• Korean Journal of Acupuncture
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• v.30 no.4
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• pp.305-318
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• 2013

Objectives : The aim of this study was to examine the effect of electroacupuncture(EA) at an acupoint, HT8(Sobu), on normal humans by using power spectral analysis. We examined the effect on the Heart Rate Variability(HRV), and the balance of the autonomic nervous system. Methods : Thirty-two healthy volunteers participated in this study. EEG(Electroencephalogram) power spectrum exhibits site-specific and state-related differences in specific frequency bands. A thirty-two channel EEG study was carried out on thirty-two subjects(14 males; mean age=23.5 years old, 18 females; mean age=21.5 years old). HRV and EEG were simultaneously recorded before and after acupuncture. Results : In the ${\alpha}$(alpha) band, during the HT8-acupoint treatment, the power values in the ${\alpha}$(alpha) band significantly decreased(p<0.05) at 28 channels. In the ${\beta}$(beta) band significantly decreased(p<0.05) at 26 channels. In ${\delta}$(delta) band significantly decreased(p<0.05) at 18 channels. In ${\theta}$(theta) band significantly decreased(p<0.05) at 20 channels. ${\alpha}/{\beta}$ values were increased at 6 channels and decreased at 10 channels.${\beta}/{\theta}$ values were increased at 10 channels and decreased at 19 channels. Mean-RR(RR-interval), Complexity, RMSSD(Root mean square of successive differences), SDSD(Standard deviations differences between adjacent normal R-R intervals), norm HF showed a significantly increased and mean-HRV, norm LF, LHR(LF/HF Ratio) showed a significantly decreased after HT8-acupoint treatment(p<0.05). Conclusions : These results suggest that EA at the HT8 mostly causes significant changes on alpha(28 channels), beta(26 channels), delta(18 channels), theta(20 channels) bands and mean-HRV, mean-RR, complexity, RMSSD, SDSD, norm LF, norm HF and LHR. If practicing EA at the HT8, it will regulate the function of the cerebral cortex, decrease activity of the sympathetic and increase parasympathetic nervous activity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.48-48
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• 2009

최근 빠른 동작속도와 고 집적도를 얻기 위해 metal oxide semiconductor field effect transistor (MOSFET) 의 크기는 계속 해서 줄어들고 있다. 동시에 게이트의 절연층도 얇아지게 된다. 절연층으로 사용되는 $SiO_2$ 의 두께가 2nm 이하로 얇아 지게 되면 터널링에 의해 누설 전류가 발생하게 된다. 이 문제를 해결하기 위해 $SiO_2$ 를 대체할 고유전체 물질의 연구가 활발하다. 고유전체 물질 중에는 $ZrO_2,\;Al_2O_3,\;HfO_2$ 등이 많이 연구 되어 왔다. 하지만 유전상수 이외에 band gap energy, thermodynamic stability, recrystallization temperature 등의 특성이 좋지 않아 대체 물질로 문제점이 있다. 이를 보안하기 위해 산화물을 합금과 결합시키면 서로의 장점들이 합쳐져 기준들을 만족하는 물질을 만들 수 있고 $HfAlO_3$가 그 중 하나이다. Al를 첨가하는 이유는 문턱전압을 낮추기 위해서다. $HfAlO_3$는 유전상수 18.2, band gap energy 6.5 eV, recrystallization temperature 800 $^{\circ}C$이고 열역학적 특성이 안정적이다. 게이트 절연층은 전극과 기판사이에 적층구조를 이루고 있어 이방성인 드라이 에칭이 필요하고 공정 중 마스크물질과의 선택비가 높아야한다. 본 연구는 $HfAlO_3$박막을 $BCl_3/Ar,\;N_2/BCl_3/Ar$ 유도결합 플라즈마를 이용해 식각했다. 베이스 조건은 RF Power 500 W, DC-bias -100 V, 공정압력 15 mTorr, 기판온도 40 $^{\circ}C$ 이다. 가스비율, RF Power, DC-bias, 공정 압력에 의한 마스크물질과 의 선택비를 알아보았다.

• Journal of the Korean Chemical Society
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• v.42 no.6
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• pp.629-637
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• 1998

The HF-SCF, MP2 and B3LYP calculations have been performed on the two conceivable clusters $(HF)_2(CO)$ trimers as well as their dimer complexes FH…FH, FH…CO and FH…OC applying $6-31+G^{\ast}^{\ast}$, and $6-311+G^{\ast}^{\ast}$ basis sets. A variety of ground state properties of these trimer complexes have been listed, and compared with corresponding properties of isolated monomers and combined dimers. It was calculated that FH…CO is more stable than FH…OC by average 0.85 kcal/mol and F-H…F-H…C≡O is more stable than F-H…F-H…O≡C by 1-2 kcal/mol. The C≡O stretching bands of the F-H…F-H…C≡O and F-H…F-H…O≡C were red shifted by 24, $37\;cm^{-1}$ compared with the FH…CO and FH…OC respectively. Also, H-F stretching bands were red shifted by 54 and $353\;cm^{-1}$.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1149-1150
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• 2015

In this study, hafnium was doped into aluminum zinc oxide (AZO) films were deposited on glass and Si substrates at room temperature via co-sputtering by varying the electric power applied to the Hf target. The properties of deposited Hf-doped AZO films, such as crystalline structure, optical transmittance, and band gap were analyzed using various methods such as X-ray diffraction (XRD) and UV/visible spectrophotometer. The experimental results confirmed that the abovementioned properties of Hf-AZO films strongly depended on the Hf sputtering power.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.6
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• pp.503-508
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• 2009

There are many researches on human effect by electromagnetic equipments and applications. However, most of research and guidelines for limiting human exposure to electromagnetic fields are established by mobile communication of SAR(Specific Absorption Ratio). Therefore we need to study different effects on human body when exposed to high frequency(HF) band equipments, such as human induced current etc. In this paper, we measured human induced current by RFID reader antenna of HF band in the near field and we propose human equivalent antenna which has orthogonal loops to each other. Then, we compared the induced currents on proposed equivalent antenna with human.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.225-225
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• 2011

The dielectric and optical properties of GaInZnO (GIZO), HfInZnO (HIZO) and InZnO (IZO) thin films on glass by RF magnetron sputtering method were investiged using reflection electron energy loss spectroscopy (REELS). The band gap was estimated from the onset values of REELS spectra. The band gaps of GIZO, HIZO and IZO thin films are 3.1 eV, 3.5 eV and 3.0 eV, respectively, Hf and Ga incorporated into IZO results in an increase in the energy band gap of IZO by 0.5 eV and 0.1 eV. The dielectric functions were determined by comparing the effective cross section determined from experimental REELS with a rigorous model calculation based on the dielectric response theory, using available software package, good agreement between the experimental and fitting results gives confidence in the accuracy of the determined dielectric function. The main peak of Energy Loss Function (ELF) obtained from IZO shows at 18.42 eV, which shifted to 19.43 eV and 18.15 eV for GIZO and HIZO respectively, because indicates the corporation of cation Ga and Hf in the composition. The optical properties represented by the dielectric function e, the refractive index n, the extinction coefficient k, and the transmission coefficient, T of HIZO and IZO thin films were determined from a quantitative analysis of REELS. The transmission coefficient was increased to 93% and decreased to 87% in the visible region with the incorporation of Hf and Ga in the IZO compound.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.6
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• pp.1-6
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• 2011

A transparent oxide thin film transistors (Transparent Oxide-TFT) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (a-IZO) as both of active channel and source/drain, gate electrodes and co-sputtered $HfO_2-Al_2O_3$ (HfAIO) as gate dielectric. In spite of its high dielectric constant > 20), $HfO_2$ has some drawbacks including high leakage current and rough surface morphologies originated from small energy band gap (5.31eV) and microcrystalline structure. In this work, the incorporation of $Al_2O_3$ into $HfO_2$ was obtained by co-sputtering of $HfO_2$ and $Al_2O_3$ without any intentional substrate heating and its structural and electrical properties were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The XRD studies confirmed that the microcrystalline structures of $HfO_2$ were transformed to amorphous structures of HfAIO. By AFM analysis, HfAIO films (0.490nm) were considerably smoother than $HfO_2$ films (2.979nm) due to their amorphous structure. The energy band gap ($E_g$) deduced by spectroscopic ellipsometer was increased from 5.17eV ($HfO_2$) to 5.42eV (HfAIO). The electrical performances of TFTs which are made of well-controlled active/electrode IZO materials and co-sputtered HfAIO dielectric material, exhibited a field effect mobility of more than $10cm^2/V{\cdot}s$, a threshold voltage of ~2 V, an $I_{on/off}$ ratio of > $10^5$, and a max on-current of > 2 mA.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.129-130
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• 2009

The P/E characteristics of $HfO_2$ CTF memory capacitor with $SiO_2/HfO_2/Al_2O_3$(OHA) engineered tunnel barrier were investigated. After a growth of thermal oxide with a thickness of 2 nm, 1 nm $HfO_2$ and 3 $Al_2O_3$ layers were deposited by atomic layer deposition (ALD) system. The band offset was calculated by analysis of conduction mechanisms through Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot. Moreover the PIE characteristics of $HfO_2$ CTF memory capacitor with OHA tunnel barrier was presented.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.08a
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• pp.125-135
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• 2000

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.11
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• pp.1047-1053
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• 2011

In this paper, we proposed an HF-band wireless power transfer system with adaptive frequency control circuit for efficiency enhancement in a short range. In general, a wireless power transfer system shows an impedance mismatching due to a reflected impedance, because a coupling coefficient is varied with respect to separation distance between two resonating loop antennas. The proposed method can compensate this impedance mismatching by varying input frequency of a voltage-controlled oscillator adaptively with respect to separation distance. Therefore, transmission efficiency is enhanced in a short distance, where large impedance mismatch occurs. The adaptive frequency circuit consists of a directional coupler, a detector, and a loop filter. In order to demonstrate the performance of the proposed system, a wireless power transfer system with adaptive frequency control circuits is designed and implemented, which has a pair of loop antennas with a dimension of 30${\times}$30 $cm^2$. From measured results, the proposed system shows enhanced efficiency performance than the case without adaptive frequency control.