Simulations of Pixel Characteristics for Large Size and High Qualify TFT-LCD using a new sophisticated Capacitance Formulas

새로운 정전용량 계산식물 이용한 대면적 .고화질 TFT-LCD의 화소 특성 시뮬레이션

  • 윤영준 (홍익대학교 전자전기공학부) ;
  • 정순신 (홍익대학교 전자전기공학부) ;
  • 김태형 (홍익대학교 전자전기공학부) ;
  • 박재우 (홍익대학교 전자전기공학부) ;
  • 최종선 (홍익대학교 전자전기공학부)
  • Published : 1999.05.01

Abstract

An active-matrix LCD using thin film transistors (TFTs)has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate signal distortion and pixel charging capability, which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the new set of capacitance models on the pixel operations can be effectively analyzed, The set of models which is adopted from VLSI interconnections calculate more precise capacitance. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

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