rate at high residence time. On the other hands, the deposition rated was increased as decreasing the residence time because fast moving of intermediate gas species decrease the depletion effect. The crystal structure was not changed with residence time. However, the largest size of faceted grain showed up to specific residence time and the size of grain was decreased whether residence time increase or not.