The Study of Etching Mechanism in $SrBi_2Ta_2O_9$ thin film by Optical Emission Spectroscopy

OES 를 이용한 SBT 박막의 식각 메카니즘 연구

  • 신성욱 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부) ;
  • 장의구 (중앙대학교 전자전기공학부) ;
  • 이원재 (한국전자통신연구원 회로소자기술연구소) ;
  • 유병곤 (한국전자통신연구원 회로소자기술연구소) ;
  • 김태형 (중앙대학교 전자전기공학부)
  • Published : 2000.11.01

Abstract

In this paper, since the research on the etching of SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin film was few (specially Cl$_2$-base ), we had studied the surface reaction of SBT thin films using the OES in high density plasma etching as a function of rf power, dc bias voltage, and Cl$_2$/(C1$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction in our previous papers$^{1.2}$ . The change of Cl radical density that is measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhance to increase the etch rates of SBT thin films and these results were confirmed by XPS analysis.

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