• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.214-220
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• 1998

We have studied the factors influencing the growth rate of TiN deposited from TDEAT using a bubbler. The growth rate of TiN was primarily dependent on the bubbler temperature, deposition temperature, gas delivery line conductance and carrier gases. In addition, the heating of the gas line through which carrier gas was delivered to the bubbler increased the growth rate slightly. Also heating of the delivery gas line between the bubbler and the chamber caused the increase of the growth rate of TiN, Showing the Arrehenius behaviour with the activation energy of 0.2 eV.

• Journal of Microbiology
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• v.43 no.6
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• pp.510-515
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• 2005

The growth of red pepper plants was enhanced by treatment with the rhizobacterium, Bacillus cereus MJ-1. Red pepper shoots showed a 1.38-fold increase in fresh weight (fw) and roots showed a 1.28-fold fw gain. This plant growth-promoting rhizobacterium (PGPR) has been reported to produce gibberellins (GAs). Other GAs-producing rhizobacteria, Bacillus macroides CJ-29 and Bacillus pumilus CJ-69, also enhanced the fw of the plants. They were less effective than B. cereus MJ-1, though. The endogenous GAs content of pepper shoots inoculated with MJ-1 was also higher than in shoots inoculated with CJ-29 or CJ-69. When inoculated with MJ-1, bacterial colonization rate of the roots was higher than that of roots inoculated with CJ-29 or CJ-69. These results support the idea that the plant growth-promoting effect of the bacteria also positively related with the efficiency of root colonization by the bacteria. In addition, we identified the major endogenous GAs of the red pepper as originating from both the early C-13 hydroxylation and the early non C-13 hydroxylation pathways, with the latter being the predominant pathway of GA biosynthesis in red pepper shoots.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.614-614
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• 2013

The effect of graphene growth parameters on the number of graphene layers were systematically studied and growth mechanism on copper substrate was proposed. Parameters that could affect the thickness of graphene growth include the pressure in the system, gas flow rate, growth pressure, growth temperature, and cooling rate. We hypothesis that the partial pressure of both the carbon sources and hydrogen gas in the growth process, which is set by the total pressure and the mole fraction of the feedstock, could be the factor that controls the thickness of the graphene. A synthetic method to produce such large area graphene films with precise thickness from mono- to few-layer would be ideal for chemists and physicists to explore the promising electronic applications of these materials. Here, large-area uniform mono-, bi-, and few-layer graphene films were successfully synthesized on copper surface in selective growth windows, with a finely tuned total pressure and $CH_4$/$H_{2gas}$ ratio. Our findings may facilitate both the large-area synthesis of well-controlled graphene features and wide range of applications of graphene.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.760-763
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• 2007

The properties of carbon nanotube obtained by thermal chemical vapor deposition (CVD) process were investigated as a function of ammonia $(NH_3)$ gas in hydrocarbon gas, Fe catalyst thickness, and growth temperature. Fe catalyst was prepared by DC magnetron sputter and pre-treated with ammonia gas. CNTs were then grown with ammonia-acetylene gas mixture by thermal CVD. The diameter of these CNTs shows a strong correlation with the gas rate, the catalyst film thickness and temperature. From our results, it was found that the factors of grown CNTs positively acted to improve CNT quality.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.914-917
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• 2002

Fabrication of micro carbon structures and patterns using laser-assisted chemical vapor deposition is studied. Argon ion laser and ethylene were used to grow micro carbon rod through pyrolytic decomposition of the reaction gas. The influence of reaction gas pressure and incident laser power on the diameter and growth rate of the micro carbon rod was experimentally investigated. The diameter of micro carbon rods increases linearly with respect to the laser power but is almost independent of the reaction gas pressure. Growth rate of the rod changes little with gas pressure when the laser power remains below 1W. When the carbon rod was grown at near threshold laser power, a very smooth surface is obtained on the rod. By continuously moving the focusing lens in the direction of growth, a micro carbon rod with a diameter of 28 ${\mu}{\textrm}{m}$ and aspect ratio of 100 was fabricated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1096-1100
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• 2008

This report examines the variations on structural properties of $SnO_2$ thin films deposited by using thermal chemical vapor deposition techniques with different oxygen flow gas. TEM showed some of the interface to be atomically rough. The aspects of the boundary shape and growth behavior agree well with the theory of interface growth. The electron diffraction showed that the roughness was changed as the different oxygen flow gas increased. These measurement results suggested that the number of interface facet and abnormal grain growth were related oxygen flow gas.

• Journal of Life Science
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• v.9 no.6
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• pp.677-683
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• 1999

Gamdutang aqua-acupuncture solution (GAS), Gamdutang water-extracted solution (GWS) and Dae-Gamdutang aqua-acupuncture solution (DGAS) were prepared and tested for antitumor activities. It was shown to possess considerable toxicity toward various tumor cell lines. Concentration of 5 $\times$ and 10$\times$ of GAS resulted in more than 70% inhibition of growth in Ehrlich ascites tumor cells (EATC), Hepa1c1c7 and A549. GAS at concentrations of 5$\times$ and 10$\times$ revealed more than 60% inhibition in HeLa. GWS showed more than 50% inhibition of growth with EATC and HeLa at concentrations of 5$\times$ and 10$\times$, respectively. Toxicity assay with GWS in Hepa1c1c7 and A549 revealed that more than 80% inhibition of growth at the concentration of 5$\times$ and 10$\times$. In morphological study, the number of cells were decreased, and the shape of cells was round-form in EATC, Hepa1c1c7, A549, HeLa with GAS.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.163-166
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• 2002

We studied the growth of large-grain pentacene film by organic vapour phase deposition. The optimizations of the growth of pentacene are carried out by varying the gas pressure in the reactor and substrate temperature. We found that the grain size depends strongly on the gas pressure in the reactor. The grain size of $20{\mu}m$ has been obtained at the gas pressure of 200 Torr. The film was found to be strongly (001) oriented and its grain size decreases with decreasing the gas pressure.

• Journal of the Korean institute of surface engineering
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• v.44 no.3
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• pp.75-81
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• 2011

Growth behaviors of iron-nitride on S45C steels at low pressure gas nitriding were examined. Surfaces of the steels covered with fine and porous oxide during the pre-oxidation using $N_2O$ gas. Well faceted particles connected with them were observed after 1 min nitriding. They grew steadily and filled inter-pores during additional nitriding process. From the X-ray diffraction analysis, ${\gamma}'$-iron nitride was dominantly formed at the initial stage but the amount of ${\varepsilon}$-iron nitride was rapidly increased as nitriding treatment time. The porous layer was formed on the particles and thickened up to half of nitride layer after 60 min nitriding. The observed growth behaviors were discussed in internal stress related with volume expansion involved in transforming from iron to iron-nitrides.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.262-267
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• 2015

We demonstrate the growth of single-walled carbon nanotubes (SWNTs) using ethylene-based chemical vapor deposition (CVD) and ferritin-induced catalytic particles toward growth temperature reduction. We first optimized the gas composition of $H_2$ and $C_2H_4$ at 500 and 30 sccm, respectively. On a planar $SiO_2$ substrate, high density SWNTs were grown at a minimum temperature of $760^{\circ}C$. In the case of growth using nanoporous templates, many suspended SWNTs were also observed from the samples grown at $760^{\circ}C$; low values of $I_D/I_G$ in the Raman spectra were also obtained. This means that the temperature of $760^{\circ}C$ is sufficient for SWNT growth in ethylene-based CVD and that ethylene is more effective that methane for low temperature growth. Our results provide a recipe for low temperature growth of SWNT; such growth is crucial for SWNT-based applications.