• ETRI Journal
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• 제35권3호
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• pp.546-549
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• 2013

A Ka-band 6-W high power microwave monolithic integrated circuit amplifier for use in a very small aperture terminal system requiring high linearity is designed and fabricated using commercial 0.15-${\mu}m$ GaAs pHEMT technology. This three-stage amplifier, with a chip size of 22.1 $mm^2$ can achieve a saturated output power of 6 W with a 21% power-added efficiency and 15-dB small signal gain over a frequency range of 28.5 GHz to 30.5 GHz. To obtain high linearity, the amplifier employs a class-A bias and demonstrates an output third-order intercept point of greater than 43.5 dBm over the above-mentioned frequency range.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.50-56
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• 2022

In order to process a vast amount of data, there is demand for a new system with higher processing speed and lower energy consumption. To prevent 'memory wall' in von Neumann architecture, RRAM, which is a neuromorphic device, has been researched. In this paper, we summarize the features of RRAM and propose the device structure for characteristic improvement. RRAM operates as a synapse device using a change of resistance. In general, the resistance characteristics of RRAM are nonlinear and random. As synapse device, linearity and uniformity improvement of RRAM is important to improve learning recognition rate because high linearity and uniformity characteristics can achieve high recognition rate. There are many method, such as TEL, barrier layer, NC, high oxidation properties, to improve linearity and uniformity. We proposed a new device structure of TiN/Al doped TaO_x/AlO_x/Pt that will achieve high recognition rate. Also, with simulation, we prove that the improved properties show a high learning recognition rate.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.790-794
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• 2003

This paper describes the fabrication and characteristics of ceramic thin film type pressure sensors based on Ta-N strain gauges for high temperature applications. Ta-N thin-film strain gauges are deposited onto a thermally oxidized Si diaphragm by RF sputtering in an argon-nitrogen atmos[here($N_2$ gas ratio: 8%, annealing condition: 90$0^{\circ}C$, 1 hr.), patterned on a wheatstone bridge configuration, and used as pressure sensing elements with a high stability and a high gauge factor. The sensitivity is 1.097 ～ 1.21 mV/Vㆍkgf/$\textrm{cm}^2$ in the temperature range of 25 ～ 200 $^{\circ}C$ and the maximum non-linearity resistance), non-linearity than existing Si piezoresistive pressure sensors. The fabricated ceramic thin-film type pressure sensor is expected to be usefully applied as pressure and load sensors that os operable under high-temperature.

• 대한전자공학회논문지
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• 제15권6호
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• pp.87-90
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• 1978

종래의 VFC type A/D Converter에서는 출력주파수가 수 100KHz까지는 linearity가 좋았으나 출역주파수가 높아 질수록 linearity error가 증가하였기 때문에 본 연구에서는 출력주파수 영역을 수 MHz까지 넓히기 위해서 tunnel diode voltage controlled oscillator를 사용하였고 입력전압과 출력주파수 사이에 linearity를 개선하기 위하여 negative feedback 회로를 사용하였다. 실험 결과에 의하면 제안된 VFC type A/D converter의 linearity는 최고 출력주파수 3.7MHz까지 0.209%이었다.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2002년도 추계학술대회논문초록집
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• pp.377.2-377
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• 2002

In optical disk drives (ODD), the demands of high data density and high speed have been increasing rapidly to achieve high data capacity and data transfer rate The use of short wavelength laser and high track following performance are needed to raise data density and data rate. For high-performance actuator, the improvement of linearity and acceleration become more important. (omitted)

• 대한기계학회논문집A
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• 제33권9호
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• pp.870-877
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• 2009

This study provides how the Dimension Reduction (DR) method as an efficient technique for reliability analysis can acquire its increased efficiency when it is applied to highly nonlinear problems. In the highly nonlinear engineering systems, 4N+1 (N: number of random variables) sampling is generally recognized to be appropriate. However, there exists uncertainty concerning the standard for judgment of non-linearity of the system as well as possibility of diverse degrees of non-linearity according to each of the random variables. In this regard, this study judged the linearity individually on each random variable after 2N+1 sampling. If high non-linearity appeared, 2 additional sampling was administered on each random variable to apply the DR method. The applications of the proposed sampling to the examples produced the constant results with increased efficiency.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1162-1168
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• 2008

This study provides how the Dimension Reduction (DR) method as an efficient technique for reliability analysis can acquire its increased efficiency when it is applied to highly nonlinear problems. In the highly nonlinear engineering systems, 4N+1 (N: number of random variables) sampling is generally recognized to be appropriate. However, there exists uncertainty concerning the standard for judgment of non-linearity of the system as well as possibility of diverse degrees of non-linearity according to each of the random variables. In this regard, this study judged the linearity individually on each random variable after 2N+1 sampling. If high non-linearity appeared, 2 additional sampling was administered on each random variable to apply the DR method. The applications of the proposed sampling to the examples produced the constant results with increased efficiency.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.551-555
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• 2013

Linearity characteristics of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of high-k-only and $SiO_2$-only TFETs in terms of IIP3 and P1dB. It has been observed that the optimized HG TFETs have higher IIP3 and P1dB than high-k-only and $SiO_2$-only TFETs. It is because HG TFETs show higher transconductance ($g_m$) and current drivability than $SiO_2$-only TFETs and $g_m$ less sensitive to gate voltage than high-k-only TFETs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.456-459
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• 2002

This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097~1.21mV/$V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• 한국통신학회논문지
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• 제31권2C호
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• pp.191-199
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• 2006

본 논문에서는 OFDM 신호의 높은 PAPR과 전력 증폭기의 비선형성에 의한 신호의 왜곡과 스펙트럼의 확산을 방지하기 위하여 $rho$차 역필터 구조를 사용하는 전치 보상기를 구현하는 방안을 제시한다. 메모리가 없는 고전력 증폭기를 다항식으로 모델링 하고 전치 보상기로써 비선형 증폭기 특성의 역모델인 $rho$차 역필터 구조를 이용한다. $rho$차 역필터 구조는 비선형 시스템이 다항식으로 모델링 된다면 다항식의 계수만으로 구현될 수 있으므로 많은 메모리가 필요 없다. 비선형 전력 증폭기 모델의 계수 갱신을 위하여는 LMS, RLS 알고리듬을 모두 사용할 수 있으며 계수의 개수가 적어 수렴 속도가 빠르고 복소 계산이 필요 없으므로 계산도 간단하다.