• 대한화학회지
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• 제5권1호
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• pp.80-83
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• 1961

Solution of the diffusion problem applicable to steady state reduction at the ideal streaming mercury electrode are presented, with special attention being given to the influence of stream contraction caused by the gravity. To eliminate the convection occurring in the layer between the streaming mercury and the electrolytic solution, a new method have been invented, in this case the solution being tested was streamed with same velocity of the streaming mercury. Experiment have been made in order to compare the experimental value with the theoretical value and the experimental diffusion current was approached more to the theoretical value than the value obtained by earlier form of the streaming mercury electrode used by Heyrovsky.

• Transactions on Electrical and Electronic Materials
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• 제13권1호
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• pp.47-49
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• 2012

In this paper, we investigated the anomalous hump in the bottom gate staggered a-IGZO TFTs. During the positive bias stress, a positive threshold voltage shift was observed in the transfer curve and an anomalous hump occurred as the stress time increased. The hump became more serious in higher gate bias stress while it was not observed under the negative bias stress. The analysis of constant gate bias stress indicated that the anomalous hump was influenced by the migration of positively charged mobile interstitial zinc ion towards the top side of the a-IGZO channel layer.

• Food Science and Biotechnology
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• 제14권3호
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• pp.416-419
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• 2005

Unknown bacterium isolated from garlic was characterized using phenotypic methods, phylogenetic analysis, DNA-DNA hybridization, and cultural methods. The strain was identified as typical leuconostoc; Gram-positive, non-sporeforming, heterofermentative, catalase-negative and spherical. Although its 16S rRNA gene sequence showed high homology to Leuconostoc argentinum DSM $8581^T$(99.8%), DNA-DNA hybridization experiments indicated it represents novel genomic species in the genus Leuconostoc. The garlic-specific leuconostoc was more resistant to antimicrobial activity of garlic compared to other common laboratory lactic acid bacteria, and was even stimulated by low concentrations (1-2%) of garlic extract supplemented in trypticase soy broth. Growth stimulation was concentration-dependent when tested with residual aqueous layer after solvent extraction of fresh whole garlic extract.

• Macromolecular Research
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• 제15권3호
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• pp.216-220
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• 2007

A new polyfluorene-based copolymer having 2-ethylhexyloxy-5-methoxy-l,4-phenylene as an electron donating group and 2,5-diphenyl-oxadiazole as an electron withdrawing group was synthesized by the Suzuki coupling reaction. The obtained copolymer was characterized by $^1H-NMR,\;^{13}C-NMR$, and IR-spectroscopy. The weight average molecular weight ($M_w$) of the obtained polymer was 18,600 with a polydispersity index of 1.5. The maximum photoluminescence of the solution and film of the polymer was observed at 453 nm and 456 nm, respectively. A double-layer device with the configuration, ITO/PEDOT/copolymer/Al, emitted blue light at 460 nm.

• 대한설비공학회지:설비저널
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• 제6권4호
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• pp.255-261
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• 1977

This study was concerned with the performance of solar air heater using parallel channels. Heat transmission model was developed and fabricated to increase the economic feasibility for solar heating system by using the cheap zinc plate. The prformance was discussed as a function of mass flow rate, and plate, inlet and outlet temperatures. Experimental results show that heat transmission model is sufficient for the analysis of thermal characteristics of air heater and collection efficiency is better than the domestic water heater, as the range 32-49 percent. Collection efficiency in the 2 layers of glass cover is better than that in 1 layer, so it is considered better to use the 2 layers of glass cover during the cold winter season in Korea.

• 대한전자공학회논문지SD
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• 제40권12호
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• pp.1-9
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• 2003

본 논문에서는 cobalt interlayer와 TiN capping을 적용한 Ni-Silicide 구조를 제안하여 100 ㎜ CMOS 소자에 적용하고 소자 특성 연구를 하였다. Ni-Silicide의 취약한 열 안정성을 개선하기 위해 열 안정성이 우수한 Cobalt interlayer이용하여 silicide의 열화됨을 개선하였고 또한 silicide 계면의 uniformity를 향상하기 위해 TiN capping을 동시에 적용하였다. 100 ㎚ CMOS 소자에 제안한 Co/Ni/TiN 구조를 적용하여 700℃, 30분에서의 열처리 시에도 silicide의 낮은 면저항과 낮은 접합 누설 전류가 유지되었으며 100 ㎚이하 소자의 특성 변화도 거의 없음을 확인하였다. 따라서 제안한 Co/Ni/TiN 구조가 NiSi의 열 안정성을 개선시킴으로써 100 ㎚ 이하의 Nano CNOS 소자에 매우 적합한 Ni-Silicide 특성을 확보하였다.

• 한국통신학회논문지
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• 제31권3A호
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• pp.254-266
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• 2006

최근에 OFDM 기반 셀룰러 시스템의 Throughput 및 셀 커버리지를 향상시키기 위하여 SDMA(Spatial Division Multiple Access) 방식을 적용하는 자원 할당 방식에 대한 연구가 시작되고 있으나, 대부분의 OFDM/SDMA 기반 자원 할당 방식에 대한 연구는 시스템 Throughput 만을 최적화시키거나 단일 셀 환경에서만 적응이 가능한 한계가 있다. 본 논문에서는 사용자가 요구하는 트래픽 특성에 맞는 High Layer QoS(Quality of Service) 파라미터를 고려하면서, 시스템의 Throughput의 손실을 최소화하고 인접 셀 간 간섭을 고려하여 다중 셀 환경에서도 적용이 가능한 하향 링크 OFDM/SDMA 기반 자원할당 알고리즘을 제안하고, Ped A 및 다중 안테나 채널모델인 SCME (Spatial Channel Model Extensions) 채널에서 제안된 알고리즘 성능을 분석한다.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.491-496
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• 2011

Al-doped ZnO film on glass substrate is deposited by ALD in low temperature, using 4-step process (DEZ-$H_2O$-TMA-$H_2O$). To find out the optimal film condition for TCO material, we fabricate Al-doped ZnO films by increasing Al doping concentration at $100^{\circ}C$, so that the Al-doped film of 5 at% shows the lowest resistivity ($1.057{\times}10^{-2}{\Omega}{\cdot}cm$) and the largest grain size (38.047 nm). Afterwards, the electrical and physical characteristics in Al-doped films of 5 at% are also compared in accordance with increasing deposition temperature. All the films show the optical transmittance over 80% and the film deposited at $250^{\circ}C$ demonstrates the superior resistivity ($1.237{\times}10^{-4}{\Omega}{\cdot}cm$).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.10-10
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• 2008

Silicide is inevitable for CMOSFETs to reduce RC delay by reducing the sheet resistance of gate and source/drain regions. Ni-silicide is a promising material which can be used for the 65nm CMOS technologies. Ni-silicide was proposed in order to make up for the weak points of Co-silicide and Ti-silicide, such as the high consumption of silicon and the line width limitation. Low resistivity NiSi can be formed at low temperature ($\sim500^{\circ}C$) with only one-step heat treat. Ni silicide also has less dependence of sheet resistance on line width and less consumption of silicon because of low resistivity NiSi phase. However, the low thermal stability of the Ni-silicide is a major problem for the post process implementation, such as metalization or ILD(inter layer dielectric) process, that is, it is crucial to prevent both the agglomeration of mono-silicide and its transformation into $NiSi_2$. To solve the thermal immune problem of Ni-silicide, various studies, such as capping layer and inter layer, have been worked. In this paper, the Ni-silicide utilizing Pd stacked layer (Pd/Ni/TiN) was studied for highly thermal immune nano-scale CMOSFETs technology. The proposed structure was compared with NiITiN structure and showed much better thermal stability than Ni/TiN.

• 한국전기전자재료학회논문지
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• 제23권7호
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• pp.545-549
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• 2010

Low-frequency noise (1/f noise) has been measured in order to analyze the Vth instability of ZnO TFTs having two different active layer thicknesses of 40 nm and 80 nm. Under electrical stress, it was found that the TFTs with the active layer thickness of 80 nm shows smaller threshold voltage shift (${\Delta}V_{th}$) than those with thickness of 40 nm. However the ${\Delta}V_{th}$ is completely relaxed after the removal of DC stress. In order to investigate the cause of this threshold voltage instability, we accomplished the 1/f noise measurement and found that ZnO TFTs exposed the mobility fluctuation properties, in which the noise level increases as the gate bias rises and the normalized drain current noise level($S_{ID}/{I_D}^2$) of the active layer of thickness 80 nm is smaller than that of active layer thickness of thickness 40 nm. This result means that the 80 nm thickness TFTs have a smaller density of traps. This result correlated with the physical characteristics analysis performmed using XRD, which indicated that the grain size increases when the active layer thickness is made thicker. Consequently, the number of preexisting traps in the device increases with decreasing thickness of the active layer and are related closely to the $V_{th}$ instability under electrical stress.