• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.12
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• pp.1610-1616
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• 1995

The (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$(0.05.leq.x.leq.0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[.deg. C] in a reducing atmosphere (N$_{2}$ gas). After being fired in a reducing atmosphere, metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100[.deg. C] for 2 hours. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant. The results of the capacitance-valtage measurements indicated that the grain boundary was composed of the continuous insulating layers. The capacitance is almost unchanged below about 20[V], but decreased slowly over 20[V]. The conduction mechanism of the specimens observed in the temperature range of 25~125[.deg. C], and is divided into three regions having different mechanism as the current increased: the region I below 200[V/cm] shows the ohmic conduction. The region II between 200[V/cm] and 2000[V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000[V/cm] is dominated by the tunneling effect.ct.

• Interaction and multiscale mechanics
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• v.4 no.3
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• pp.207-217
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• 2011

International efforts have focused recently on the development of tungsten surfaces that can intercept energetic ionized and neutral atoms, and heat fluxes in the divertor region of magnetic fusion confinement devices. The combination of transient heating and local swelling due to implanted helium and hydrogen atoms has been experimentally shown to lead to severe surface and sub-surface damage. We present here a computational model to determine the relationship between the thermo-mechanical loading conditions, and the onset of damage and failure of tungsten surfaces. The model is based on thermo-elasticity, coupled with a grain boundary damage mode that includes contact cohesive elements for grain boundary sliding and fracture. This mechanics model is also coupled with a transient heat conduction model for temperature distributions following rapid thermal pulses. Results of the computational model are compared to experiments on tungsten bombarded with energetic helium and deuterium particle fluxes.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.94.2-94
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• 2002

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.23-29
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• 1989

A physical model that characterizes the field effect of the polycrystalline thin film transistor(TFT) is developed. The model discribes grains as discrete single crystal transistors and grain boundaries as insulated layers having the potential barrier, Thus TFT is considered as serial connection of single crystal transistors and insulators. In the model, the currents in the grain and the grain boundary is calculated using gradual channel approximation and tunneling theory, respetively. By comparing computed I-V characteristics with measured I-V characteristics of CdSe TFT's, potential and electric field distributions in the channel are observed and the validity of the conduction model proposed in this paper is confirmed.

• Journal of the Korean Ceramic Society
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• v.39 no.7
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• pp.635-641
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• 2002

Electrical conduction of $SrZrO_3$ doped with $Y_2O_3$ was measured as a function of gas atmosphere and temperature by impedance spectroscopy. Hydrogen dissolution, due to an enhanced driving force in the presence of oxygen, results in protonation by water incorporation. Proton conductivity increased with water vapor pressure, ${P_w}^{1/2}$. In the pure hydrogen atmosphere, the dissolution of hydrogen,$H_2(g)=2H_{i}$ +2e', is supposed to be driven by a reduced activity of electrons, ascribable to their trapping in oxygen vacancies. The activation energy of electrical conductivity was 50 kJ/mol, in wet argon atmosphere in the temperature range of $600~900^{\circ}C$, similar to those reported for proton conduction in the literature. Grain boundary effect in proton conduction was substantial in the 10% doped case at temperatures lower than $700^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.318-322
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• 1997

The (Sr$_{l-x}$.Ca$_{x}$)TiO$_3$(0.05$\leq$x$\leq$0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[$^{\circ}C$] in a reducing atmosphere($N_2$gas). After being fired in a reducing atmosphere, metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100[$^{\circ}C$] for 2 hours and cooled to room temperature. The grain boundary was composed of the continuous insulating layers. The capacitance changes slowly and almost linearly in the temperature region of -30~+85[$^{\circ}C$]. The capacitance characteristics appears a stable value within $\pm$10[%]. The conduction mechanism of the specimens observed in the temperature range of 25~125[$^{\circ}C$], and is divined into three regions haying different mechanism as the current increased: the region I below 230[V/cm] shows the ohmic conduction. The region II can be explained by the Poole-Frenkel emission theory, and the region III is dominated by the tunneling effect.ect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.962-968
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• 2011

In this study, we investigated the effects of Mn dopant (0.1~3.0 at% $Mn_3O_4$ sintered at 1000$^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and grain boundary properties of ZnO, ZM(0.1~3.0) using admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). As a result, three kinds of defect were found below the conduction band edge of ZnO as 0.09~0.14 eV (attractive coulombic center), 0.22~25 eV ($Zn^{{\cdot}{\cdot}}_i$), and 0.32~0.33 eV ($V^{\cdot}_o$). The oxygen vacancy increased with Mn doping. In ZM, an electrically single grain boundary as double Schottky barrier was formed with 0.82~1.0 eV of activation energies by IS & MS. We also find out that the barriers of grain boundary of Mn-doped ZnO (${\alpha}$-factor=0.13) were more stabilized and homogenized with temperature compared to pure ZnO.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.111-116
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• 2001

Poly-Si TFT's(Polysilicon thin filmtransistors) have been actively studied due to their applications in active matrix liquid crystal displays and active pull-up devices of CMOS SRAM's. For such applications, the leakage current has to be in the range of sub-picoampere. However, poly-Si TFT's suffer from anomalous high leakage currents, which is attributed to the emission of the traps present at gain boundaries in the drain junction. The leakage current has been analyzed by the field emission via grain-boundary traps and thermionic field emission over potential barrier located at the grain boundary. We found that the models proposed before are not consistent with the experimental results at far as drain-offset poly-Si TFT's we fabricated concern. In this paper, leakage current of drain-offset poly-Si TFT's with different offset lengths was studied. A conduction model based on the thermionic emission of the tunneling electrons is developed to identify the leakage mechanism. It was found that the effective grain size of the drain-offset region is important factor in the leakage current. A good agreement between experimental and simulated results of the leakage current is obtained.

• Journal of Powder Materials
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• v.29 no.6
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• pp.485-491
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• 2022

Lithium lanthanum titanium oxide (LLTO) is a promising ceramic electrolyte because of its high ionic conductivity at room temperature, low electrical conductivity, and outstanding physical properties. Several routes for the synthesis of bulk LLTO are known, in particular, solid-state synthesis and sol-gel method. However, the extremely low ionic conductivity of LLTO at grain boundaries is one of the major problems for practical applications. To diminish the grain boundary effect, the structure of LLTO is tuned to nanoscale morphology with structures of different dimensionalities (0D spheres, and 1D tubes and wires); this strategy has great potential to enhance the ion conduction by intensifying Li diffusion and minimizing the grain boundary resistance. Therefore, in this work, 0D spherical LLTO is synthesized using ultrasonic spray pyrolysis (USP). The USP method primarily yields spherical particles from the droplets generated by ultrasonic waves passed through several heating zones. LLTO is synthesized using USP, and the effects of each precursor and their mechanisms as well as synthesis parameters are analyzed and discussed to optimize the synthesis. The phase structure of the obtained materials is analyzed using X-ray diffraction, and their morphology and particle size are analyzed using field-emission scanning electron microscopy.

• Proceedings of the Korea Crystallographic Association Conference
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• 2007.11a
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• pp.18-18
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• 2007