Multi-layer Structure Method for Manufacturing SiOB with Low Capacitance

낮은 정전용량을 가진 실리콘 광학벤치를 제작하기 위한 적층구조 방법

  • 김유식 (삼성전자 통신연구소 광부품 Lab.) ;
  • 이중희 (삼성전자 통신연구소 광부품 Lab) ;
  • 박문규 (삼성전자 통신연구소 광부품 Lab) ;
  • 장동훈 (삼성전자 통신연구소 광부품 Lab) ;
  • 김태일 (삼성전자 통신연구소 광부품 Lab.)
  • Published : 2003.02.01

Abstract

As the demand for high frequency(bandwidth) optical module is increased, there is a need for fabricating silicon optical bench(SiOB) with low parasitic impedance. In this paper, we discuss multi-layer structure method for manufacturing SiOB with low capacitance. This structure method decreases the capacitance between the conductive patterns for about 94∼97% compared to the conventional structure without raising the resistivity of silicon, or increasing the thickness of the dielectric film.

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