Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Defects and Grain Boundary Properties of ZnO with Mn3O4 Contents

Mn3O4 함량에 따른 ZnO의 결함과 입계 특성

  • Hong, Youn-Woo (Future Convergence Ceramic Division, Korea Institute of Ceramic Engineering and Technology) ;
  • Shin, Hyo-Soon (Future Convergence Ceramic Division, Korea Institute of Ceramic Engineering and Technology) ;
  • Yeo, Dong-Hun (Future Convergence Ceramic Division, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Jin-Ho (School of Materials Science and Engineering, Kyungpook National University)
  • 홍연우 (한국세라믹기술원 미래융합세라믹본부) ;
  • 신효순 (한국세라믹기술원 미래융합세라믹본부) ;
  • 여동훈 (한국세라믹기술원 미래융합세라믹본부) ;
  • 김진호 (경북대학교 신소재공학부)
  • Received : 2011.10.21
  • Accepted : 2011.11.11
  • Published : 2011.12.01
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Abstract

In this study, we investigated the effects of Mn dopant (0.1~3.0 at% $Mn_3O_4$ sintered at 1000$^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and grain boundary properties of ZnO, ZM(0.1~3.0) using admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). As a result, three kinds of defect were found below the conduction band edge of ZnO as 0.09~0.14 eV (attractive coulombic center), 0.22~25 eV ($Zn^{{\cdot}{\cdot}}_i$), and 0.32~0.33 eV ($V^{\cdot}_o$). The oxygen vacancy increased with Mn doping. In ZM, an electrically single grain boundary as double Schottky barrier was formed with 0.82~1.0 eV of activation energies by IS & MS. We also find out that the barriers of grain boundary of Mn-doped ZnO (${\alpha}$-factor=0.13) were more stabilized and homogenized with temperature compared to pure ZnO.

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References

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