• ETRI Journal
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• v.35 no.3
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• pp.546-549
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• 2013

A Ka-band 6-W high power microwave monolithic integrated circuit amplifier for use in a very small aperture terminal system requiring high linearity is designed and fabricated using commercial 0.15-${\mu}m$ GaAs pHEMT technology. This three-stage amplifier, with a chip size of 22.1 $mm^2$ can achieve a saturated output power of 6 W with a 21% power-added efficiency and 15-dB small signal gain over a frequency range of 28.5 GHz to 30.5 GHz. To obtain high linearity, the amplifier employs a class-A bias and demonstrates an output third-order intercept point of greater than 43.5 dBm over the above-mentioned frequency range.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.50-56
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• 2022

In order to process a vast amount of data, there is demand for a new system with higher processing speed and lower energy consumption. To prevent 'memory wall' in von Neumann architecture, RRAM, which is a neuromorphic device, has been researched. In this paper, we summarize the features of RRAM and propose the device structure for characteristic improvement. RRAM operates as a synapse device using a change of resistance. In general, the resistance characteristics of RRAM are nonlinear and random. As synapse device, linearity and uniformity improvement of RRAM is important to improve learning recognition rate because high linearity and uniformity characteristics can achieve high recognition rate. There are many method, such as TEL, barrier layer, NC, high oxidation properties, to improve linearity and uniformity. We proposed a new device structure of TiN/Al doped TaO_x/AlO_x/Pt that will achieve high recognition rate. Also, with simulation, we prove that the improved properties show a high learning recognition rate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.790-794
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• 2003

This paper describes the fabrication and characteristics of ceramic thin film type pressure sensors based on Ta-N strain gauges for high temperature applications. Ta-N thin-film strain gauges are deposited onto a thermally oxidized Si diaphragm by RF sputtering in an argon-nitrogen atmos[here($N_2$ gas ratio: 8%, annealing condition: 90$0^{\circ}C$, 1 hr.), patterned on a wheatstone bridge configuration, and used as pressure sensing elements with a high stability and a high gauge factor. The sensitivity is 1.097 ～ 1.21 mV/Vㆍkgf/$\textrm{cm}^2$ in the temperature range of 25 ～ 200 $^{\circ}C$ and the maximum non-linearity resistance), non-linearity than existing Si piezoresistive pressure sensors. The fabricated ceramic thin-film type pressure sensor is expected to be usefully applied as pressure and load sensors that os operable under high-temperature.

• Journal of the Korean Institute of Telematics and Electronics
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• v.15 no.6
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• pp.87-90
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• 1978

In previous VFC type A/D converter high linearity charateristics knave been achieved to several hundred kHz, and in the converter with maximum output frequency of several MHz, the conversion linearity is poor in upper frequency range. In this paper the problem of the extension of the output frequency to MHz range is studied in the following two view points: First, a tunnel diode VCO is used to increase the output frequency range to several MHz. Second, the linearity between the input voltage and the frequency of the output pulse is accomplished by using negative pulse feedback circuit. From the experimental results, it was followed that the linearity of the proposed converter was about 0.209 percent at the frequency of 3.7MHz.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2002.11a
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• pp.377.2-377
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• 2002

In optical disk drives (ODD), the demands of high data density and high speed have been increasing rapidly to achieve high data capacity and data transfer rate The use of short wavelength laser and high track following performance are needed to raise data density and data rate. For high-performance actuator, the improvement of linearity and acceleration become more important. (omitted)

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.9
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• pp.870-877
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• 2009

This study provides how the Dimension Reduction (DR) method as an efficient technique for reliability analysis can acquire its increased efficiency when it is applied to highly nonlinear problems. In the highly nonlinear engineering systems, 4N+1 (N: number of random variables) sampling is generally recognized to be appropriate. However, there exists uncertainty concerning the standard for judgment of non-linearity of the system as well as possibility of diverse degrees of non-linearity according to each of the random variables. In this regard, this study judged the linearity individually on each random variable after 2N+1 sampling. If high non-linearity appeared, 2 additional sampling was administered on each random variable to apply the DR method. The applications of the proposed sampling to the examples produced the constant results with increased efficiency.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1162-1168
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• 2008

This study provides how the Dimension Reduction (DR) method as an efficient technique for reliability analysis can acquire its increased efficiency when it is applied to highly nonlinear problems. In the highly nonlinear engineering systems, 4N+1 (N: number of random variables) sampling is generally recognized to be appropriate. However, there exists uncertainty concerning the standard for judgment of non-linearity of the system as well as possibility of diverse degrees of non-linearity according to each of the random variables. In this regard, this study judged the linearity individually on each random variable after 2N+1 sampling. If high non-linearity appeared, 2 additional sampling was administered on each random variable to apply the DR method. The applications of the proposed sampling to the examples produced the constant results with increased efficiency.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.551-555
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• 2013

Linearity characteristics of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of high-k-only and $SiO_2$-only TFETs in terms of IIP3 and P1dB. It has been observed that the optimized HG TFETs have higher IIP3 and P1dB than high-k-only and $SiO_2$-only TFETs. It is because HG TFETs show higher transconductance ($g_m$) and current drivability than $SiO_2$-only TFETs and $g_m$ less sensitive to gate voltage than high-k-only TFETs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.456-459
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• 2002

This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097~1.21mV/$V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.2C
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• pp.191-199
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• 2006

In this paper, we propose a method to implement a predistorter of the $rho$-th order inverse filter structure to prevent signal distortion and spectral re-growth due to the high PAPR (peak-to-average ratio) of the OFDM signals and the non-linearity of high-power amplifiers. We model the memory-less non-linearity of the high-power amplifier with a polynomial model and utilize the inverse of the model, the $rho$-th order inverse filter, for the predistorter. Once the non-linearity is modeled with a polynomial, since we can determine the $rho$-th order inverse filter only with the coefficients of the polynomial, large memory is not required. To update the coefficients of the non-linear high-power amplifier model, we can use LMS or RLS algorithms. The convergence speed is high since the number of coefficients is small, and the computation is simple since manipulation of complex numbers is not necessary.