• Korean Journal of Materials Research
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• v.3 no.2
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• pp.111-120
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• 1993

Abstract In this study, the Mo-Hf-O ingots containing 0.31-1.14at % Hf and 0.08-1.00at % 0 were prepared by plasma arc melting. The change of microstructure depending on the condition of heat treatmen~ was analysed by optical microscophy, auger electron microscophy, and transmission electron microscophy. Molybdenum powder with the oxygen content of 830ppm was compacted, and then melted. The oxygen content of molybdenum ingots was detected to be 40 -130ppm. As the contents of Hf and 0 increased, the grain size of ingots decreased. When molybdenum igot containing l.14at % Hf and 1.00at % C was heat treated, p-molybdenum carbide in grains was transformed into ${\alpha}$-molybdenum carbide at 130$0^{\circ}C$. Between 140$0^{\circ}C$ and 150$0^{\circ}C$, the precipitation of hafnium carbide was due to the reaction of solute Hf and C, and the hafnium carbide was saturated at grain boundaries at 150$0^{\circ}C$. When the sample was heat treated from 150$0^{\circ}C$ to 170$0^{\circ}C$, Hafnium oxide more stable thermodynamically precipitated both at grain boundaries and in grains after hafnium carbide had been dissolved at grain boundaries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.127-128
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• 2008

The electrical characteristics of VARIOT (variable oxide thickness) with various $HfO_2$ thicknesses on thin $SiO_2$ or $Al_2O_3$ layer were investigated. Especially, the charge trapping characteristics of $HfO_2$ layer were intensively studied. The thin $HfO_2$ layer has small charge trapping characteristics while the thick $HfO_2$ layer has large memory window. Therefore, the $HfO_2$ layer is superior material and can be applied to charge storage as well as tunneling barrier of the non-volatile memory applications.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.145-146
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• 2002

Metal-Oxide-Semiconductor Field Effect Transistor(MOSFET)의 게이트 유전체로서 실리콘 산화막($SiO_2$)은 두께가 1.5nm 이하로 낮아질 경우 터널링 전류가 증가하여 누설 전류가 증가하게 된다. 이로 인해 사용 전력이 증가하게 되고, 소자의 성능을 떨어뜨리게 된다. 본 논문은 높은 유전상수와 넓은 에너지 밴드 갭을 갖는 $HfO_2$를 RF Magnetron Sputter를 이용하여 증착한 다음 RTA 열처리를 통하여 HfSixOy를 생성하여 전기적 특성을 측정하였다. 실험결과, 열처리 시간이 증가함에 따라 HfSixOy의 분포가 균일해지는 반면 두께가 얇아져서 누설 전류가 증가 하는 것으로 관찰되었다. $HfO_2$를 게이트 유전막으로 증착하였을 경우 $HfO_2/HfSixOy/Si$의 이중 박막 구조가 생겨 유전상수를 떨어뜨리는 반면, 실리콘 기판과 우수한 계면 특성을 갖는 HfSixOy만을 증착할 경우 양질의 단층 게이트 유전막으로 활용가능 할 것으로 사료된다.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.63.2-64
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• 2003

Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

• Journal of IKEEE
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• v.25 no.4
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• pp.770-773
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• 2021

In this paper, the retention characteristics of 3D NAND flash memory applied with tapering and ferroelectric (HfO₂) structure were analyzed after programming operation. Electrons trapped in nitride are affected by lateral charge migration over time. It was confirmed that more lateral charge migration occurred in the channel thickened by tapering of the trapped electrons. In addition, the Oxide-Nitride-Ferroelectric (ONF) structure has better lateral charge migration due to polarization, so the change in threshold voltage (V_th) is reduced compared to the Oxide-Nitride-Oxide (ONO) structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.24-25
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• 2008

The effect of heat treatment in $HfO_2$ as charge trap with $SiO_2/Si_3N_4/SiO_2$ as tunnel oxide layer in capacitors has been investigated. Rapid thermal annealing (RTA) were carried out at the temperature range of 600 - $900^{\circ}C$. It is found that all devices carried out heat treatment have large threshold voltage shift Especially, device performed heat treatment at $900^{\circ}C$ has been confirmed the largest memory window. Also, Threshold voltage shift of device used conventional $SiO_2$ as tunnel oxide layer was smaller than that with $SiO_2/Si_3N_4/SiO_2$.

• Journal of the Semiconductor & Display Technology
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• v.10 no.3
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• pp.15-19
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• 2011

The performance of the DRAM is strongly dependent on the purity and surface roughness of the TIT (TiN/Insulator/ TiN) capacitor electrodes. Hence, in the present study, we evaluate the effects of organic contamination and change of surface roughness on the cylindrical TIT capacitor electrodes during the wet cleaning process by various analytical techniques such as TDMS, AFM, XRD and V-SEM. Once the sacrificial oxide and PR (Photo Resist) are removed by HF, the organic contamination and surface oxide films on the bottom Ti/TiN electrode become visible. With prolonged HF process, the surface roughness of the electrode is increased, whereas the amount of oxidized Ti/TiN is reduced due to the HF chemicals. In the 80nm DRAM device fabrication, the organic contamination of the cylindrical TIT capacitor may cause defects like SBD (Storage node Bridge Defect). The SBD fail bit portion is increased as the surface roughness is increased by HF chemicals reactions.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.14-21
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• 2010

Ge is one of the attractive channel materials for the next generation high speed metal oxide semiconductor field effect transistors (MOSFETs) due to its higher carrier mobility than Si. But the absence of a chemically stable thermal oxide has been the main obstacle hindering the use of Ge channels in MOS devices. Especially, the fabrication of gate oxide on Ge with high quality interface is essential requirement. In this study, $HfO_xN_y$ thin films were prepared by plasma-enhanced atomic layer deposition on Ge substrate. The nitrogen was incorporated in situ during PE-ALD by using the mixture of nitrogen and oxygen plasma as a reactant. The effects of nitrogen to oxygen gas ratio were studied focusing on the improvements on the electrical and interface properties. When the nitrogen to oxygen gas flow ratio was 1, we obtained good quality with 10% EOT reduction. Additional analysis techniques including X-ray photoemission spectroscopy and high resolution transmission electron microscopy were used for chemical and microstructural analysis.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.30-36
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• 2009

The effects of $HfO_2$ film thickness on electrical, optical, and structural properties were investigated. We fabricated ITO/$HfO_2$/ITO metal-insulator- metal (MIM) capacitor using transparent conducting oxide. When $HfO_2$ film thickness increase from 50 nm to 300 nm, dielectric constant of $HfO_2$ was decreased from 20.87 to 9.72. The transparent capacitor shows an overall high performance, such as a dielectric constant about 21 by measuring the ITO/$HfO_2$/ITO capacitor structures and a low leakage current of $2.75{\times}10^{-12}\;A/cm^2$ at +5 V. Transmittance above 80% was observed in visible region.