• Title/Summary/Keyword: Half-Plane

Search Result 453, Processing Time 0.025 seconds

HVPE growth of GaN/InGaN heterostructure on r-plane sapphire substrate (R-plane 사파이어 기판위의 GaN/InGaN 이종접합구조의 HVPE 성장)

  • Jeon, H.S.;Hwang, S.L.;Kim, K.H.;Jang, K.S.;Lee, C.H.;Yang, M.;Ahn, H.S.;Kim, S.W.;Jang, S.H.;Lee, S.M.;Park, G.H.;Koike, M.
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.17 no.1
    • /
    • pp.6-10
    • /
    • 2007
  • The a-plane GaN layer on r-plane $Al_2O_3$ substrate is grown by mixed-source hydride vapor phase epitaxy (HVPE). The GaN/InGaN heterostructure is performed by selective area growth (SAG) method. The heterostructure consists of a flown over mixed-sourec are used as gallium (or indium) and nitrogen sources. The gas flow rates of HCl and $NH_3$ are maintained at 10 sccm and 500 sccm, respectively. The temperatures of GaN source zone is $650^{\circ}C$. In case of InGaN, the temperature of source zone is $900^{\circ}C$. The grown temperatures of GaN and InGaN layer are $820^{\circ}C\;and\;850^{\circ}C$, respectively. The EL (electroluminescence) peak of GaN/InGaN heterostructure is at nearly 460 nm and the FWHM (full width at half maximum) is 0.67 eV. These results are demonstrated that the heterostructure of III-nitrides on r-plane sapphire can be successfully grown by mixed-source HVPE with multi-sliding boat system.

non-polar a-plane GaN growth on r-plane sapphire substrate by MOCVD

  • Son, Ji-Su;Baek, Kwang-Hyun;Kim, Ji-Hoon;Song, Hoo-Young;Kim, Tae-Geun;Hwang, Sung-Min
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2010.08a
    • /
    • pp.229-229
    • /
    • 2010
  • We report a high crystalline nonpolar a-plane (11-20) GaN on r-plane (1-102) sapphire substrates with $+0.15^{\circ}$, $-0.15^{\circ}$, $+0.2^{\circ}$, $-0.2^{\circ}$ and $+0.4^{\circ}$ misoriented by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 5 periods the nonpolar a-plane InGaN/GaN (a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN layers with double crystal x-ray diffraction. The FWHM values of $+0.4^{\circ}$ misoriented sapphire substrate were decreased down to 426 arc sec for $0^{\circ}$ and 531 arc sec for $-90^{\circ}$, respectively. Also, the samples were characterized by photoluminescence (PL).

  • PDF

Modelling of magneto-thermoelastic plane waves at the interface of two prestressed solid half-spaces without energy dissipation

  • Kakar, Rajneesh;Kakar, Shikha
    • Earthquakes and Structures
    • /
    • v.8 no.6
    • /
    • pp.1299-1323
    • /
    • 2015
  • A model for reflection and refraction of magneto-thermoelastic SV-waves at the interface of two transversely isotropic and homogeneous solid half spaces under initial stress by applying classical dynamical theory of thermoelasticity is purposed. The reflection and refraction coefficients of SV-waves are obtained with ideal boundary conditions for SV-wave incident on the solid-solid interface. The effects of magnetic field, temperature and initial stress on the amplitude ratios after numerical computations are shown graphically with MATLAB software for the particular model.

A Study On the Frequency Characteristic of the HBPSRC (하프 브릿지 병렬-직렬 공진형 컨버터의 주파수 특성에 관한 연구)

  • 차인수;박해암
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
    • /
    • 1992.11a
    • /
    • pp.51-55
    • /
    • 1992
  • By using the state plane approach, the steady state analysis and design of a half bridge parallel-series (LLC-type) resonant converter (HBPSRC) operating in the continous conduction made is presented. The state-plane diagram representation of the converter response gives good insight into the converter operation. Based on this analysis, a set of steady state characteristic waves for HBPSRC is presented. A simple design procedure is given and design example for a 100watts, 30KHz HBPSRC is presented for illustrative purposes.

  • PDF

AREA OF TRIANGLES ASSOCIATED WITH A CURVE

  • Kim, Dong-Soo;Shim, Kyu-Chul
    • Bulletin of the Korean Mathematical Society
    • /
    • v.51 no.3
    • /
    • pp.901-909
    • /
    • 2014
  • It is well known that the area U of the triangle formed by three tangents to a parabola X is half of the area T of the triangle formed by joining their points of contact. In this article, we study some properties of U and T for strictly convex plane curves. As a result, we establish a characterization for parabolas.

Transflective Liquid Crystal Display of In-Plane Switching (IPS), Using Patterned Retarder on the Side of the Upper Substrate

  • Hong, Hyung-Ki;Shin, Hyun-Ho
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2006.08a
    • /
    • pp.822-825
    • /
    • 2006
  • We propose a transflective In-Plane Switching mode in which patterned retarder is placed only on the reflective area of the upper substrate side. By selecting optic axes of Half Wavelength Plate and Liquid Crystal as 24 and 90 degree with respect to polarizer, condition of low reflectance for visible wavelength range at black state is found.

  • PDF

Printed Type Half-wavelength Small Loop Antenna (프린트형 반파장 소형 루프 안테나)

  • Ryu, Hong-Kyun;Woo, Jong-Myung
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
    • /
    • 2005.11a
    • /
    • pp.245-248
    • /
    • 2005
  • In this paper, small sized half-wavelength circular loop antenna which attached beneath a visor of helmet is designed and fabricated at the resonant frequency of 449MHz. To reduce the size of the antenna, double series-shorted stubs are inserted inside the loop for practical use of a vacant space of loop inside. Also, It is designed for the printed type to install the helmet easily. The size of antenna on helmet is reduced to 87.75%(diameter : 70mm, height :.36mm) compare with general type antenna(diameter : 200mm height 101mm). The return loss, -10dB bandwidth and gain are -13.2dB, 17.6MHz(3.9%), and -1.78dBd. And, radiation pattern is omni-directional pattern at H-plane. Therefore, it can be seen that the half-wavelength circular loop antenna using double series-shorted stubs is proper structure for the miniaturization and the installed antenna of the helmet.

  • PDF

Effect of fractional order on energy ratios at the boundary surface of elastic-piezothermoelastic media

  • Kumar, Rajneesh;Sharma, Poonam
    • Coupled systems mechanics
    • /
    • v.6 no.2
    • /
    • pp.157-174
    • /
    • 2017
  • In the present investigation reflection and transmission of plane waves at an elastic half space and piezothermoelastic solid half space with fractional order derivative is discussed. The piezothermoelastic solid half space is assumed to have 6 mm type symmetry and assumed to be loaded with an elastic half space. It is found that the amplitude ratios of various reflected and refracted waves are functions of angle of incidence, frequency of incident wave and are influenced by the piezothermoelastic properties of media. The expressions of amplitude ratios and energy ratios are obtained in closed form. The energy ratios are computed numerically using amplitude ratios for a particular model of graphite and Cadmium Selenide (CdSe). The variations of energy ratios with angle of incidence are shown graphically. The conservation of energy across the interface is verified. Some cases of interest are also deduced from the present investigation.