Proceedings of the Korean Institute of Surface Engineering Conference (한국표면공학회:학술대회논문집)

The Korean Institute of Surface Engineering (한국표면공학회)
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Low temperature preparation of $SnO_2$ films by ICP-CVD

ICP-CVD를 이용한 $SnO_2$ 박막 저온 증착

  • Lee, H.Y. (School of Material Science and Engineering, Seoul National University) ;
  • Lee, J.J. (School of Material Science and Engineering, Seoul National University)
  • Published : 2007.04.05
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Abstract

Tin oxide films were successfully crystallized without additional heating by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD). The degree of crystallization was affected by the ICP power, hydrogen flow and ion bombardment induced by negative substrate bias. The substrate temperature was increased only up to $150^{\sim}180^{\circ}C$ by plasma heating, which suggests that the formation of $SnO_2$ crystalswas caused by enhanced reactivity of precursors in high density plasma. The hardness of deposited tin oxide films ranged from 5.5 to 11GPa at different hydrogen flow rates.

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