• 한국표면공학회지
• /
• 제46권4호
• /
• pp.168-174
• /
• 2013

In this study, low-cost, high-speed deposition, excellent processability, high mechanical strength and electrical conductivity, chemical stability and corrosion resistance of stainless steel to meet the obsessive-compulsive (0.1 mm or less) were selected CrN thin film. new price reduction to sputter deposition causes - the possibility of sublimation source for inductively coupled plasma Cr rods were attempts by DC bias. 0.6 Pa Ar inductively coupled plasmas of 2.4 MHz, 500 W, keeping Cr Rod DC bias power 30 W (900 V, 0.02 A) is applied, $N_2$ flow rate of 0.5, 1.0, 1.5 sccm by varying the characteristics of were analyzed. $N_2$ flow rate increases, decreases and $Cr_2N$, CrN was found to increase. In addition to corrosion resistance and contact resistance, corrosion resistance, electrical conductivity was evaluated. corrosion current density than $N_2$ 0 sccm was sure to rise in all, $N_2$ 1 sccm at $4.390{\times}10^{-7}$ (at 0.6 V) $A{\cdot}cm^{-2}$, respectively. electrical conductivity process results when $N_2$ 1 sccm 28.8 $m{\Omega}/cm^2$ with the lowest value of the contact resistance was confirmed that came out. The OES (SQ-2000) and QMS (CPM-300) using a reactive deposition process to add $N_2$ to maintain a uniform deposition rate was confirmed that.

• 반도체디스플레이기술학회지
• /
• 제18권4호
• /
• pp.35-39
• /
• 2019

Effect of Ge₂Sb₂Te₅ (GST) chalcogen composition on plasma induced damage was investigated by using Ar ions and F radicals. Experiments were carried out with three different modes; the physical etching, the chemical etching, and the ion-enhanced chemical etching mode. For the physical etching by Ar ions, the sputtering yield was obtained according to ion bombarding energy and there was no change in GST composition ratio. In the plasma mode, the lowest etch rate was measured at the same applied power and there was also no plasma induced damage. In the ion-enhanced chemical etching conditions irradiated with high energy ions and F halogen radicals, the GST composition ratio was changed according to the density of F radicals, resulting in higher roughness of the etched surface. The change of GST composition ratio in halogen plasma is caused by the volatility difference of GST-halogen compounds with high energy ions over than the activation energy of surface reactions.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.105-105
• /
• 2009

$ZrO_2$ is one of the most attractive high dielectric constant (high-k) materials. As integrated circuit device dimensions continue to be scaled down, high-k materials have been studied more to resolve the problems for replacing the EY31conventional $SiO_2$. $ZrO_2$ has many favorable properties as a high dielectric constant (k= 20~25), wide band gap (5~7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2/Si$ structure. In order to get fine-line patterns, plasma etching has been studied more in the fabrication of ultra large-scale integrated circuits. The relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compound In this study, the surface kinetic properties of $ZrO_2$ thin film was investigated in function of Ch addition to $BCl_3/Ar$ gas mixture ratio, RF power and DC-bias power based on substrate temperature. The figure 1 showed the etch rate of $ZrO_2$ thin film as function of gas mixing ratio of $Cl_2/BCl_3/Ar$ dependent on temperature. The chemical state of film was investigated using x-ray photoelectron spectroscopy (XPS). The characteristics of the plasma were estimated using optical emission spectroscopy (OES). Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• 한국임상수의학회지
• /
• 제29권4호
• /
• pp.271-276
• /
• 2012

사람에 연구에 따르면 심부전 진단에 널리 사용되는 NT-proBNP농도는 비만, 비만 관련인자들과 밀접한 상관 관계가 있는 것으로 알려져 있다. 그러나 이러한 상관관계는 아직까지 수의분야에서는 입증된 바가 없다. 따라서 본 연구에서는 다양한 정도의 이첨판 패쇄부전증(CMVI)에 이환된 73마리 개 집단에서 NT-proBNP와 비만 및 비만 관련인자들간의 상호관계를 조사하였다. 절식시 혈당 농도, 지방관련 인자(i.e., total triglycerides [TG], total cholesterol [TC], high-density lipoprotein cholesterol [HDL-C], low-density lipoprotein cholesterol [LDL-C]), fructosamine, insulin 및 NT-proBNP 농도를 측정하였다. Insulin/glucose ratio 역시 계산하였다. NT-proBNP 농도는 CMVI에 의한 심부전의 정도에 따라 농도변화가 관찰되었으며, body condition scores (BCS), insulin 및 fructosamine 농도와도 관련이 있었다. 또한 본 연구를 통해 비만과 혈중 NT-proBNP농도 간에 상관관계 역시 확인되었다. 또한 NT-proBNP농도는 비만과 관련 있는 인자인 fructosamine과 insulin농도와도 관련이 있었다. 본 연구는 개에서 NT-proBNP농도와 비만 정도와 상관관계를 입증한 첫 보고이다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2012년도 춘계학술발표대회
• /
• pp.90.2-90.2
• /
• 2012

Graphene has recently attracted significant attention because of its unique optical and electrical properties. For practical device applications, special attention has to be paid to the synthesis of high-quality graphene on large-area substrates. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on Ni or Cu substrates. Among these techniques, CVD is superior to the others from the perspective of technological applications because of its possibility to produce a large size graphene. PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures, such as carbon nanotubes and nanosheets. Compared with thermal CVD, PECVD possesses a unique advantage of additional high-density reactive gas atoms and radicals, facilitating low-temperature, rapid, and controllable synthesis. In the current study, we report results in synthesizing of high-quality graphene films on a Ni films at low temperature. Controllable synthesis of quality graphene on Cu foil through inductively-coupled plasma CVD (ICPCVD), in which the surface chemistry is significantly different from that of conventional thermal CVD, was also discussed.

• Animal cells and systems
• /
• 제9권1호
• /
• pp.19-25
• /
• 2005

This study was conducted to determine the effect of dietary salt on the synthesis of glucocorticoids in the adrenal cortex of mice. Mice had ad libitum access to 3% sodium chloride as the only drinking fluid (high salt diet) for either 4 days or 4 weeks. Adrenocortical expression of cytochrome P450 11beta-hydroxylase, a major regulatory enzyme in the biosynthesis of glucocorticoids, was examined by immunohistochemistry and western blot analysis. Ultrastructure of adrenocortical cell and plasma level of corticosterone were analyzed as well. Size and density of lipid droplets in the cortical cell were increased by high salt diet. Four days of high salt diet decreased P450 11beta-hydroxylase in the adrenal cortex, but 4 weeks increased it. Plasma level of corticosterone changed in parallel with the Cortical level of P450 11 beta-hydroxylase. These results suggest that high salt diet may modulate the biosynthesis of glucocorticoids, at least partly, via regulating the expression of P450 11beta-hydroxylase in adrenocortical cells.

• 한국항해항만학회:학술대회논문집
• /
• 한국항해항만학회 2000년도 추계학술대회논문집
• /
• pp.40-44
• /
• 2000

In this paper, since the research on the etching of SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin film was few (specially Cl$_2$-base ), we had studied the surface reaction of SBT thin films using the OES in high density plasma etching as a function of rf power, dc bias voltage, and Cl$_2$/(C1$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction in our previous papers$^{1.2}$ . The change of Cl radical density that is measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhance to increase the etch rates of SBT thin films and these results were confirmed by XPS analysis.

• 한국전기전자재료학회논문지
• /
• 제14권3호
• /
• pp.185-189
• /
• 2001

In this paper, since the research on the etching of SrBi$_2$Ta$_2$$O_{9}$(SBT) thin film was few (specially Cl$_2$-base) we had studied the surface reaction of SBT thin films. We have used the OES(optical emission spectroscopy) in high density plasma etching as a function of RF power, dc bias voltage, and Cl$_2$/(Cl$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction. The change of Cl radical density that was measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhanced to increase the etch rates SBT thin films. These results were confirmed by XPS(x-ray photoelectron spectroscopy) analysis.s.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.311-311
• /
• 2011

$TiN{\times}$박막은 우수한 내마모성 및 내부식성, 높은 경도 그리고 열적 안정성 등으로 인하여, 절삭공구 및 기계적 부품의 하드코팅, 2차 연료 전지용 확산방지막의 코팅재료로서 광범위하게 사용되어지고 있다. 일반적으로 $TiN{\times}$ 박막은 화학 기상 증착법(CVD)을 이용하였으나, 최근에는 대면적에 균일한 코팅이 가능하고 기판과 박막상의 부착력이 우수하며, 프로세스를 제어하기 쉬운 물리적 기상 증착법(PVD)의 스퍼터링법에 대한 관심이 고조되고 있다. 그러나 스퍼터링법으로 증착된 $TiN{\times}$ 박막의 물성은 주상구조와 국부적 표면결함을 포함하는 박막의 미세구조에 의존하기 때문에 주상구조 사이에 존재하는 Void 와 Pinhole 그리고 crack들이 원인으로 작용하여, 내부식성 및 기계적 특성이 급속도로 저하되는 단점이 있다. 이러한 단점을 보완하기 위해서, 본 연구에서는 기판온도를(RT, $200^{\circ}C$, $400^{\circ}C$)증가시켜 실험 하였다. 이는 온도증가에 따른 박막의 치밀화가 이루어지고 결함이 감소하여 내부식성 특성향상이 기대되어진다. 또한 플라즈마 밀도를 높이기 위해서, 기존 DC 마그네트론 스퍼터링법에 전자기장을 추가로 인가하였다. 이는 플라즈마 밀도증가에 따른 고반응성의 질소 래디컬의 생성율 증가에 기인하여 박막 형성시 질화반응을 촉진시킴으로써 박막의 치밀화 및 내부식성 특성향상이 기대되어진다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.71-72
• /
• 2006

플라스틱 기판 위에 유도 결합 플라즈마 화학적 기상 증착장치 (Inductively Coupled Plasma Chemicai Vapor Deposition, ICP-CVD) 를 사용하여 실리콘 산화막 ($SiO_2$)을 증착하고, 엑시머레이저 어널링 (Excimer Laser Annealing, ELA) 과 $N_{2}O$ 플라즈마 전처리를 통해, 전기용량-전압(Capacitance-Voltage, C-V) 특성과 항복 전압장 (Breakdown Voltage Field) 과 같은 전기적 특성을 개선시켰다. 에너지 밀도 $250\;mJ/cm^2$ 의 엑시머 레이저 어닐링은 실리콘 산화막의 평탄 전압 (Flat Band Voltage) 을 0V에 가까이 이동시키고, 유효 산화 전하밀도 (Effective Oxide Charge Density)를 크게 감소시킨다. $N_{2}O$ 플라즈마 전처리를 통해 항복 전압장은 6MV/cm 에서 9 MV/cm 으로 향상된다. 엑시머 레이저 어닐링과 $N_{2}O$ 플라즈마 전처리를 통해 평탄 전압은 -9V 에서 -1.8V 로 향상되고, 유효 전하 밀도 (Effective Charge Density) 는 $400^{\circ}C$에서 TEOS 실리콘 산화막을 증착하는 경우의 유효 전하 밀도 수준까지 감소한다.