• Title/Summary/Keyword: Growth pressure

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Novel Three-Dimensional Knitted Fabric for Pressure Ulcer Prevention: Preliminary Clinical Application and Testing in a Diabetic Mouse Model of Pressure Ulcers

  • Kim, Sungae;Hong, Jamin;Lee, Yongseong;Son, Daegu
    • Archives of Plastic Surgery
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    • v.49 no.2
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    • pp.275-284
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    • 2022
  • Background Population aging has led to an increased incidence of pressure ulcers, resulting in a social burden and economic costs. We developed a three-dimensional knitted fabric (3-DKF) with a pressure-reducing function that can be applied topically in the early stages of pressure ulcers to prevent progression. Methods We evaluated the effects of the 3-DKF in a streptozotocin-induced diabetes mellitus pressure ulcer mouse model, and the fabric was preliminarily applied to patients. Twelve-week-old male C57BL/6 mice were used for the animal experiments. In the pressure ulcer mouse model, an ischemia-reperfusion injury was created using a magnet on the dorsa of the mice. Pressure was measured with BodiTrak before and after applying the 3-DKF to 14 patients at risk of sacral pressure ulcers. Results In the 3-DKF-applied mice group, the ulcers were shallower and smaller than those in the control group. Compared with the mice in the control group, the 3-DKF group had lower platelet-derived growth factor-α and neutrophil elastase expression, as parameters related to inflammation, and increased levels of transforming growth factor (TGF)-β1, TGF-β3, proliferating cell nuclear antigen, and α-smooth muscle actin, which are related to growth factors and proliferation. Additionally, typical normal tissue staining patterns were observed in the 3-DKF group. In the preliminary clinical analysis, the average skin pressure was 26.2 mm Hg before applying the 3-DKF, but it decreased to an average of 23.4 mm Hg after 3-DKF application. Conclusion This study demonstrated that the newly developed 3-DKF was effective in preventing pressure ulcers through testing in a pressure ulcer animal model and preliminary clinical application.

In-situ phosphorus doping effect on epitaxial growth of $Si_{1-x}Ge_{x}$ film with high ge fraction (고농도 ge fraction을 갖는 $Si_{1-x}Ge_{x}$ 막의 epitaxial growth에 대한 in-situ phosphorus doping 효과)

  • 이철진;박정훈;김성진
    • Proceedings of the IEEK Conference
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    • 1998.06a
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    • pp.437-440
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    • 1998
  • We studied phosphorus doping effect on the epitaxial growth of $Si_{1-x}Ge_{x}$ film with high Ge fraction on Si substates at 550.deg. C by LPCVD. In a low $Ph_{3}$ partial pressure region such as below 1.25 mPa, the phosphorus dopant concentration increased linearly with increasing $PH_{3}$ partial pressure while the deposition rate and the Ge fraction were constant. In a higher $PH_{3}$ partial pressure region, the phosphorus dopant concentration and the deposition rate decreased, while the Ge fraction slightly increased. The deposition arate and the Ge fraction increased with increasing $GeH_{4}$ partial pressure while the phophours dopant concentration decreased. But the increasing rate of Ge fraction with incrasing $PH_{3}$ partial pressure was reduced at a high $GeH_{4}$ partial pressure. According to test results, it suggests that high surface coverage of phosphorus atoms suppress both the $SiH_{4}$ adsorption/reasction and the $GeH_{4}$ adsorption/reaction on the surfaces, and the effect is more stronger on $SiH_{4}$ than on $GeH_{4}$. In a higher $PH_{3}$ partial pressure region, the epitaxial growth is largely controlled by surface coverage effect of phosphorus atoms. The phosphorus surface coverage was slimited at a high $GeH_{4}$ partial pressure because adsorbed Ge atoms effectively suppresses the adsorption of phosphorus atoms.

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Growth of super-grain pentacene by OVPD for AMLCD

  • Jung, Ji-Sim;Cho, Kyu-Sik;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.163-166
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    • 2002
  • We studied the growth of large-grain pentacene film by organic vapour phase deposition. The optimizations of the growth of pentacene are carried out by varying the gas pressure in the reactor and substrate temperature. We found that the grain size depends strongly on the gas pressure in the reactor. The grain size of $20{\mu}m$ has been obtained at the gas pressure of 200 Torr. The film was found to be strongly (001) oriented and its grain size decreases with decreasing the gas pressure.

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The behavior of the early stage of the spark kernel growth at constant pressure surroundings (전기 점화 방식에 있어서 초기 점화핵(Spark kernel) 성장의 정압특성)

  • 김현우;정인석;조경국
    • Journal of the korean Society of Automotive Engineers
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    • v.12 no.4
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    • pp.75-82
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    • 1990
  • To study on the behavior of the early stage of the spark kernel at constant pressure condition, the expressions of the thermal properties such as compressibility factor, thermal conductivity, and electrical conductivity of the high temperature air were newly suggested. The newly suggested simple expressions of the thermal properties of the high temperature air showed good results. Under the assumption of constant pressure, one dimensional numerical analysis was executed by varying surrounding conditions and discharging current of electrical spark. Numerical results show tat high surrounding pressure suppresses the growth of the spark kernel but supplies much electrical energy into the air, on the other hand high surrounding temperature increases the growth of the spark kernel but supplies less electrical energy. Also the result shows that , in case of direct current discharge, deposited electrical energy is able to be expressed in linear function of time approximately.

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Theoretical Modeling of the Kinetics of External Hydrogen Embrittlement (수소 취성 속도에 관한 이론적 모델링)

  • Han, Jeong-Seb;Macdonald, Digby D.
    • Transactions of the Korean hydrogen and new energy society
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    • v.16 no.4
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    • pp.324-333
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    • 2005
  • The kinetics of external hydrogen embrittlememt is considered. The equation of the crack growth rate (CGR) is derived from modification of the model developed by Wilkinson and Vitek. After calculation of hydrogen pressure build-up in the void, the effect of the internal hydrogen pressure on the void growth is added. The CGR is expressed by two terms. One is the term dependent on the critical stress, which is exactly same as Wilkinson and Vitek. The other is term dependent on the pressure of the hydrogen in void.

Zricaloy-4 Oxidation Kinetics in High-Pressure High-Temperature Steam (지르칼로이-4의 고압 고온 수증기에서 산화 반응 속도)

  • 박광헌;김규태
    • Journal of the Korean institute of surface engineering
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    • v.34 no.1
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    • pp.17-24
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    • 2001
  • A model for quantifying the effect of steam pressure on the oxide thickness growth was developed based on the experimental data available. First, empirical equations for the thickness estimation of oxide formed in 1 atm steam were made. The oxide growth kinetics turned out to be dependent on 0.4th power of oxidation time. With an assumption that the transition oxide thickness be only a function of temperature, a model for the enhancement of steam pressure on oxide growth was developed. The enhancement coefficient for steam pressure is calculated to be 0.01~0.013 $bar^{-}$. The developed model generally well explains the experimental data.a.

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Some Crystalline Properties and Growth Condition of BP(100)Epitaxially Grown on Si(100) Substrates (Si(100) 기판위에 에피텍시된 BP(100)의 성장조건 및 결정성)

  • Kim, Chul Ju;Koh, Youn Kyu;Ahn, Chul
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.23 no.6
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    • pp.754-757
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    • 1986
  • Boron monophosphide(100) was eitaxially grown on Si(100) substrate by thermal reaction of B2H6 and PH3 in hydrogen ambient. In an LPCVD system, the growth condition was studied as a function of gas mixture composition and temperature. For the growth temperature of 950\ulcorner in the constant flow rate (partial pressure) of B2H6, n-BP with c(2x2) surface structure was obtained in the PH3 partial pressure of 300-500 cc/min. On the other hand, for the growth temperature of 1080\ulcorner, p-BP with surface structure was observed for the PH3 partial pressure of 400-500cc/min.

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The methodology for developing the 2007 Korean growth charts and blood pressure nomogram in Korean children and adolescents (2007 한국 소아청소년 성장곡선 및 정상혈압 분포 개발 방법론)

  • Lee, Soon Young;Kim, Youn Nam;Kang, Yeon Ji;Jang, Myoung-Jin;Kim, Jinheum;Moon, Jin Soo;Lee, Chong Guk;Oh, Kyungwon;Kim, Young Taek;Nam, Chung Mo
    • Clinical and Experimental Pediatrics
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    • v.51 no.1
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    • pp.26-32
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    • 2008
  • Purpose : This study was to provide the methods of developing the growth charts and the blood pressure nomogram among Korean children and adolescents. Methods : The growth charts were developed based on the data from the national growth surveys for children and adolescents in 1998 and 2005. The percentile charts were developed through two stages. At the first stage, the selected empirical charts were smoothed through several fitting procedures including parametric and non-parametric methods. At the second stage, a modified LMS (lambda, mu, sigma) statistical procedure was applied to the smoothed percentile charts. The LMS procedure allowed to estimate any percentile and to calculate standard deviation units and z-scores. The charts for weight-for-age, height-for-age, BMI-for-age, weight-for-height and head circumference-for-age were developed by sex. Age and normalized height controlled sex-specific nomograms of systolic and diastolic blood pressure were developed by a fixed effect model of general regression using the data from 2005 national growth survey. Results : The significant systemic differences between the percentiles of growth charts and the empirical data were not found. The final output of the study is available from Korean Center for Disease Control and Prevention homepage, http://www.cdc.go.kr/webcdc/. Blood Pressure nomogram was tabulated by height percentiles and age using the regression coefficients analyzed with regression model. Conclusion : 2007 growth charts and blood pressure nomogram were the first products based on the statistical modeling using the national survey data. The further study on the methodology including data collection, data cleaning and statistical modeling for representative growth charts would be needed.

Convection in the growth of zinc telluride single crystal by physical vapor transport

  • Kim, Geug-Tae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.13 no.4
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    • pp.187-198
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    • 2003
  • Zinc selenide (ZnSe) single crystals hold promise for many electro-optics, acousto-optic and green laser generation applications. This material is prepared in closed ampoules by the physical vapor transport (PVT) growth method based on the dissociative sublimation. We investigate the effects of diffusive-convection on the crystal growth rate of ZnSe with a low vapor pressure system in a horizontal configuration. Our results show that for the ratios of partial pressures, s=0.2 and 2.9, the growth rate increases with the Peclet number and the temperature differences between the source and crystal. As the ratio of partial pressures approaches the stoichiometric value of 2, the rate increases. The mass fluk based on one dimensional (1D model) flow for low vapor pressure system fall within the range of the predictions (2D model) obtained by solving the coupled set of conservation equations, which indicates the flow fields would be advective-diffusive. Therefore, the rate and the flow fields are independent of gravity acceleration levels.

Numerical Research about Asymmetric Growth of Cancer, Angiogenesis and Hemodynamics (암의 비대칭적 성장, 혈관생성 및 혈류역학에 대한 수치적 연구)

  • Kim, Y.S.;Shim, E.B.
    • Proceedings of the KSME Conference
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    • 2007.05b
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    • pp.2951-2954
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    • 2007
  • Tumor hemodynamics in vascular state is numerically simulated using pressure node solution. The tumor angiogenesis pattern in our previous study is used for the geometry of vessel networks. For tumor angiogenesis, the equation that governed angiogenesis comprises a tumor angiogenesis factor (TAF) conservation equation in time and space, which is solved numerically using the Galerkin finite element method. A stochastic process model is used to simulate vessel formation and vessel. In this study, we use a two-dimensional model with planar vessel structure. Hemodynamics in vessel is assumed as incompressible steady flow with Newtonian fluid properties. In parent vessel, arterial pressure is assigned as a boundary condition whereas a constant terminal pressure is specified in tumor inside. Kirchhoff's law is applied to each pressure node to simulate the pressure distribution in vessel networks. Transient pressure distribution along with angiogenesis pattern is presented to investigate the effect of tumor growth in tumor hemodynamics.

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