• Title/Summary/Keyword: Half-bridge driver IC

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Design of a Robust Half-bridge Driver IC to a Variation of Process and Power Supply (공정 및 공급전압 변화에 강인한 하프브리지 구동 IC의 설계)

  • Song, Ki-Nam;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Jang, Kyung-Oun;Han, Seok-Bung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.10
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    • pp.801-807
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    • 2009
  • In this paper, we propose a novel shoot-through protection circuit and pulse generator for half-bridge driver IC. We designed a robust half-bridge driver IC over a variation of processes and power supplies. The proposed circuit is composed a delay circuit using a beta-multiplier reference. The proposed circuit has a lower variation rate of dead time and pulse-width over variation of processes and supply voltages than the conventional circuit. Especially, the proposed circuit has more excellent pulse-width matching of set and reset signals than the conventional circuit. Also, the proposed pulse generator is prevented from fault operations using a logic gate. Dead time and pulse-width of the proposed circuit are typical 250 ns, respectively. The variation ratio is 68%(170 ns) of maximum over variation of processes and supply voltages. The proposed circuit is designed using $1\;{\mu}m$ 650 V BCD (Bipolar, CMOS, DMOS) process parameter, and the simulations are carried out using Spectre simulator of Cadence corporation.

High Voltage Driver IC for LCD/PDP TV Power Supply (LCD/PDP TV 전원장치용 고전압 구동 IC)

  • Song, Ki-Nam;Lee, Yong-An;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Han, Seok-Bung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.11-12
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    • 2009
  • In this paper, we propose a high voltage driver IC(HVIC) for LCD and PDP TV power supply. The proposed circuit is included novel a shoot-through protection and a pulse generation circuit for the high voltage driver IC. The proposed circuit has lower variation of dead time and pulse-width about a variation of a process and a supply voltage than a conventional circuit. Especially, the proposed circuit has more excellent pulse-width matching of set and reset signals than the conventional circuit. Also the proposed pulse generation circuit prevent from fault operations using a logic gate. Dead time and pulse-width of the proposed circuit are typical 250 ns, and its variation is maximum 170 ns(68 %) about a variation of a process and a supply voltage. The proposed circuit is designed using $1\;{\mu}m$ 650 V BCD process parameter, and a simulation is carried out using Spectre.

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Design of the Driver IC for 500 V Half-bridge Converter using Single Ended Level Shifter with Large Noise Immunity (잡음 내성이 큰 단일 출력 레벨 쉬프터를 이용한 500 V 하프브리지 컨버터용 구동 IC 설계)

  • Park, Hyun-Il;Song, Ki-Nam;Lee, Yong-An;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Han, Seok-Bung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.8
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    • pp.719-726
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    • 2008
  • In this paper, we designed driving IC for 500 V resonant half-bridge type power converter, In this single-ended level shifter, chip area and power dissipation was decreased by 50% and 23.5% each compared to the conventional dual-ended level shifter. Also, this newly designed circuit solved the biggest problem of conventional flip-flop type level shifter in which the power MOSFET were turned on simultaneously due to the large dv/dt noise. The proposed high side level shifter included switching noise protection circuit and schmmit trigger to minimize the effect of displacement current flowing through LDMOS of level shifter when power MOSFET is operating. The designing process was proved reasonable by conducting Spectre and PSpice simulation on this circuit using 1${\mu}m$ BCD process parameter.

Design of High Voltage Gate Driver IC with Minimum Change and Variable Characteristic of Dead Time (최소 변동 및 가변 데드 타임을 갖는 고전압 구동 IC 설계)

  • Mun, Kyeong-Su;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Cho, Hyo-Mun;Cho, Sang-Bock
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.12
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    • pp.58-65
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    • 2009
  • In this paper, we designed high voltage gate drive IC including dead time circuit in which capacitors controlled rising time and falling time, and schimitt-triggers controlled switching voltage. Designed High voltage gate drive IC improves an efficiency of half-bridge converter by decreasing dead time variation against temperature and has variable dead time by the capacitor value. and its power dissipation, which is generated on high side part level shifter, has decreased 52 percent by short pulse generation circuit, and UVLO circuit is designed to prevent false-operation. We simulated by using Spectre of Cadence to verify the proposed circuit and fabricated in a 1.0um process.

Zero Voltage Switching(ZVS) Dual Half-Bridge Inverter with Wide Input Voltage Range for LCD Backlight Driver (넓은 범위의 ZVS동작을 갖는 LCD Backlight 구동용 Dual Half Bridge Inverter)

  • Jung, Young-Jin;Han, Sang-Kyoo;Roh, Chung-Wook;Hong, Sung-Soo;SaKong, Suk-Chin;Kwon, Gi-Hyun;Lee, Hyo-Bum
    • Proceedings of the KIPE Conference
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    • 2007.07a
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    • pp.144-146
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    • 2007
  • 본 논문에서는 고효율 LCD Backlight 구동을 위해 주로 사용하던 Phase shift Full bridge 방식을 대신할 수 있는 Dual Half Bridge Inverter를 제안하였다. 제안된 회로는 일반적인 Push-Pull 인버터 구동용 제어 IC의 출력 신호 2개로 스위치 4개를 제어할 수 있으며 넓은 범위의 ZVS(zero voltage switching)을 보장하여 소자 발열 및 효율 상승의 이점을 가진다. 제안된 Inverter Topology를 소개하며 동작모드 해석과 시뮬레이션 및 실험을 통한 검증결과를 제시 한다.

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Cost Effective Plasma Display Panel TV Driving system with an address misfiring compensation circuit (어드레스 오방전 보상 저가형 플라즈마 디스플레이 패널 TV 구동 시스템)

  • Yi, Kang Hyun;Lee, Dae Sik
    • Journal of Korea Society of Industrial Information Systems
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    • v.18 no.3
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    • pp.1-8
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    • 2013
  • Plasma display panel (PDP) televisions are facing to have a new chance to receive attention along with a boom in 3-D software and contents because PDP can provide the comfortable and realistic 3-D images. The PDP has three driving circuit boards such as X, Y and addressing boards. Cost effective driving waveform has already been reported to decrease the number of driving circuit board. Half bridge based sustaining driver can remove a sustaining driver in the X board. However, the biasing circuit in the X driving boards cannot be reduced because there are some drawbacks such as unstable gas discharge condition and unreliability of an address driver IC. In this paper, the half bridge based sustaining driver is considered and a simple address driver is proposed to remove one driving board, X driving board. The stable gas discharge condition, reliability of the address driver IC and the low cost can be obtained by the proposed circuit.

Design of the Noise Margin Improved High Voltage Gate Driver IC for 300W Resonant Half-Bridge Converter (잡음 내성이 향상된 300W 공진형 하프-브리지 컨버터용 고전압 구동 IC 설계)

  • Song, Ki-Nam;Park, Hyun-Il;Lee, Yong-An;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Han, Seok-Bung
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.10
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    • pp.7-14
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    • 2008
  • In this paper, we designed the HVIC(High Voltage Gate Driver IC) which has improved noise immunity characteristics and high driving capability. Operating frequency and input voltage range of the designed HVIC is up to 500kHz and 650V, respectively. Noise protection and schmitt trigger circuit is included in the high-side level shifter of designed IC which has very high dv/dt noise immunity characteristic(up to 50V/ns). And also, rower dissipation of high-side level shifter with designed short-pulse generation circuit decreased more that 40% compare with conventional circuit. In addition, designed HVIC includes protection and UVLO circuit to prevent cross-conduction of power switch and sense power supply voltage of driving section, respectively. Protection and UVLO circuit can improve the stability of the designed HVIC. Spectre and Pspice circuit simulator were used to verify the operating characteristics of the designed HVIC.

Design of the High Voltage Gate Driver IC for 300W Half-Bridge Converter Using $1{\mu}m$ BCD 650V process ($1{\mu}m$ BCD 650V 공정을 이용한 300W 하프-브리지 컨버터용 고전압 구동IC의 설계)

  • Song, Ki-Nam;Park, Hyun-Il;Lee, Yong-An;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Han, Seok-Bung
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.463-464
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    • 2008
  • As the demands of LCD and PDP TV are increasing, the high performance HVICs(High Voltage Gate Driver ICs) technology is becoming more necessary. In this paper, we designed the HVIC that has enhanced noise immunity and high driving capability. It can operate at 500KHz switching frequency and permit 600V input voltage. High-side level shifter is designed with noise protection circuit and schmitt trigger. Therefore it has very high dv/dt immunity, the maximum being 50V/ns. The HVIC was designed using $1{\mu}m$ BCD 650V process and verified by Spectre and PSpice of Cadence inc. simulation.

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