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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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A Ka-Band 6-W High Power MMIC Amplifier with High Linearity for VSAT Applications

  • Jeong, Jin-Cheol (Broadcasting & Telecommunications Media Research Laboratory, ETRI) ;
  • Jang, Dong-Pil (Broadcasting & Telecommunications Media Research Laboratory, ETRI) ;
  • Yom, In-Bok (Broadcasting & Telecommunications Media Research Laboratory, ETRI)
  • Received : 2012.09.14
  • Accepted : 2012.12.20
  • Published : 2013.06.01
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Abstract

A Ka-band 6-W high power microwave monolithic integrated circuit amplifier for use in a very small aperture terminal system requiring high linearity is designed and fabricated using commercial 0.15-${\mu}m$ GaAs pHEMT technology. This three-stage amplifier, with a chip size of 22.1 $mm^2$ can achieve a saturated output power of 6 W with a 21% power-added efficiency and 15-dB small signal gain over a frequency range of 28.5 GHz to 30.5 GHz. To obtain high linearity, the amplifier employs a class-A bias and demonstrates an output third-order intercept point of greater than 43.5 dBm over the above-mentioned frequency range.

Keywords

References

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