• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1574-1576
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• 2003

Carbon nanotubes (CNTs) were grown on the TiN-coated silicon substrate with different thickness of Ni and Co catalysts layer at $600^{\circ}C$ using inductively coupled plasma-chemical vapor deposition (ICP-CVD). The Ni and Co catalysts were formed using the RF magnetron sputtering system with various deposition times. It was found that the growth of CNTs was strongly influenced by the surface morphology of Ni and Co catalysts. With increasing deposition time, the thickness of catalysts increased and the grain boundary size of catalysts increased. The surface morphology of catalysts and CNTs were elucidated by SEM. The Raman spectrum further confirmed the graphitic structure of the CNTs. The turn-on field of CNTs grown on Ni and Co catalysts was about 2.7V/pm and 1.9V/pm respectively. Field emission current density of CNTs grown on Ni and Co catalysts was measured as $11.67mA/cm^2$ at $5.5V/{\mu}m$ and $1.5mA/cm^2$ at $5.5V/{\mu}m$ respectively.

• Korean Journal of Metals and Materials
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• v.56 no.12
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• pp.845-853
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• 2018

To understand the effect of microstructural factors (i.e., the size of ${\alpha}$ phase, equiaxed vs bimodal structure) on high cycle fatigue (HCF) and fatigue crack propagation (FCP) behaviors of mill-annealed Ti-6Al-4V (Ti64) alloy, three specimens of EQ (equiaxed)-8 (8 indicates the size of ${\alpha}$ grain), BM (bimodal)-8, and BM-16 were studied. The uniaxial HCF and FCP tests were conducted at an R ratio of 0.1 under sinusoidal fatigue loading. The microstructural influence (i.e., EQ vs BM) was not significant on the tensile properties of mill-annealed Ti64 alloy, and showed an increase in tensile strength and elongation with decreasing gauge thickness from 50 mm to 1.3 mm. The microstructure, on the other hand, affected the resistance to HCF substantially. It was found that the EQ structure in mill-annealed Ti64 has better resistance to HCF than the BM structure, as a result of different crack initiation mechanism. Unlike HCF behavior, the effect of microstructural features on the FCP behavior of mill-annealed Ti64 was not significant. Among the three specimens, BM-16 specimen showed the highest near-threshold ΔK value, probably because it had the greatest slip reversibility with large ${\alpha}$ grains. The effect of microstructural factors on the HCF and FCP behaviors of mill-annealed Ti64 alloy are discussed based on fractographic and micrographic observations.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.233-236
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• 2000

The structural, electrical and chemical characteristics of Al alloy thin film with low impurity concentrations AlW deposited by using dc magnetron sputtering deposition are investigated for the applications as data bus line in the TFT-LCD panel. The deposited thin films show the decrease of resistivity and the increase of grain size after the RTA at $300^{\circ}C$ for 20 min.. Moreover, the resistivity of AlW does not show appreciable grain size dependence after RTA. It is concluded that the decrease of resistivity after RTA is due to the increase of grain size. The annealed AlW is found to be hillock free. And for investigating chemical attack in TFT-LCD etching processing the electric potential of AlW alloy for Ag/AgCl were investigated by cyclic voltammetry. When W wt.% of AlW alloy was higher than about 3%, the electric potential of AlW was more positive than ITO's. Therefore AlW alloy thin film can be propose to use for data bus line.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.6 no.1
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• pp.27-34
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• 2001

To investigate the processes governing the distribution of elements in the tidal flat, thirty-eight sediment samples collected from the Saemangeum tidal flat of the Korean west coast were analyzed for their contents of major (Al, Fe, Mg, Ca, Na, K, Ti) and trace (P, Mn, Ba, Sr, V, Cr, Co, Cu, Ni, Zn, Pb) elements. Most elements showed generally lower contents compared to data published for other tidal flats of Korea, and the effect of anthropogenic input could not be recognized in the sediments. The relative abundance and distribution of most of the elements varied significantly with the grain size of sediments. High contents of Al, Fe, Mg, Ti, P, Mn, V, Co, Cr, Cu, Ni and Zn were found in the finer sediments in the upper tidal flat of the study area, suggesting that tidal sedimentation processes play an important role in controlling the distribution of these elements. However, sediment grain size does not impose any significant effect on the abundance and distribution of Ca, Na, K, Ba, Sr and Pb. It appears that the clastic mineralogy in the coarse-grained fractions is the dominant factor determining the distribution of these elements in the study area.

• Journal of the Korean Ceramic Society
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• v.51 no.6
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• pp.612-617
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• 2014

The microstructure, nonlinear properties, and impulse clamping characteristics of Pr/Co/Cr/Al co-doped zinc oxide ceramics were investigated with various contents of $Er_2O_3$. Increasing $Er_2O_3$ content increased the density of the sintered pellets from 5.69 to $5.83g/cm^3$, and decreased the average grain size from 10.6 to $6.5{\mu}m$. With increased $Er_2O_3$ content, the breakdown field increased from 2318 to 4205 V/cm, and the nonlinear coefficient increased from 19.4 to 40.2. The clamp characteristics were improved with the increase of the content of $Er_2O_3$. The varistors doped with 2.0 mol% exhibited the best clamp characteristics, in which the clamp voltage ratio was 1.40-1.73 at 1-50 A in an impulse current.

• Journal of Microbiology and Biotechnology
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• v.17 no.10
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• pp.1629-1637
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• 2007

An immunochromatography (ICG) strip test using a nanocolloidal gold-antibody probe was developed and optimized for the rapid detection of aflatoxin B1 (AFB1). A monoclonal antibody specific to AFB1 was produced from the cloned hybridoma cell (AF78), coupled with nanocolloidal gold, and distributed on the conjugate pad of the ICG strip test. The visual detection limit of the ICG strip test was 0.5 ng/ml, and this method showed a cross-reaction to aflatoxin B2, G1, and G2. In total, 172 grain and feed samples were collected and analyzed by both the ICG strip test and HPLC. The results of the ICG strip test showed a good agreement with those obtained by HPLC. These results indicated that the ICG strip test has a potential use as a rapid and cost-effective screening tool for the determination of AFB1 in real samples and could be applied to the preliminary screening of mycotoxin in food and agricultural products, generating results within 15 min without complicated steps.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.941-948
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• 2009

The present study aims at the examination of the effects of 1 mol% NiO addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by density, XRD, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Ni-doped ZBS (ZBSN) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered in ZBS (Sb/Bi=1.0) by Ni doping. The reproduction of pyrochlore was suppressed by the addition of Ni in ZBS. Between two polymorphs of $Zn_7Sb_2O_{12}$ spinel ($\alpha$ and $\beta$), microstructure of ZBSN (Sb/Bi=0.5) composed of a-spinel was more homogeneous than $Sb/Bi{\geq}1.0$ composed of $\beta$-spinel phase. In ZBSN, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha\;=\;6{\sim}11$) and independent on microstructure according to Sb/Bi ratio. Doping of Ni to ZBS seemed to form ${V_0}^{\cdot}$ (0.33 eV) as dominant bulk defect. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature.

• Korean Journal of Materials Research
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• v.2 no.6
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• pp.452-460
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• 1992

Effects of the microalloyed elements, temperatures and cooling rates on the strength and toughness of the medium carbon microalloyed hot forging steels obtained by air cooling(A.C.) method and the low carbon microalloyed forging steels by direct quenching(D.Q.) method were investigated. Combined additions of V+Nb produced the optimum combination of strength and toughness with ferrite-pearlite structure of the medium carbon steel by the A.C. method. 831MPa in UTS and 52.1J in toughness were obtained for 0.40c+0.12V+0.07Nb. It was martensite structure for the low carbon steel by the D.Q. method. The highest UTS and toughness obtained by Mo additions were 855MPa and 108j by 0.12C+0.10V+0.03Nb+1.13Mo respectively. Especially, the toughness of the low carbon steel was twice better than that of the medium carbon steel. 110$0^{\circ}C$was more appropriate than 120$0^{\circ}C$ for the reheating and forging temperature and 1.$2^{\circ}C$ /s was the best cooling rate from the viewpoint of the strength and toughness. Multiple regression analysis was used to quantify the influence of the microalloyed elements, temperatures and cooling rates on the strength, toughness, austenite grain size, and the pearlite interlamellar spacing.

• Korean Journal of Materials Research
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• v.34 no.4
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• pp.185-193
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• 2024

In this study, NASICON-type Li_1+XGa_XTi_2-X(PO₄)₃ (x = 0.1, 0.3 and 0.4) solid-state electrolytes for all-solid-state batteries were synthesized through the sol-gel method. In addition, the influence on the ion conductivity of solid-state electrolytes when partially substituted for Ti⁴⁺ (0.61Å) site to Ga³⁺ (0.62Å) of trivalent cations was investigated. The obtained precursor was heat treated at 450 ℃, and a single crystalline phase of Li_1+XGa_XTi_2-X(PO₄)₃ systems was obtained at a calcination temperature above 650 ℃. Additionally, the calcinated powders were pelletized and sintered at temperatures from 800 ℃ to 1,000 ℃ at 100 ℃ intervals. The synthesized powder and sintered bodies of Li_1+XGa_XTi_2-X(PO₄)₃ were characterized using TG-DTA, XRD, XPS and FE-SEM. The ionic conduction properties as solid-state electrolytes were investigated by AC impedance. As a result, Li_1+XGa_XTi_2-X(PO₄)₃ was successfully produced in all cases. However, a GaPO₄ impurity was formed due to the high sintering temperatures and high Ga content. The crystallinity of Li_1+XGa_XTi_2-X(PO₄)₃ increased with the sintering temperature as evidenced by FE-SEM observations, which demonstrated that the edges of the larger cube-shaped grains become sharper with increases in the sintering temperature. In samples with high sintering temperatures at 1,000 ℃ and high Ga content above 0.3, coarsening of grains occurred. This resulted in the formation of many grain boundaries, leading to low sinterability. These two factors, the impurity and grain boundary, have an enormous impact on the properties of Li_1+XGa_XTi_2-X(PO₄)₃. The Li_1.3Ga_0.3Ti_1.7(PO₄)₃ pellet sintered at 900 ℃ was denser than those sintered at other conditions, showing the highest total ion conductivity of 7.66 × 10^-5 S/cm at room temperature. The total activation energy of Li-ion transport for the Li_1.3Ga_0.3Ti_1.7(PO₄)₃ solid-state electrolyte was estimated to be as low as 0.36 eV. Although the Li_1+XGa_XTi_2-X(PO₄)₃ sintered at 1,000 ℃ had a relatively high apparent density, it had less total ionic conductivity due to an increase in the grain-boundary resistance with coarse grains.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.