Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.06a
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- Pages.129-130
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- 2009
Fabrication of engineered tunnel-barrier memory with $SiO_2/HfO_2/Al_2O_3$ tunnel layer
$SiO_2/HfO_2/Al_2O_3$ 적층구조 터널링 절연막을 적용한 차세대 비휘발성 메모리의 제작
- Oh, Se-Man (Kwangwoon Univ.) ;
- Park, Gun-Ho (Kwangwoon Univ.) ;
- Kim, Kwan-Su (Kwangwoon Univ.) ;
- Jung, Jong-Wan (Sejong Univ) ;
- Jeong, Hong-Bae (Kwangwoon Univ.) ;
- Cho, Won-Ju (Kwangwoon Univ.)
- Published : 2009.06.18
Abstract
The P/E characteristics of