Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Investigation of Ge2Sb2Te5 Etching Damage by Halogen Plasmas

할로겐 플라즈마에 의한 Ge2Sb2Te5 식각 데미지 연구

  • Jang, Yun Chang (Department of Energy Systems Engineering, Seoul National University) ;
  • Yoo, Chan Young (Department of Materials Science and Engineering, Seoul National University) ;
  • Ryu, Sangwon (Department of Energy Systems Engineering, Seoul National University) ;
  • Kwon, Ji Won (Department of Energy Systems Engineering, Seoul National University) ;
  • Kim, Gon Ho (Department of Energy Systems Engineering, Seoul National University)
  • 장윤창 (서울대학교 에너지시스템공학부) ;
  • 유찬영 (서울대학교 재료공학부) ;
  • 유상원 (서울대학교 에너지시스템공학부) ;
  • 권지원 (서울대학교 에너지시스템공학부) ;
  • 김곤호 (서울대학교 에너지시스템공학부)
  • Received : 2019.11.21
  • Accepted : 2019.12.04
  • Published : 2019.12.31
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Abstract

Effect of Ge2Sb2Te5 (GST) chalcogen composition on plasma induced damage was investigated by using Ar ions and F radicals. Experiments were carried out with three different modes; the physical etching, the chemical etching, and the ion-enhanced chemical etching mode. For the physical etching by Ar ions, the sputtering yield was obtained according to ion bombarding energy and there was no change in GST composition ratio. In the plasma mode, the lowest etch rate was measured at the same applied power and there was also no plasma induced damage. In the ion-enhanced chemical etching conditions irradiated with high energy ions and F halogen radicals, the GST composition ratio was changed according to the density of F radicals, resulting in higher roughness of the etched surface. The change of GST composition ratio in halogen plasma is caused by the volatility difference of GST-halogen compounds with high energy ions over than the activation energy of surface reactions.

Keywords

References

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