Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Property analysis of Hafnium doped Aluminum-Zinc-Oxide films

Hf의 도핑에 따른 Al-Zn-O 박막의 물성 분석

  • Lee, Sang-Hyuk (Department of Electronic Systems Engineering, Hanyang University) ;
  • Jun, Hyun-Sik (Department of Electronic Systems Engineering, Hanyang University) ;
  • Park, Jin-Seok (Department of Electronic Systems Engineering, Hanyang University)
  • 이상혁 (한양대학교 전자시스템공학과) ;
  • 전현식 (한양대학교 전자시스템공학과) ;
  • 박진석 (한양대학교 전자시스템공학과)
  • Published : 2015.07.15
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Abstract

In this study, hafnium was doped into aluminum zinc oxide (AZO) films were deposited on glass and Si substrates at room temperature via co-sputtering by varying the electric power applied to the Hf target. The properties of deposited Hf-doped AZO films, such as crystalline structure, optical transmittance, and band gap were analyzed using various methods such as X-ray diffraction (XRD) and UV/visible spectrophotometer. The experimental results confirmed that the abovementioned properties of Hf-AZO films strongly depended on the Hf sputtering power.

Keywords