• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.12
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• pp.1678-1687
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• 2013

This paper describes a prototype of 3-phase 3.3kV/220V 6kVA modular semiconductor transformer developed in the lab for feasibility study. The developed prototype is composed of three single-phase units coupled in Y-connection. Each single-phase unit with a rating of 1.9kV/127V 2kVA consists of a high-voltage high-frequency resonant AC-DC converter, a low-voltage hybrid-switching DC-DC converter, and a low-voltage hybrid-switching DC-AC converter. Also each single-phase unit has two DSP controllers to control converter operation and to acquire monitoring data. Monitoring system was developed based on LabView by using CAN communication link between the DSP controller and PC. Through various experimental analyses it was verified that the prototype operates with proper performance under normal and sag condition. The system efficiency can be improved by adopting optimal design and replacing the IGBT switch with the SiC MOSFET switch. The developed prototype confirms a possibility to build a commercial high-voltage high-power semiconductor transformer by increasing the number of series-connected converter modules in high-voltage side and improving the performance of switching element.

• Journal of IKEEE
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• v.22 no.2
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• pp.339-343
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• 2018

Power semiconductors are semiconductors capable of controlling power over 1W and are mainly used as switches. This power semiconductor device has been developed with the goal of reducing power consumption and high breakdown voltage. This research was analyzed electrical characteristics of IGBT(Insulated Gate Biopolar Transistor) according to diffusion length of JFET region. The Diffusion length of JFET region was controlled by temperature and time using T-CAD simulator. As a result of experiments, we could obtain 1.14V low on state voltage drop by fixing 1440V breakdown voltage.

• Journal of IKEEE
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• v.14 no.4
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• pp.277-282
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• 2010

In this paper, we proposed ZnO trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, ZnO and SiC power devices is next generation power semiconductor devices. We carried out modeling of ZnO SIT with 2-D device and process simulator. As a result of modeling, we obtained 340V breakdown voltage. The channel thickness was 3um and the channel doping concentration is 1e17cm-3. And we carried out thermal characteristics, too.

• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.107-108
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• 2016

Solid State Transformer(SST) has been recently regarded as a good alternative to conventional low frequency transformer. SST is consist of several high voltage power stage, so it is important to select optimal semiconductor switches for specification. This paper presents optimal IGBT switches for low switching losses using analyzing switching characteristics of several high voltage IGBT switches. Double Pulse Tester(DPT) experiment is used to verify characteristics of this IGBT switches.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.3
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• pp.421-426
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• 2002

Hybrid cascade multilevel PWM inverter has advantages of hybrid structure which enhances the better utilization of power semiconductor switches, that is, both hi호 power-low frequency switch, GTO and low power-high frequency switch, IGBT can be used in the same circuit. In this paper, a static var compensator using hybrid cascade 5-level PWM inverter is presented for high voltage/high power applications. The proposed system is modelled by circuit DQ transformation, and thus an equivalent circuit is obtained which reveals the important characteristics of the system and lead to the related equations. Finally, circuit structure and characteristics is presented and the validity of the characteristics analysis is shown through PSIM simulation.

• Journal of Power Electronics
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• v.12 no.2
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• pp.268-275
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• 2012

Based on the standards that limit the harmonic pollution of electronic systems, the use of PFC converters is mandatory. In this paper, a new resonant bridgeless PFC converter is introduced. By eliminating the input bridge diodes, the efficiency is improved. Moreover, soft switching conditions for all of the semiconductor elements are achieved without adding any extra switches. As a result, high efficiency is attained. The proposed converter is analyzed and the theoretical and simulation results of the proposed converter are presented. In order to verify the validity of the analysis, a 40 w prototype converter is implemented and experimental results are presented. The experimental results show that high efficiency is attained while achieving a high power factor.

• Journal of Power Electronics
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• v.17 no.5
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• pp.1372-1381
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• 2017

This paper presents a high-side switch driver IC capable of improving the current sensing accuracy and providing reverse battery protection. Power semiconductor switches used to replace relay switches are encumbered by two disadvantages: they are prone to current sensing errors and they require additional external protection circuits for reverse battery protection. The proposed IC integrates a gate driver and current sensing blocks, thus compensating for these two disadvantages with a single IC. A p-sub-based 90-V $0.13-{\mu}m$ bipolar-CMOS-DMOS (BCD) process is used for the design and fabrication of the proposed IC. The current sensing accuracy (error ${\leq}{\pm}5%$ in the range of 0.1 A-6.5 A) and the reverse battery protection features of the proposed IC were experimentally tested and verified.

• Proceedings of the KSR Conference
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• 2008.06a
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• pp.1131-1136
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• 2008

The single-phase PWM converter employing power semiconductors is currently applied to the power unit of high-speed rail vehicle and increasingly used as the front-end converter with properties of near unity power factor. Power factor and harmonics are increasingly important needs for drive system of high-speed rail vehicle. The proposed approach has many advantages which include fewer semiconductor components, simplified control, high performance features and satisfies IEC 555 harmonic current standards. Simulation results show that the dc-link voltage control obey the reference value during constant load and input current is near sinusoidal.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.577-595
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• 2017

${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.102-103
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• 2007

The electrical characteristics of high power LIGBT implemented by CMOS process are described and compared with those of high voltage LDMOSFET with the same device dimensions. LIGBT has exhibited approximately 8 times superior current drive capability than LDMOSFET. The proposed p+/n+ anode structure resulted in the significant increase of on-state breakdown voltage of LIGBT. Therefore, LIGBT suggested in this paper is one of the promising candidate for smart power IC applications.