The Journal of Korean Institute of Communications and Information Sciences (한국통신학회논문지)

The Korean Institute of Commucations and Information Sciences (한국통신학회)
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A SiGe HBT Variable Gain Driver Amplifier for 5-GHz Applications

  • 채규성 (경희대학교 일반대학원 전파공학과) ;
  • 김창우 (경희대학교 일반대학원 전파공학과)
  • Published : 2006.03.01
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Abstract

A monolithic SiGe HBT variable gain driver amplifier(VGDA) with high dB-linear gain control and high linearity has been developed as a driver amplifier with ground-shielded microstrip lines for 5-GHz transmitters. The VGDA consists of three blocks such as the cascode gain-control stage, fixed-gain output stage, and voltage control block. The circuit elements were optimized by using the Agilent Technologies' ADSs. The VGDA was implemented in STMicroelectronics' 0.35${\mu}m$ Si-BiCMOS process. The VGDA exhibits a dynamic gain control range of 34 dB with the control voltage range from 0 to 2.3 V in 5.15-5.35 GHz band. At 5.15 GHz, maximum gain and attenuation are 10.5 dB and -23.6 dB, respectively. The amplifier also produces a 1-dB gain-compression output power of -3 dBm and output third-order intercept point of 7.5 dBm. Input/output voltage standing wave ratios of the VGDA keep low and constant despite change in the gain-control voltage.

Keywords

References

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