• Design & Manufacturing
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• v.12 no.1
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• pp.47-51
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• 2018

As the IT industry rapidly progresses, the functions of electronic devices and display devices are integrated with high density, and the model is changed in a short period of time. To implement the integration technology, a uniform micro-pattern implementation technique to drive and control the product is required. The most important technology for the micro pattern generation is the exposure processing technology. Failure to implement the basic pattern in this process cannot satisfy the demands in the manufacturing field. In addition, the conventional exposure method of the mask method cannot cope with the small-scale production of various types of products, and it is not possible to implement a micro-pattern, so an alternative technology must be secured. In this study, the technology to implement the required micro-pattern in semiconductor processing is presented through the photolithography process and plasma etching.

• Journal of Welding and Joining
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• v.9 no.4
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• pp.69-74
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• 1991

The Plasma Arc Cutting Method using high density and hight temperature beam is well applicable to the cutting of the nonferrous metal (Al alloy ) and stainless steel which are unable to be cut by the use of the oxy-fuel gas. This study focalizes on the cutting phenomena of the plate of (mm) thickness, since the cutting phenomena of thick plates have been rather thoroughly studied. In this study the cutting groove, adhesive phenomena of dross, surface roughness were measured according to the variation of cutting speed and compared with the case of mild steel plates. The result showed that the kerf width variation of Al alloy was similar to the case of mild steel, while that of the stainless steel differed from the mild steel. In the adhesive phenomena of dross, 6(mm) thick plates of Al alloy showed a difference from those of thick plates, but the stainless steel was similar to thick plates. The surface roughness variation of Al alloy wias minimum at 67 cm/min, while that of stainless steel was at 30cm/min.

• Journal of Biomedical Engineering Research
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• v.10 no.1
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• pp.43-52
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• 1989

We modified polymer surfaces, polyethylene, polystyrene and polyester, to improve cellcompatibility. For surface modification of the polymers, we used various surface treatment methods; physicochemical oxidation methods such as plasma discharge, corona discharge, sulfuric acid and chloric acid treatments, and biological methods such as adsorption of plasma protein and fibronectin onto the polymer surfaces. The treated polymer surfaces were characterized by electron spectroscopy for chemical analysis ( ESCA ). The physicochemically treated polymers showed different surface chemical structures depending on the treated methods. The sulfuric acid-treated surfaces showed greater carboxyl groups than those of plasma- or corona- treated surfaces, while the chloric acid-treated one showed high density of hydroxyl group on the surface. By the biological treatments, the surfaces were uniformly coated with proteins. The fibronectin adsorbed on the surface seems to have unique properties for cell binding.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.83-89
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• 2011

In this study, we investigated the effects of shutter control by Reactive Magnetron Sputtering using Inductively-Coupled Plasma(ICP) for obtaining ZnO thin films with high purity. The surface morphologies and structure of deposited ZnO thin films were characterized using Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and X-ray Diffractometer (XRD). Also, optical and chemical properties of ZnO thin films were analyzed by Spectroscopic Ellipsometer (SE) and X-ray Photoelectron spectroscopy (XPS). As a result, it observed that ZnO thin films grown at reactive sputtering using shutter control and ICP were higher density, lower surface roughness, better crystallinity than other conventional sputtering deposition methods. For obtaining better quality deposition ZnO thin films, we will investigate the effects of substrate temperature and RF power on shutter control by a reactive magnetron sputtering using inductively-coupled plasma.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1704-1706
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• 2003

Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56 [MHz] have been measured over a wide range of power at gas pressure ranging from $1{\sim}70$ [mTorr].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.133-137
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• 2002

In this paper, the $CF_{4}$ decomposition rate are investigated for a simulated three plasma reactors which are metal particle reactor, spiral wire reactor and reactor with porous dielectric as applied voltage. The $CF_{4}$ decomposition rate by plasma reactor with porous dielectric had a gain of 20~25[%] over that by plasma reactor with spiral wire or metal particle electrode. The $CF_{4}$ decomposition efficiency increases with increasing applied voltage up to the critical voltage for spark formation. The $CF_{4}$ decomposition efficiency of metal particle reactor was about 80[%] at AC 24[kV]. However, decomposition efficiency is more than 90% in case of the reactor with porous dielectric. we think, the reactor with porous dielectric should be much better than other reactors for $CF_{4}$ decomposition.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.157-158
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• 2007

Tin oxide films were successfully crystallized without additional heating by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD). The degree of crystallization was affected by the ICP power, hydrogen flow and ion bombardment induced by negative substrate bias. The substrate temperature was increased only up to $150^{\sim}180^{\circ}C$ by plasma heating, which suggests that the formation of $SnO_2$ crystalswas caused by enhanced reactivity of precursors in high density plasma. The hardness of deposited tin oxide films ranged from 5.5 to 11GPa at different hydrogen flow rates.

• The Bulletin of The Korean Astronomical Society
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• v.42 no.2
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• pp.65.4-65.4
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• 2017

The laboratory astrophysics is a new emerging field of basic sciences, and has tremendous discovery potentials. The laboratory astrophysics investigates the basic physical phenomena in the astrophysical objects in controlled and reproducible manners, which has become possible only recently due to the newly-established intense photon and ion beam facilities worldwide. In this presentation, we will introduce several promising ideas for laboratory astrophysics programs that might be readily incorporated in the Pohang Accelerator Laboratory X-ray Free Electron Laser (PAL-XFEL). For example, precise spectroscopic measurements using Electron Beam Ion Trap (EBIT) and intense X-ray photons from the PAL-XFEL can be performed to explore the fundamental processes in high energy X-ray phenomena in the visible universe. Besides, in many violent astrophysical events, the energy density of matter becomes so high that the traditional plasma physics description becomes inapplicable. Generation of such high-energy density states can be also be achieved by using the intense photon beams available from the PAL-XFEL.

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.57-62
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• 2005

Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using lEE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.50-50
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• 2011

The aluminum nitride films were prepared by RF magnetron sputtering using an AlN ceramic target. The crystallinity, grain size, Al-N bonding and thermal conductivity were investigated in dependence on the plasma power densities (4.93, 7.40, 9.87 W/$cm^2$) during sputtering. High thermal conductivity is important properties of A1N passivation layer for functioning properly in thermal inkjet printhead. The crytallinity, grain size, Al-N bonding formation and chemical composition were observed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), fourier transform infrared (FTIR) and X-ray photoelectron spectroscopy (XPS), respectively. The AlN thin film was changed from amorphous to crystalline as the power density was increased, and the largest grain size appeared at medium power density. The near stoichiometry Al-N bonding ratio was acquired at medium power density. So, we know that the AlN thin film had better thermal conductivity with crystalline phase and near stoichometry Al-N bonding ratio at 7.40 W/$cm^2$ power density.