• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.147-147
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• 2011

High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.390-396
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• 2009

The present research was focused to investigate the quality of non-polar SiC substrates grown by a conventional PVT method for optoelectronic applications. The half part of the PVT-grown 6H-SiC crystal boules was sliced along a-direction and m-direction to extensively analyze non-polar planes and then remaining part of that was sliced along the basal plane to produce wafers. The non-polar SiC m-plane and a-plane exhibited apparent peaks around 2 theta=$120^{\circ}$((3-300) plane) and 2 theta=$60^{\circ}$ ((11-20) plane), respectively. FWHM values of m-plane measured along a-direction and c-direction were 60 arc see and 57 arcsec respectively, a-plane measured along m-direction and c-direction were 41 arcsec and 51 arcsec respectively. The typical absorption spectra of SiC crystals indicated that each of SiC crystals were the 6H-SiC with fundamental absorption energy of about 3.04 eV. Non-polar planes contained no micropipe on etched surface. The carrier concentration and mobility of non-polar SiC wafers have estimated by Raman spectrum. It was observed that the carrier mobility is low in the area far from seed crystal with compared to other places.

• 전자공학회논문지
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• 제50권6호
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• pp.43-55
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• 2013

본 논문에서는 원통형태의 배열구조에서 수평면(H-plane), 수직면(E-Plane) 빔조향 특성을 갖는 원통형 능동위상배열 안테나를 제안하였다. 상호결합특성이 우수한 접힌 다이폴 안테나를 원통의 배열구조에 적합하도록 설계하고, 수직과 수평으로 $8{\times}8$ 원통 배열구조를 갖는 지향성 배열안테나와 전력 분배를 위한 결합분배기를 설계 및 제작하였다. 원통배열 안테나의 복사소자 배열 간격은 반전력 빔폭과 빔 조향 시 그레이팅로브가 발생하지 않도록 결정하였다. 안테나의 빔 조향은 송수신장치 내부의 6비트 위상변위기를 이용하여 구현하였으며, 안테나 빔조향 시 수평면으로 -24도 ~ 24도, 수직면 기준으로 0도 ~ 36도의 빔조향 특성을 갖도록 고안되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.146-146
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• 2011

The blue light emitting diode (LED) structure based on non-polar a-plane (11-20) GaN which was coated TiO2 nanoparticles using spin coating method was grown on r-plane (1-102) sapphire substrates to improve light extraction efficiency. We report on the emission and structural properties with temperature dependence of photoluminescence (PL) and x-ray rocking curves (XRC). From PL results at 13 K of undoped GaN samples, basal plane stacking fault (BSF) and near band edge (NBE) emission peak were observed at 3.434 eV and 3.484 eV, respectively. We also found the temperature-induced band-gap shrinkage, which was fitted well with empirical Varshini's equation. The PL intensity of TiO2 nanoparticles ?coated multiple quantum well (MQW) sample is decayed slower than that of no coating sample with increasing temperature. The anisotrophic strain and azimuth angle dependence in the films were shown from XRC results. The full width at half maximum (FWHM) along the GaN [11-20] and [1-100] directions were 564.9 arcsec and 490.8 arcsec, respectively. A small deviation of FWHM values at in-plane direction is attributed to uniform in-plane strain.

• 대한치과보철학회지
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• 제41권5호
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• pp.640-655
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• 2003

Statement of problem : The beauty has a little different meaning according to a time, culture, and nation. Purpose : This study was undertaken to determine the Korean perception of the altered upper anterior dental esthetics including the lack of symmetry, the midline deviation, the gingival exposure, the inclination of incisal plane, the type of incisal plane, and the type of gingival line. Material and Method : 670 subjects were participated in this survey. A questionnaire accompanied by 12 sets of computer-manipulated images using 3D MAX 4.2 software was used to record the ranking of the geometric preference related to the anterior esthetic discrepancies in three or four degrees of alteration. The statistical significance of the differences between the groups was determined by a one-way ANOVA and a t-test. Results : The results obtained were as follows: 1) The Korean perception of the anterior dental esthetics according to the subjects' occupation, sex, and age was most affected by occupation. 2) The masked image emphasizing the dentition and lips appeared stranger than the non-masked image at the same alteration. 3) The lack of symmetry, which was expressed as a unilateral discoloration of the tooth, showed incongruity in any teeth of the anterior dentition. The incongruity was more severe as the degree occurred closer to the midline. 4) The deviation of midline was showed more severe strangeness as the degree of deviation increased. However, more than half of the subjects did not perceive a deviation of 5mm. 5) During smiling, the exposure of the upper gingiva showed more severe incongruity as the degree of gingival exposure increased. 77% of the subjects perceived strangeness at the gingival exposure of 4.5mm. 6) The inclination of the incisal plane appeared stranger as the degree of inclination increased. 62% of subjects perceived strangeness at the $7.5^{\circ}$ inclination of the incisal plane. 7) The type of incisal plane showed increasing strangeness in the order of convex/downward, straight/horizontal, and concave/upward. 80% of subjects perceived strangeness at concave/upward. 8) The type of gingival line was showed increasing incongruity in the order of the same, a little above, and a little under the zenith of the lateral incisor to the line joining the zenith of the central incisor and the canine. However, less than half the subjects did not perceive strangeness at any alteration of the gingival line. Conclusion : The Korean perception of the upper anterior dental esthetics was different to the westerner's perception in the some respects.

• 한국자기학회지
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• 제17권4호
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• pp.147-151
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• 2007

호이슬러 구조를 가진 반쪽금속 $Co_2$ZrSi와 반도체인 ZnTe이 (001)면을 따라 계면을 이루었을 때 전자구조, 자성 및 반쪽금속성을 총 퍼텐셜 선형보강평면파동(FLAPW) 방법을 이용하여 이론적으로 연구하였다. 모두 4가지 가능한 계면, 즉 ZrSi/Zn, ZrSi/Te, Co/Zn와 Co/Te을 고려하였다. 계산된 상태밀도로부터 4가지 계면에서 모두 반쪽금속성이 깨어졌음을 알 수 있었으나 Co/Te의 경우 페르미에너지에서 소수 스핀 상태밀도의 값은 영에 가까웠다. 계면에서 반쪽금속성이 파괴되는 것은 계면에서 원자들의 좌표수와 대칭성이 덩치상태와 달라지고 계면전자들 사이의 띠 혼성에 의해 덩치 $Co_2$ZrSi의 소수 스핀 띠간격에 계면상태들이 나타났기 때문이다. Co/Te의 계면에서 Co원자의 자기모멘트의 값은 "bridge"와 "antibridge" 위치에서 각각 0.68과 $0.78{\mu}_B$로서 이는 덩치 Co경우의 값($1.15{\mu}_B$)에 비하여 크게 감소한 것이다. Co/Zn에서 "bridge"와 "antibridge" 위치에 있는 Co원자의 자기모멘트는 각각 1.16과 $0.93{\mu}_B$의 값을 가졌다. 반면 ZrSi/Zn와 ZrSi/Te의 경우 계면 바로 밑층의 Co원자들은 $1.13{\sim}1.30\;{\mu}_B$ 사이의 자기모멘트를 가졌는데 이는 덩치 $Co_2$ZrSi에서의 값과 비슷하거나 약간 증가한 값이다.

• 한국결정성장학회지
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• 제25권2호
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• pp.56-61
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• 2015

Ga source 채널의 HCl flow가 700 sccm, 그리고 V/III족 비가 10으로 고정되었을 때, r-면 사파이어 위에 HVPE로 성장된 a-면 GaN 에피층 특성에 대한 성장 온도 영향을 연구하였다. 추가적으로 성장온도가 $1000^{\circ}C$, 그리고 Ga source 채널의 HCl flow가 700 sccm으로 고정되었을 때, 공급가스에 대한 V/III족 비 영향에 대하여 연구하였다. 성장온도가 높아지면서, a-면 GaN 에피층에 대한 (11-20) 면의 Rocking curve(RC)의 반치폭 값이 감소하였고 a-면 GaN 에피층의 성장두께는 증가하였다. $1000^{\circ}C$에서 V/III족 비가 높아짐에 따라, (11-20) 면의 RC의 반치폭 값이 감소하였고, a-면 GaN 에피층의 성장두께가 증가하였다. $1000^{\circ}C$와 V/III족 비=10에서 성장된 a-면 GaN 에피층이 (11-20) 면에서 가장 낮은 RC 반치폭인 734 arcsec을 보이며, RC측정을 통한 (11-20) 면의 방위각 가장 작은 영향을 보여준다.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1999년도 제29회 춘계학술대회
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• pp.38-46
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• 1999

Numerical methods are procured for evaluating the contact stresses, the dissipation of friction energy density and the fatigue cracking emanated from the contact surface under the partial slip condition. A rounded punch is used for the indenter pressing and slipping on the elastic half plane. Plane strain condition is assumed for the present analysis. Several sample calculations are carried out to investigate the effect of the punch roundness, the shear load path, and the crack obliquity and closure on the failure. It is found that the present methods can be a useful tool for studying the physical failure of the of the contacting materials such as fretting wear and fretting fatigue cracking.

• The Journal of the Acoustical Society of Korea
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• 제17권3E호
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• pp.35-42
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• 1998

Transient acoustic and elastic wave propagation in inhomogeneous media are studied by using the Fourier method. It is known that the fourier method has advantages in memory requirements and computing speed over conventional methods such as FDM and FEM, because the Fourier method needs less grid points for achieving the same accuracy. To verify the proposed numerical scheme, several examples having analytic solutions are considered, where two different semi-infinite media are in contact along a plane boundary. The comparisons of numerical results by the Fourier method and analytic solutions show good agreements. In addition, the fourier method is applied to a layered half-plane, in which an elastic semi-infinite medium is covered by an elastic layer of finite thickness. It is showed how to derive the analytic solutions by using the Cagniard-de Hoop method. The numerical solutions are in excellent agreements with analytic results.

• 한국세라믹학회지
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• 제42권9호
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• pp.599-601
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• 2005

The coarsening process of two different $BaTiO_3$ single crystal seeds, one with a (111) double twin and the other without it, was investigated. Due to the presence of Twin Plane Reentrant Edge (TPRE), the coarsening rate of the twinned seed crystal was significantly higher than that without a twin. For the coarsening by the 2-dimensional nucleation and lateral growth, the energy barrier for nucleation at the TPRE was analyzed to be about a half compared with that at the terrace planes.