• Title/Summary/Keyword: H-Band

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[발표취소] Star formation in overdense region around z=1.44 radio galaxy 6CE 1100+3505

  • Shim, Hyunjin
    • The Bulletin of The Korean Astronomical Society
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    • v.40 no.2
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    • pp.49.1-49.1
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    • 2015
  • Star formation in galaxies that lie in dense environment tends to increase as the redshift of the cluster increases. At z~1.4, the situation turns to be complex; some clusters still harbor galaxies with vigorous star formation, and others are populated with relatively old, massive galaxies. We present the result from narrow-band photometric study of the fields around the radio galaxy 6CE 1100+3505 at z=1.44. Deep H- and H-narrow band data have been obtained using CFHT/WIRCAM which cover the corresponding wavelengths for redshifted $H{\alpha}$. While the number of IRAC 3.6, and $4.5{\mu}m$ selected sources show clear excess within the central ~1Mpc area from the radio galaxy, number of galaxies identified to show excess in H-narrow band is very small. We discuss the possible integrated star formation rate in this overdense structure, and the implication to the evolution of cosmic star formation rate as a function of environment.

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Deposition of $\alpha$-Si:H thin films by PECVD method (플라즈마 화학증착법을 이용한 $\alpha$-Si:H박막의 제조)

  • 정병후;문대규;임호빈
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1991.10a
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    • pp.63-67
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    • 1991
  • Amorphous silicon films were deposited on glass, [100] single crystal silicon wafer with thermally grown silicon dioxide, and [100] silicon wafer substrates by Plasma Enhanced Chemical Vapor Deposition(with argon diluted silane source gas). Growth rate, UV optical band edge, and the hydrogen quantity in the amorphous silicon films have been investigated as a function of the preparation conditions by measuring film thickness, UV-absorbency, and FT-IR transmittance. The growth rate of the ${\alpha}$-Si:H films increases with increasing substrate temperture, flow rate and R.F. power density. The UV optical band edge shifts to blue with the increases in the deposition pressure. Increasing substrate temperature shifts the UV optical band edge of the films to red. Hydrogen quantity in the ${\alpha}$-Si:H films increases with an increases in the R.F. powr and decreases with an increase in the substrate temperature.

Large Band Gap Attenuation of CdS Nanoclusters after H2S Exposure

  • Han, Seung-Woo;Park, Eun-Hye;Kang, Kwang-Sun
    • Current Photovoltaic Research
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    • v.7 no.2
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    • pp.29-32
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    • 2019
  • Large band gap attenuation of CdS nanoclusters in hybrid sol gel matrix comprised of 3-(trimethoxysilyl)propyl methacrylate (TMSPM), 15 wt. % zirconium, and various amounts of cadmium acetate was observed after $H_2S$ exposure. Hybrid sol gel matrixes were prepared by hydrolysis and condensation reactions. The sol gels contained with various amount of cadmium acetate were spin coated to glass substrates and exposed to $H_2S$ gas. The UV-visible absorption peaks were shifted toward blue with increasing the amount of CdS nanoclusters and were shifted to the red after thermal process. Significant amount of -OH absorption peaks were reduced after thermal process. Strong room temperature photoluminescence (PL) of CdS nanoclusters was observed after exposing to $H_2S$ gas. The PL intensity increased for several minutes and slowly decreased thereafter. The luminescence peaks were continuously shifted toward blue as the time passed. Extraordinary Stokes shift (approximately 160 nm) was observed.

Adsorption of Water on Cation Supported Layer Silicates (陽이온이 支持된 Layer Silicate 上에서의 水分의 吸着)

  • Jong Taik Kim;Shon, Jong Rack
    • Journal of the Korean Chemical Society
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    • v.19 no.5
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    • pp.317-324
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    • 1975
  • The adsorptions of gaseous $H_2O\;and\;D_2O\;on\;Na^+-,\;Ca^{2+}-,\;and\;Al^{3+}$ montmorillonites at various temperatures were undertaken. Break down of ir hydroxyl stretching bands into four Gaussian components was made by means of manual technique. Resonance theory of water to form silanol hydroxyl group was supported by $3625cm^{-1}$ band for OH and $2680cm^{-1}$ band for OD which depend on amounts of water adsorbed. The broad bands at about $3400 cm^{-1}\;and\;2475cm^{-1}$ were assigned to stretching band of silanol OH hydrogen bonded to adsorbed water. The prominent $3230 cm^{-1}$ band together with component around $2345 cm^{-1}$ were attributed to adsorbed $H_2O\;and\;D_2O$ respectively. The chemical nature of the hydrogen bonding between adsorbed water and neighboring surface OH was explained adequately in terms of electrostatic interaction.

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Purification and characterization of the chitinase from Bacillus subtilis JK-56 (Bacillus subtilis JK-56이 생산하는 chitinase isozyme의 정제와 특성 규명)

  • 전홍기;김낙원;정영기
    • Journal of Life Science
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    • v.12 no.1
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    • pp.77-86
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    • 2002
  • Chitin, a $\beta$-1,4 polymer of N-acetyl-D-glucosamine, is one of the most abundant organic compounds in nature. Chitinase (EC 3.2.1.14) is an enzyme that degrades chitin to chito-oligosaccharides, diacetyl rhitobiose and N-acetyl-D-glucosamine. An extracellular chitinase-producing bacterial strain was isolated from soil and named to as Bacillus subtilis JK-56. Optimum culture condition of B. subtilis JK-56 for the production of chitinase was 1% chitin, 0.5% polypepton, 0.1% KCl, 0.05% MnS $O_4$.4$H_2O$, 37$^{\circ}C$, initial pH 7.0 and 40 hour culture time. When B. subtilis JK-56 was grown in the optimum medium, one major active band and two minor active bands were detected by native-PAGE and active staining of the gel. Among them, the major band was purified from the culture supernatant by 70% ammonium sulfate precipitation and native-PAGE with BIO-RAD Model 491 Prep-Cell and named as Chi-56A. Its molecular weight was estimated to be 53kDa monomer and the isoelectric point (pI) was pH 4.3. The pH and temperature for the optimum activity of Chi-56A were pH 6.0 and $65^{\circ}C$, respectively. Chi-56A was stable up to $65^{\circ}C$ and in alkaline region. Its $K_{m}$ value for colloidal chitin was 17.33g/L. HPLC analysis of the reaction products confirmed that Chi-56A was an exo type chitinase.e.

Identification of Chromosomal Band Markers of the Korean Native Chicken (한국재래계의 염색체 분염 표지 분석)

  • Baik, K. H.;Lee, C. Y.;Sang, B. D.;Choi, C. H.;Kim, H. K.;Sohn, S. H.
    • Journal of Animal Science and Technology
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    • v.45 no.1
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    • pp.1-12
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    • 2003
  • The present study was carried out to establish the standard karyotype of the Korean Native Chicken and to find their chromosomal band markers using high-resolution banding technique. Chromosome analysis was performed on early chick embryos following in vitro culture of fertilized eggs of the yellow-brown and the red-brown lines of the Korean Native Chicken which had been established at National Livestock Research Institute. The high-resolution banding of the chromosome was achieved by treating the embryos with ethidium bromide and colchicine during culture. On GTG-banding, the Korean Native Chicken exhibited a typical chick banding pattern in all the macrochromosomes. Overall chromosomal morphology and positions of typical landmarks of the Korean Native Chicken were virtually identical to those of White Leghorn and International System for Standardized Avian Karyotypes(ISSAK). However, the lengths and G-band numbers of the Korean Native Chicken macrochromosomes were greater than those of White Leghorn and ISSAK. Especially in chromosomes 1 and Z, the Korean Native Chicken exhibited more separated bands in compared with ISSAK. In C-banding patterns, although a lot of observed cells had C-band polymorphic patterns, almost the Korean Native Chicken macrochromosomes had heterochromatic C-band on centromeres and/or near terminal part. However, the heterochromatic C-band was constantly observed at the end of q-arm of Z chromosomes and on the whole W chromosome. In addition, the Korean Native Chicken exhibited distinctive heteromorphic patterns of C-bands on the centromere of chromosome 3 and at the end of q-arm of Z chromosome between homologous chromosomes.

A study on ESD Protection circuit based on 4H-SiC MOSFET (4H-SiC MOSFET기반 ESD보호회로에 관한 연구)

  • Seo, Jeong-Ju;Do, Kyoung-Il;Seo, Jeong-Ju;Kwon, Sang-Wook;Koo, Yong-Seo
    • Journal of IKEEE
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    • v.22 no.4
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    • pp.1202-1205
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    • 2018
  • In this paper, we proposed ggNMOS based on 4H-SiC material and analyzed its electrical characteristics. 4H-SiC is a wide band-gap meterial, which is superior in area contrast and high voltage characteristics to Si material, and is attracting attention in the power semiconductor field. The proposed device has high robustness and strong snapback characteristics. The process consisted of SiC process and electrical characteristics were analyzed by TLP measurement equipment.

Electronic Structure of the SrTiO3(001) Surfaces: Effects of the Oxygen Vacancy and Hydrogen Adsorption

  • Takeyasua, K.;Fukadaa, K.;Oguraa, S.;Matsumotob, M.;Fukutania, K.
    • Applied Science and Convergence Technology
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    • v.23 no.5
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    • pp.201-210
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    • 2014
  • The influence of electron irradiation and hydrogen adsorption on the electronic structure of the $SrTiO_3$ (001) surface was investigated by ultraviolet photoemission spectroscopy (UPS). Upon electron irradiation of the surface, UPS revealed an electronic state within the band gap (in-gap state: IGS) with the surface kept at $1{\times}1$. This is considered to originate from oxygen vacancies at the topmost surface formed by electron-stimulated desorption of oxygen. Electron irradiation also caused a downward shift of the valence band maximum indicating downward band-bending and formation of a conductive layer on the surface. With oxygen dosage on the electron-irradiated surface, on the other hand, the IGS intensity was decreased along with upward band-bending, which points to disappearance of the conductive layer. The results indicate that electron irradiation and oxygen dosage allow us to control the surface electronic structure between semiconducting (nearly-vacancy free: NVF) and metallic (oxygen de cient: OD) regimes by changing the density of the oxygen vacancy. When the NVF surface was exposed to atomic hydrogen, in-gap states were induced along with downward band bending. The hydrogen saturation coverage was evaluated to be $3.1{\pm}0.8{\times}10^{14}cm^{-2}$ with nuclear reaction analysis. From the IGS intensity and H coverage, we argue that H is positively charged as $H^{{\sim}0:3+}$ on the NVF surface. On the OD surface, on the other hand, the IGS intensity due to oxygen vacancies was found to decrease to half the initial value with molecular hydrogen dosage. H is expected to be negatively charged as $H^-$ on the OD surface by occupying the oxygen vacancy site.

Microstrip Antenna for ISM Band using L-Shaped feeding structure (L형 급전구조를 이용한 ISM대역용 마이크로스트립 안테나 설계)

  • Park, Chang-Hyun;Kim, Pyoung-Gug;Kim, Kab-Ki
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 2007.04a
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    • pp.440-443
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    • 2007
  • In this paper, microstrip antenna is designed for industrial-scientific-medical(ISM)band of S-Band. We proposed that radiation element of antenna, which is rectangle patch shape. The feeding structure used L-shaped structure. Center frequency and -l0dB bandwidth are investigated by change of length and width in patch plane. And maximum gain, front to back ratio and 3dB beam width is presented by simulation radiation pattern of antenna in frequency ISM Band. The center frequency is 2.45GHz, band width is $2.314{\sim}2.577GHz$ with 263MHz(11%). And the antenna maximum gain is 9.3dBi, 3dB beam width E-plane is $52.5^{\circ}$, H-plane is $64.7^{\circ}$.

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Design of FIR Halfband Filters using Generalized Lagrange Polynomial (일반화된 라그랑지 다항식을 사용하는 FIR 하프밴드 필터 설계)

  • Bong, Jeongsik;Jeon, Joonhyeon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.10
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    • pp.188-198
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    • 2013
  • Maximally flat (MAXFLAT) half-band filters usually have wider transition band than other filters. This is due to the fact that the maximum possible number of zeros at $z={\pm}1$ is imposed, which leaves no degree of freedom, and thus no independent parameters for direct control of the frequency response. This paper describes a novel method for the design of FIR halfband filters with an explicit control of the transition-band width. The proposed method is based on a generalized Lagrange halfband polynomial (g-LHBP) with coefficients parametizing a 0-th coefficient $h_0$, and allows the frequency response of this filter type to be controllable by adjusting $h_0$. Then, $h_0$ is modeled as a steepness parameter of the transition band and this is accomplished through theoretically analyzing a polynomial recurrence relation of the g-LHBP. This method also provides explicit formulas for direct computation of design parameters related to choosing a desired filter characteristic (by trade-off between the transition-band sharpness and passband & stopband flatness). The examples are shown to provide a complete and accurate solution for the design of such filters with relatively sharper transition-band steepness than MAXFLAT half-band filters.