• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.84-85
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• 2008

In this paper, differential cross coupled LC VCOs with two noise frequency filtering techniques are proposed. Both VCOs are based on symmetric capacitor with asymmetric inductor tank structure. The VCO using low pass filtering technique shows low phase noise of -130.40 dBc/Hz at 1 MHz offset when the center frequency is 1.619 GHz. And the other VCO using band pass filtering technique shows -127.93 dBc/Hz at 1 MHz offset frequency when center frequency is 1.604 GHz. Two noise frequency filtering techniques are approached with different target.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.77-80
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• 2002

In this paper, InP-based HBTs have been optimally designed by numerical simulation and fabricated by the self-aligned process. The structure of HBT was designed in terms of the current gain*f$_{max}$ for the base and f$_{T}$*f$_{max}$ for the collector. The designed structure produced the current gain of about 50 and the cutoff frequency and the maximum oscillation frequency of 87GHz and 2940Hz respectively. In addition, we present a study of the vertical and lateral etching of InP with the mask sides parallel to the principal crystallographic axes, [0101 and (001). This etching characteristics arc used to fabricate self-aligned HBT structures with reduced parasitic effects.s.s.s.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 I
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• pp.346-349
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• 2003

A SiGe HBT MMIC double balaced up-converter has been designed and fabricated for C-band WLAN applications. The up-converter is based on the Gilbert cell mixer with an active baluns for differential inputs of LO and IF signals. The designed up-converter exhibits a conversion gain 12.5dB for a -10 dBm LO power. It also exhibits LO-RF isolation of 19.3dBc, and IF-RF isolation of 23.3 dBc at a 1-dB compression point of -14.2dBm

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권2호
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• pp.114-118
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• 2006

In this paper, the effect of base and collector structures on DC, small signal characteristics of SiGe HBTs fabricated by RPCVD was investigated. The structure of SiGe HBTs was designed into four types as follows: SiGe HBT structures which are standard, apply extrinsic-base SEG selective epitaxial growth (SEG), apply selective collector implantation (SCI), and apply both extrinsic-base SEG and SCI. We verified the devices could be applied to the fabrication of RFIC chip through a fully integrated 2.4 GHz down-conversion mixer.

• 정보와 통신
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• 제17권12호
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• pp.59-66
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• 2000

소자의 특성을 정확히 묘사하고 이를 회로설계에 사용하기 위해서는 정확한 모델링과 이에 관련된 모델변수를 정확히 추출하는 것이 중요하다. 특히, 바이폴라 접합 트랜지스터 및 SiGe HBT를 비롯한 이종접합 트랜지스터의 베이스 저항은 베이스 단자로부터 전류가 에미터-베이스의 접합면을 향해 퍼져 들어가기 때문에 이 전류가 겪는 저항 성분(spreading resistance)은 하나의 고정값으로 구할 수가 없으며 전류값에 따라 그 효과가 민감하게 변하게 된다. 이와 같은 이유로 다른 어떠한 모델변수들 보다 베이스 저항 모델변수의 정확한 추출이 매우 어렵다. 본 논문에서는 DC에서 측정된 베이스 저항값을 기본으로 하여 베이스 저항 모델변수들을 정확하고 체계적으로 추출하는 방법에 관하여 논의한다. 본 논문의 베이스 저항 관련 모델변수들의 추출에는 한국전자통신연구원에서 개발한 SiGe HBT 소자를 사용하였으며, 또한 모델 변수 추출은 SILVACO사의 UTMOST III 컴퓨터 프로그램을 이용하였다.

• Journal of electromagnetic engineering and science
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• 제4권1호
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• pp.37-42
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• 2004

In this paper, LNB(low noise block) downconverter MMIC is designed for Ku-band satellite communication system using InGaP/GaAs HBT high linear process. Designed MMIC consists of low noise amplifier, double balanced mixer, and IF amplifier with a total chip area of 2.6${\times}$1.1 $\textrm{mm}^2$. Designed MMIC has the characteristics of over 37.5 ㏈ conversion gain, 14 ㏈ noise figure, ripple of 3 ㏈, and output-referred $P_{1dB}$TEX>(1 ㏈ compression power) of 2.5 ㏈m with total power dissipation of 3 V, 50 mA.

• Journal of electromagnetic engineering and science
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• 제7권2호
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• pp.64-68
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• 2007

An InGaP/GaAs HBT based differential Colpitts voltage control oscillator(VCO) is presented in this paper. In the VCO core, two switching transistors are introduced to steer the core bias current to save power. An LC tank with an inductor quality factor(Q) of 11.4 is used to generate oscillation frequency. It has a superior phase noise characteristics of -130.12 dBc/Hz and -105.3 at 1 MHz and 100 kHz frequency offsets respectively from the carrier frequency(1.566 GHz) when supplied with a control voltage of 0 volt. It dissipates output power of -5.3 dBm. Two pairs of on-chip base collector (BC) diodes are used in the tank circuit to increase the VCO tuning range(168 MHz). This VCO occupies the area of $1.070{\times}0.90mm^2$ including buffer and pads.

• 한국통신학회논문지
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• 제31권3A호
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• pp.356-359
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• 2006

A monolithic SiGe HBT variable gain driver amplifier(VGDA) with high dB-linear gain control and high linearity has been developed as a driver amplifier with ground-shielded microstrip lines for 5-GHz transmitters. The VGDA consists of three blocks such as the cascode gain-control stage, fixed-gain output stage, and voltage control block. The circuit elements were optimized by using the Agilent Technologies' ADSs. The VGDA was implemented in STMicroelectronics' 0.35${\mu}m$ Si-BiCMOS process. The VGDA exhibits a dynamic gain control range of 34 dB with the control voltage range from 0 to 2.3 V in 5.15-5.35 GHz band. At 5.15 GHz, maximum gain and attenuation are 10.5 dB and -23.6 dB, respectively. The amplifier also produces a 1-dB gain-compression output power of -3 dBm and output third-order intercept point of 7.5 dBm. Input/output voltage standing wave ratios of the VGDA keep low and constant despite change in the gain-control voltage.

• Bulletin of the Korean Chemical Society
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• 제17권7호
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• pp.616-621
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• 1996

The transfer of excitation energy from solvent to solute in polystyrene films doped with 2-(2'-hydroxyphenyl)benzothiazole (HBT) which undergoes intramolecular proton transfer in excited electronic state has been studied by employing steady state and time-resolved fluorescence measurements. The degree of Forster overlap between donor and acceptor molecule in this system is estimated to be moderate. Energy transfer efficiency increases with solute concentration at low concentration range and levels off at high concentration. It is observed that the excimer form of polystyrene is largely involved in energy transfer process. Photostability of HBT in polystyrene to UV light is also investigated to get insight into the long wavelength absorption band of HBT which was observed upon electron radiation.

• 한국미생물·생명공학회지
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• 제48권4호
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• pp.463-470
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• 2020

삼림지역의 고목에서 분리한 JS18 균주는 합성 멜라닌을 탈색하는 세포 외 분비효소를 생산했다. JS18 균주의 internal transcribed spacer (ITS) 염기서열을 분석하고 계통학적으로 확인한 결과 본 균주는 Trametes velutina로 동정되었다. JS18 균주는 laccase 활성을 나타냈지만 manganese peroxidase 및 lignin peroxidase 활성은 나타내지 않았다. 본 균주를 회분배양한 결과 멜라닌 탈색 활성은 laccase 활성으로부터 유래하는 것으로 확인되었다. Laccase 유도인자로써 Syringic acid 및 CuSO4를 첨가하고 25℃에서 7일간 배양한 결과 배양상등액에서 98 U/ml의 laccase 활성을 나타내었다. GYP 배지에서 배양한 T. velutina의 배양상등액에서 ammonium sulfate 침전, Hi-trap Q Sepharose 컬럼 및 gel filtration을 이용하여 효소를 정제하였고, SDS-PAGE에서 약 67 kDa의 분자량을 나타내었다. 정제된 효소의 멜라닌 탈색율은 효소 단독으로는 24 시간 만에 단지 4% 만을 나타내는 반면, HBT의 존재 하에서는 80%로 향상되었다. 또한 1.5 mM HBT의 농도에서는 최대 81%의 멜라닌 탈색율을 나타내었다. 본 효소의 멜라닌 탈색에 대한 최적 pH 및 온도는 각각 5.0와 37℃를 나타내었다. 본 연구에서는 T. velutina JS18 유래 laccase가 촉매하는 멜라닌 탈색 반응에서 redox mediator로써 HBT의 적용 가능성을 확인하였다.