• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.490.2-490.2
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• 2014

Since the general solar cells accept sun light at the front side, excluding the electrode area, electrons move from the emitter to the front electrode and start to collect at the grid edge. Thus the edge of gridline can be important for electrical properties of screen-printed silicon solar cells. In this study, the improvement of electrical properties in screen-printed crystalline silicon solar cells by contact treatment of grid edge was investigated. The samples with $60{\Omega}/{\square}$ and $70{\Omega}/{\square}$ emitter were prepared. After front side of samples was deposited by SiNx commercial Ag paste and Al paste were printed at front side and rear side respectively. Each sample was co-fired between $670^{\circ}C$ and $780^{\circ}C$ in the rapid thermal processing (RTP). After the firing process, the cells were dipped in 2.5% hydrofluoric acid (HF) at room temperature for various times under 60 seconds and then rinsed in deionized water. (This is called "contact treatment") After dipping in HF for a certain period, the samples from each firing condition were compared by measurement. Cell performances were measured by Suns-Voc, solar simulator, the transfer length method and a field emission scanning electron microscope. According to HF treatment, once the thin glass layer at the grid edge was etched, the current transport was changed from tunneling via Ag colloids in the glass layer to direct transport via Ag colloids between the Ag bulk and the emitter. Thus, the transfer length as well as the specific contact resistance decreased. For more details a model of the current path was proposed to explain the effect of HF treatment at the edge of the Ag grid. It is expected that HF treatment may help to improve the contact of high sheet-resistance emitter as well as the contact of a high specific contact resistance.

• Journal of the Korean institute of surface engineering
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• v.44 no.6
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• pp.255-259
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• 2011

The thickness dependence of magnetic properties was experimentally investigated in nanocrystalline Fe-Hf-N thin films fabricated by a RF magnetron sputtering method. In order to investigate the thickness effect on their magnetic properties, the films are prepared with different thickness ranges from 90 nm to 330 nm. It was revealed that the coercivity of the thin film increased with film thickness. On the contrary, the saturation magnetization decreased with film thickness. On the basis of the SEM and TEM, an amorphous phase forms during initial growth stage and it changes to crystalline structure after heat treatment at $550^{\circ}C$. Nanocrystalline Fe-Hf-N particles are also generated.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.27-31
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• 2018

The effect of $NH_3$ plasma passivation on the chemical and electrical characteristics of ALD HfAlO dielectric on the InGaAs substrate was investigated. The results show that $NH_3$ plasma passivation exhibit better electrical & chemical performance such as much lower leakage current, lower density of interface trap(Dit) level, and low unstable interfacial oxide. $NH_3$ plasma passivation can effectively enhance interfacial characteristics. Therefore $NH_3$ plasma passivation improved the HfAlO dielectric performance on the InGaAs substrate.

• Corrosion Science and Technology
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• v.11 no.5
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• pp.191-195
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• 2012

The aim of this study was to investigate effects of hafnium content on the corrosion behavior of Ti alloys in electrolyte containing chloride ion. For this study, Ti-Hf binary alloys contained 10 wt%, 20 wt% and 30 wt% Hf were manufactured in a vacuum arc-melting furnace and subjected to heat treatment for 12h at $1000^{\circ}C$ in an argon atmosphere. The pitting corrosion behavior of the specimens was examined through potentiodynamic and potentiostatic tests in 0.9 wt% NaCl electrolyte at $36.5{\pm}1^{\circ}C$. The corrosion morphology of Ti-xHf alloys was investigated using optical microscopy (OM) and X-ray diffractometer (XRD). From the optical microstructures and XRD results, needle-like martensite ($\alpha$') phases of the Ti-xHf alloys increased with an increase of Hf addition. Corrosion current density $(I_{corr})$ and current density $(I_{300mV})$ in passive region decreased, whereas, corrosion potential increased with Hf content. At the constant potential ($300mV_{SCE}$), current density decreased as time increased.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.3.1-3.1
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• 2010

Water splitting reaction using photocatalysts is of great interest in the utilization of solar energy [1]. In the present work, visible light-responsive $TiO_2$ thin films (Vis-$TiO_2$) were prepared by a radio frequency magnetron sputtering (RF-MS) deposition method and applied for the separate evolution of $H_2$ and $O_2$ from water as well as the photofuel cell. Special attentions will be focused on the effect of HF treatment of Vis-$TiO_2$ thin films on their photocatalytic activities. Vis-$TiO_2$ thin films were prepared by an RF-MS method using a calcined $TiO_2$ plate and Ar as the sputtering gas. The Vis-$TiO_2$ thin films were then deposited on the Ti foil substrate with the substrate temperature at 873 K (Vis-$TiO_2$/Ti). Vis-$TiO_2$/Ti thin films were immersed in a 0.045 vol% HF solution at room temperature. The effect of HF treatments on the activity of Vis-$TiO_2$/Ti thin films for the photocatalytic water splitting reaction have been investigated. Vis-$TiO_2$/Ti thin films treated with HF solution (HF-Vis-$TiO_2$/Ti) exhibited remarkable enhancement in the photocatalytic activity for $H_2$ evolution from a methanol aqueous solution as well as in the photoelectrochemical performance under visible light irradiation as compared with the untreated Vis-$TiO_2$/Ti thin films. Moreover, Pt-loaded HF-Vis-$TiO_2$/Ti thin films act as efficient and stable photocatalysts for the separate evolution of $H_2$ and $O_2$ from water under visible light irradiation in the presence of chemical bias. Thus, HF treatment was found to be an effective way to improve the photocatalytic activity of Vis-$TiO_2$/Ti thin films. Furthermore, unique separate type photofuel cell was fabricated using a Vis-$TiO_2$ thin film as an electrode, which can generate electrical power under solar light irradiation by using various kinds of biomass derivatives as fuel. It was found that the introduction of an iodine ($I^-/{I_3}^-$) redox solution at the cathode side enables the development of a highly efficient photofuel cell which can utilize a cost-efficient carbon electrode as an alternative to the Pt cathode.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.20.1-20.1
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• 2000

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.447-450
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• 2001

Abstract-Si direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively. Components existed in the interlayer were analysed by using FT-lR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 2.4kgf/cm$^2$∼Max : 14.9kgf/cm$^2$).

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.506-508
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• 2008

In this work, we used impedance spectroscopy analysis to determine the effect of the $HfO_X$ treatment on the surface of ITO and to model the equivalent circuit for OLEDs. Devices with an ITO/Organic material/Al structure can be modeled as resistances and capacitances arranged in parallel or in series. The number of elements depends on the composition of the structure, essentially the number of layers, and the contacts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.164-167
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS applications because of its application possibility in harsh environments. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The 3C-SiC epitaxial films grown on Si(100) were characterized by AFM and XPS, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/$\textrm{cm}^2$∼Max : 15.5 kgf/$\textrm{cm}^2$).

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.2020-2022
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS fileds because of its application possibility in harsh environements. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The PECVD oxide was characterized by XPS and AFM, respectively. The characteristics of bonded sample were measured under different bonding conditions of HF concentration and applied pressure, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/$cm^2{\sim}$ Max : 15.5 kgf/$cm^2$).