• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.46-52
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• 1994

DC and AC current crowding effects for microwave and high speed bipolar transistors are investigated in detail using a new and accurate measurement technique based on Z-parameter equationa. Using the new measurement technique dc and ac current crowding effects have been explained clearly in bipolar junction transistors. To model ac crowding effects a capacitive element defined as base capacitance (C$_b$), called ac crowding capacitance is added to base resistance in parallel thereby treating the base resistance(R$_b$) as base impedance Z$_b$. It is shown that base resistance decreases with increasing collector current due to dc current crowding and approaches to a certain limited value at high collector current due to current crowding and approaches to a certain limited value at high collector currents regardless of the emitter size. It is also observed that due to ac current crowding base capacitance increases with increasing collector current. To quantigy the ac crowding effects for SPICE circuit simulation the base capacitance(C$_b$) including the base depletion and diffusion components has been modeled with an analytical expression form.

• Journal of Electrical Engineering and Technology
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• v.8 no.4
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• pp.808-812
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• 2013

Multilayer capacitors with high ripple current and high capacitance were manufactured. The electrical properties of these capacitors were characterized for potential application for DC-link capacitors in hybrid electric vehicle inverters. Internal electrode structures were designed to achieve high capacitance and reliability. A single multilayer capacitor showed $0.46{\mu}F/cm^3$ of capacitance, 0.65% of dielectric loss, and 1450 V to 1650 V of dielectric breakdown voltage depending on the design of the internal electrode. The capacitor module designed with several multilayer capacitors gave a total capacitance of $450{\mu}F$, which is enough for hybrid electric vehicles. In particular, an equivalent series resistance of $4.5m{\Omega}$ or less will result in 60 $A_{rms}$, thereby reaching the allowed ripple current for hybrid electric vehicles.

• Journal of the Korean Society of Industry Convergence
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• v.27 no.4_2
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• pp.935-942
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• 2024

This study analyzes the effects of the parasitic capacitance of the SiC MOSFET used in the Dual Active Bridge ( DAB) converter and proposes a method for calculating the leakage inductance of the transformer. The DAB converter employs high-frequency switching to achieve high efficiency, high power density, and reliability. MOSFETs possess parasitic capacitance, which induces resonance with the leakage inductance of the transformer during switching operations, resulting in a voltage change delay. This paper discusses the effect of the delay of voltage changes on the DAB converter output and proposes a method to calculate the delay time. This method aims to equalize the delay time to minimize this effect and enhance the accuracy of the leakage inductance calculation of the transformer. The proposed method is validated through experiments and simulations.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.25.2-25.2
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• 2011

Recently, thin film capacitors used for vehicle inverters are small size, high capacitance, fast response, and large capacitance. But its applications were made up of liquid as electrolyte, so its capacitors are limited to low operating temperature range and the polarity. This research proposes using Ni-P alloys by electroless plating as the electrode instead of liquid electrode. Our substrate has a high aspect ratio and complicated shape because of anodic aluminum oxide (AAO). We used AAO because film thickness and effective surface area are depended on for high capacitance. As the metal electrode instead of electrolyte is injected into AAO, the film capacitor has advantages high voltage, wide operating temperature, and excellent frequency property. However, thin film capacitor made by electroless-plated Ni on AAO for full-filling into etched tunnel was limited from optimizing the deposition process so as to prevent open-through pore structures at the electroless plating owing to complicated morphological structure. In this paper, the electroless plating parameters are controlled by temperature in electroless Ni plating for reducing reaction rate. The Electrical properties with I-V and capacitance density were measured. By using nickel electrode, the capacitance density for the etched and Ni electroless plated films was 100 nFcm-2 while that for a film without any etch tunnel was 12.5 nFcm-2. Breakdown voltage and leakage current are improved, as the properties of metal deposition by electroless plating. The synthesized final nanostructures were characterized by scanning electron microscopy (SEM).

• Journal of Electrical Engineering and Technology
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• v.2 no.3
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• pp.401-407
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• 2007

Precise absolute measurement of the errors in a potential transformer (PT) can be achieved using high voltage capacitance bridge (HVCB) and capacitive divider. The uncertainty in a PT measurement using the HVCB system was evaluated by considering the overall factors affecting during the calibration of a PT. The expanded uncertainties are found to be not more than $30{\times}10^{-6}$ for ratio and $30{\mu}rad$ for phase up to the primary voltage of $V_p=22kV$. For same PTs, the measured errors in KRISS (Korea Research Institute of Standards and Science) using our bridge are well coincide with those in NMIA (National Measurement Institute of Australia) and PTB (Physikalisch-Technische Bundesanstalt) within the corresponding uncertainties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.613-616
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• 1999

An active-matrix LCD using thin film transistors (TFTs)has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate signal distortion and pixel charging capability, which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the new set of capacitance models on the pixel operations can be effectively analyzed, The set of models which is adopted from VLSI interconnections calculate more precise capacitance. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

• Journal of Sensor Science and Technology
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• v.30 no.2
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• pp.71-75
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• 2021

Recently, transition-metal-based hydroxide materials have attracted significant attention in various electrochemical applications owing to their low cost, high stability, and versatility in composition and morphology. Among these applications, transition-metal-based hydroxides have exhibited significant potential in supercapacitors owing to their multiple redox states that can considerably enhance the supercapacitance performance. In this study, nanostructured Ni-Mn double hydroxide is directly grown on a conductive substrate using an electrodeposition method. Ni-Mn double hydroxide exhibits excellent electrochemical charge-storage properties in a 1 M KOH electrolyte, such as a specific capacitance of 1364 Fg-1 at a current density of 1 mAcm-2 and a capacitance retention of 94% over 3000 charge-discharge cycles at a current density of 10 mAcm-2. The present work demonstrates a scalable, time-saving, and cost-effective approach for the preparation of Ni-Mn double hydroxide with potential application in high-charge-storage kinetics, which can also be extended for other transition-metal-based double hydroxides.

• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.300-301
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• 2003

As the demand for high frequency(bandwidth) optical module is increased, there is a need for fabricating silicon optical bench(SiOB) with low parasitic impedance. In this paper, we discuss multi-layer structure method for manufacturing SiOB with low capacitance. This structure method decreases the capacitance between the conductive patterns for about 94∼97％ compared to the conventional structure without raising the resistivity of silicon, or increasing the thickness of the dielectric film.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.287.2-287.2
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• 2013

We synthesized a new composite of poly sodium 4-styrenesulfonate intercalated graphene oxide for energy storage devices by controlling oxidation time in the synthesis of graphite oxide. Specific capacitance was improved from 20 F/g of the previous composites to 88 F/g of the new composite at the current density of 0.3 A/g. The capacitance retention was 94% after 3000 cycles, indicating that the new composites of high cyclic stability, prominent performance as electric double layer capacitor, and even low resistance could be an excellent carbon based electrode for further energy storage devices.

• Korean Journal of Materials Research
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• v.29 no.10
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• pp.623-630
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• 2019

Because of their excellent stability and highly specific surface area, carbon based materials have received attention as electrode materials of electrical double-layer capacitors(EDLCs). Biomass based carbon materials have been studied for electrode materials of EDLCs; these materials have low capacitance and high-rate performance. We fabricated tofu based porous activated carbon by polymer dissolution reaction and KOH activation. The activated porous carbon(APC-15), which has an optimum condition of 15 wt%, has a high specific surface area($1,296.1m^2\;g^{-1}$), an increased average pore diameter(2.3194 nm), and a high mesopore distribution(32.4 %), as well as increased surface functional groups. In addition, APC has a high specific capacitance($195F\;g^{-1}$) at low current density of $0.1A\;g^{-1}$ and excellent specific capacitance($164F\;g^{-1}$) at high current density of $2.0A\;g^{-1}$. Due to the increased specific surface area, volume ratio of mesopores, and surface functional groups, the specific capacitance and high-rate performance increased. Consequently, the tofu based activated porous carbon can be proposed as an electrode material for high-performance EDLCs.