• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.60-60
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• 2002

• 한국재료학회지
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• 제2권4호
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• pp.306-310
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• 1992

Effects of hafnium, boron and zirconium on the ductility of Ni$_3$(Al, Fe) intermetallic compounds were studied using tensile test and SIMS analysis. Ni$_3$(Al, Fe) alloy with 0.1 at.% Hf, 0.05 at.% B and 0.1 at.% Zr additions showed maximum elongations of about 30% at 300K, 10% at 300K and 14% at 473K, respectively. The fracture mode of the alloy without the additive was the mixture of intergranular and transgranular fractures, but the addition of Hf, Zr or B changed the fracture mode to transgranular only. SIMS analysis showed that the beneficial effects of Hf, Zr or B segregation on the grain boundary strength are consistent with the grain boundary cohesion theory.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2015년도 제46회 하계학술대회
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• pp.1149-1150
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• 2015

In this study, hafnium was doped into aluminum zinc oxide (AZO) films were deposited on glass and Si substrates at room temperature via co-sputtering by varying the electric power applied to the Hf target. The properties of deposited Hf-doped AZO films, such as crystalline structure, optical transmittance, and band gap were analyzed using various methods such as X-ray diffraction (XRD) and UV/visible spectrophotometer. The experimental results confirmed that the abovementioned properties of Hf-AZO films strongly depended on the Hf sputtering power.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.117-117
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• 2007

The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas annealing, were investigated by XPS, NEXAFS, TEM and C-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The suppression of phase separation was observed in Hf-silicate films with high nitrogen contents. The negative shift of threshold voltage is caused by the incorporation of nitrogen in the hafnium silicate films.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 춘계학술발표강연 및 논문개요집
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• pp.85-85
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• 2001

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2002년도 추계학술발표회요약집
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• pp.289.2-289
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• 2002

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.75-75
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• 2002

• 한국재료학회지
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• 제15권4호
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• pp.275-280
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• 2005

The growth of hafnium oxide thin films by atomic layer deposition was investigated in the temperature range of $175-350^{\circ}C$ using $Hf[N(CH_3)_2]_4\;and\;O_2$ as precursors. A self-limiting growth of $0.6\AA/cycle$ was achieved at the substrate temperature of $240-280^{\circ}C$. The films were amorphous and very smooth (0.76-0.80 nm) as examined by X-ray diffractometer and atomic force microscopy, respectively. X-ray photoelectron spectroscopy analysis showed that the films grown at $300^{\circ}C$ was almost stoichiometric. Electrical measurements performed on $MoW/HfO_2$(20 nm)/Si MOS structures exhibited high dielectric constant$(\~17)$ and a remarkably low leakage current density of at an applied field of $1.5-6.2\times10^{-7}A/cm^2$ MV/cm, probably due to the stoichiometry of the films.

• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.449-453
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• 2010

In this paper, the electrical characteristics of Fin-type SONOS(silicon-oxide-nitride-oxide-silicon) flash memory device with different trapping layers are analyzed in depth. Two kinds of trapping layers i.e., silicon nitride($Si_3N_4$) and hafnium oxide($HfO_2$) are applied. Compared to the conventional Fin-type SONOS device using the $Si_3N_4$ trapping layer, the Fin-type SOHOS(silicon-oxide-high-k-oxide-silicon) device using the $HfO_2$ trapping layer shows superior program/erase speed. However, the data retention properties in SOHOS device are worse than the SONOS flash memory device. Degraded data retention in the SOHOS device may be attributed to the tunneling leakage current induced by interface trap states, which are supported by the subthreshold slope and low frequency noise characteristics.

• 한국재료학회지
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• 제16권4호
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• pp.248-252
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• 2006

An investigation is reported on the coating of ZnS:Cu,Cl phosphors by $HfO_2$ using atomic layer deposition method. Hafnium oxide films were prepared at the chamber temperature of $280^{\circ}C$ using $Hf[N(CH_3)_2]_4\;and\;O_2$ as precursors and reactant gas, respectively. XPS and ICP-MS analysis showed the surface composition of coated phosphor powder was hafnium oxide. In FE-SEM analysis, the surface morphology of uncoated phosphors became smoother and clearer as the number of ALD cycle increased from 900 to 1800. The photoluminescence intensity for coated phosphors showed $7.3{\sim}13.4%$ higher than that of uncoated. The effect means that the reactive surface is uniformly coated with stable hafnium oxide to reduce the dead surface layer without change of bulk properties and also its absorptance is almost negligible due to ultrathin(nano-scaled) films. The growth rate is about $1.1{\AA}/cycle$.