References
- John D. Cressler, 'SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications,' IEEE Trans. on Microwave Theory and Techniques, vol. 46, no. 5, pp.572-589, May 1998 https://doi.org/10.1109/22.668665
- Baojun Li, et al., 'Silicon-germanium microphotonic switches,' Journal of the Korean Physical Society, vol. 46, no. 5, pp.SI9-S23, May 2005
- Jonathan P. Comeau, et al., 'An 8.4-12.0 GHz down-conversion mixer implemented in SiGe technology,' IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 13-16, Sept 2004 https://doi.org/10.1109/SMIC.2004.1398155
- Guofu Nui, et al., 'Noise modeling and SiGe profile design tradeoffs for RF applications,' IEEE Trans. on Electron Devices, vol. 47, no. 11, pp.2037-2044, Nov. 2000 https://doi.org/10.1109/16.877164
- Jong-Min Lee, et al., 'Design and fabrication of wideband transimpedance amplifier by using InGaAs/InP HBT technology,' Journal of the Korean Physical Society, vol. 45, no. 12, pp.S90-S908, Dec. 2004
- Ja-Yol Lee, et al., 'Fully differential 5-GHz LC-tank VCOs with improved phase noise and wide tuning range,' ETRI Journal, vol. 27, no. 5, pp.473-483, Oct 2005 https://doi.org/10.4218/etrij.05.0905.0035
- Sang-Heung Lee, et al., 'Monolithic SiGe up-/down-conversion mixers with active baluns,' ETRI Journal, vol. 27, no. 5, pp.569-578, Oct 2005 https://doi.org/10.4218/etrij.05.0905.0034
-
Hyung S. Yoon, 'DC and RF characteristics of InA1As/InGaAs/InP pseudomorphic HEMTs recessed by succinic acid/
$H_2O_2$ ,' Journal of the Korean Physical Society, vol. 45, no. 12, pp.S594-S597, Dec. 2004 - William E. Ansley, et al., 'Base-profile optimization for minimum noise figure in advanced UHV /CVD SiGe HBTs,' IEEE Trans. on Microwave Theory and Techniques, vol. 46, no. 5, pp. 653-660, May 1998 https://doi.org/10.1109/22.668678