• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.949-955
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• 2009

In this study, we investigated the effects of Cr dopant (1.0 at% $Cr_2O_3$ sintered at $1000^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and interface state levels of ZnO using dielectric functions ($Z^*$, $M^*$, $Y^*$, $\varepsilon^*$, and $tan{\delta}$), admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). For the identification of the bulk trap levels, we examine the zero-biased admittance spectroscopy and dielectric functions as a function of frequency and temperature. Impedance and electric modulus spectroscopy is a powerful technique to characterize grain boundaries of electronic ceramic materials as well. As a result, three kinds of bulk defect trap levels were found below the conduction band edge of ZnO in 1.0 at% Cr-doped ZnO (Cr-ZnO) as 0.11 eV, 0.21 eV, and 0.31 eV. The overlapped defect levels ($Zn^{..}_i$ and $V^{\cdot}_0$) in admittance spectra were successfully separated by the combination of dielectric function such as $M^*$, $\varepsilon^*$, and $tan{\delta}$. In Cr-ZnO, the interfacial state level was about 1.17 eV by IS and MS. Also we measured the resistance ($R_{gb}$) and capacitance ($C_{gb}$) of grain boundaries with temperature using impedance-modulus spectroscopy. It have discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z"-logf plots with temperature.

• Journal of Advanced Marine Engineering and Technology
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• 제29권8호
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• pp.938-945
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• 2005

The microstructure evolution in hot forging process is composed of dynamic recrystallization during deformation as well as grain growth during dwell time. Therefore, the control of forging parameters such as strain, strain rate. temperature and holding time is important because the microstructure change in hot working affects the mechanical properties. Modeling equations are developed to represent the flow curve. grain size. recrystallized volume fraction and grain growth phenomena by various tests. The developed modeling equations were combined with thermo-viscoplastic finite element modeling to predict the microstructure change evolution during hot forging process. The large exhaust valve spindle (head diameter of 512mm) was simulated by closed die forging with hydraulic press and cooled in air after forging. The preform was heated to each 1080 and 1150$^{\circ}C$. Numerical calculation was performed by DEFORM-2D. a commercial finite element code. Heat transfer can be coupled with the deformation analysis in a non-isothermal deformation analysis. In order to obtain the fine and homogeneous microstructure and good mechanical properties in forging. the FEM would become a useful tool in the simulation of the microstructure development. In forging, appropriate temperature, strain and strain rate and rapid cooling are required to obtain the fine grain microstructure The optimal forging temperature and effective strain range of Nimonic 80A for large exhaust valve spindle are about 1080$\∼$l120$^{\circ}C$ and 150$\∼$200$\%$.

• 한국진공학회지
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• 제16권6호
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• pp.433-438
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• 2007

열처리 온도에 따른 Au 결정립 크기의 변화와 표면 거칠기 및 전기전도도를 연구하기 위해 dc 마그네트론 스퍼터링법을 사용하여 Si(111) 또는 Si(100) 기판위에 Au (30nm) 와 Ta (5 nm)/Au (30 nm) 를 증착하였다. 열처리 온도가 증가함에 따라 시료의결정립 크기가 증가하였고, 박막 표면 거칠기 또한 증가함을 확인하였다. Si/Au보다Si/Ta/Au구조에서 결정립 크기가 증가하였고 표면거칠기는 감소되었으며 Si(111)기판보다 Si(100) 기판위의 Ta/Au구조에서 전기 저항이 감소되었다. Si(100)/Au구조에 5 nm 두께의 Ta의 buffer layer를 삽입하여 표면 거칠기 정도를 낮춤과 동시에 열처리 온도를 적절히 조절하여 결정립 크기를 증가시킴으로서 전도성이우수한 양질의 Au 박막을 얻을 수 있었다.

• 한국전기전자재료학회논문지
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• 제21권8호
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• pp.738-748
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• 2008

In this study, it has been investigated on the changing behavior of electrical properties in $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0 and 0.5) ceramics. The samples were prepared by conventional ceramic process, and then characterized by I-V, C-V curve plots, impedance and modulus spectroscopy (IS & MS) measurement. The electrical properties of ZBS systems were strongly dependent on Sb/Bi. In ZBS systems, the varistor characteristics were deteriorated noticeably with increasing Sb/Bi and the donor density and interface state density were increased with increasing Sb/Bi. On the other hand, we observed that the grain boundary reacted actively with the ambient oxygen according to Sb/Bi ratio. Especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature. Besides, the increased pyrochlore and $\beta$-spinel phase with Sb/Bi ratio caused the distributional inhomogeneity in the grain boundary barrier height and the temperature instability. To the contrary, the grain boundary layer was relatively homogeneous and more stable to temperature change and kept the system highly nonlinear at high Bi-rich phase contents.

• 대한기계학회논문집A
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• 제25권7호
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• pp.1064-1072
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• 2001

It is very important to evaluate material degradation like temper and carbide embrittlements to secure the reliable and efficient operational conditions and to prevent brittle failure in service. The extent of material deterioration can be accurately evaluated by mechanical test such as impact test or creep test. But it is almost impossible to sample a large specimen from in-service plants. Thus, the material degradation evaluation by a non-destructive method is earnestly required. Recently the non-destructive test technique which uses the grain boundary etching characteristics owing to the variation of material structures has been proposed. However the program for material degradation evaluation using the grain boundary etching method(GEM) in Windows 98 domain doesnt be developed now. The aims of this paper are to develop the program and to complete the new master curve equations for the evaluation of material degradation on in-serviced high temperature components.

• 열처리공학회지
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• 제21권6호
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• pp.293-299
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• 2008

In order to provide with fundamental data of the wrought Mg alloy for press forging, the effect of annealing temperature on the microstructure, texture development and tensile properties is studied in a commercial AZ31B Mg alloy sheet. Basal texture i.e. $(0001){\pm}5^{\circ}$[21$\bar{3}$0] is developed in a commercial AZ31B Mg sheet, and the texture is not changed considerably by annealing over $400^{\circ}C{\times}30min$, while (10$\bar{3}$0) component with high intensity can be observed due to abnormal grain growth. When the sheet is tensile-deformed with RD, $45^{\circ}$ and TD directions at room temperature, fracture strains are given by 25.8, 21.4 and 11.9% in the order of RD, $45^{\circ}$ and TD directions, respectively. With increasing annealing temperature up to $450^{\circ}C{\times}30min$, little change in mean grain size can be revealed by annealing below $300^{\circ}C{\times}30min$ but an abnormal grain growth, where some grains become significantly coarser than the rest, occurs by annealing above $400^{\circ}C{\times}30min$. The maximum tensile strain of around 25% is obtained by annealing below $300^{\circ}C{\times}30min$, but it is abruptly decreased to 16% by annealing above $400^{\circ}C{\times}30min$ owing to intergranular fracture of abnormal grown grains.

• 한국작물학회:학술대회논문집
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• 한국작물학회 2017년도 9th Asian Crop Science Association conference
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• pp.43-43
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• 2017

During grain filling period, rice is affected by many environmental factors; including temperature, water, radiation and soil nutrition condition. In future climate, greater shading and heat tolerance will be required in rice. In this study, the effect of shading and high temperature on spikelet sterility was conducted on fourteen Vietnamese cultivars. Field experiments were studied in 2015 and 2016 to evaluate the response of Vietnamese cultivars under high temperature during grain filling stage. The high temperature and shading were applied by closing two sides of growth chamber and covered by a black cloth (50% reduced solar radiation) under the field condition after the first cultivar heading. The sterility increased significantly under high temperature and shading. The highest percentage sterile spiketlets was observed in 'Jasmine 85' (71.7%) under shading and in 'OM4900' (53.4%) under high temperature in 2015 and 2016, respectively. Among the treatments, the percentage of sterile spekelets in Vietnamese cultivars under shading was highest which was 54.9% and 41.8% in 2015 and 2016, respectively. Yield components reduced significantly in both of shading and high temperature. Corresponding with significantly decrease in yield components, the yield in high temperature and shading decreased strongly in both 2015 and 2016.

• 연구논문집
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• 통권22호
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• pp.115-125
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• 1992

Mechanical properties and microstructure were investigated on vacuum induction melted $Fe_3A1$base alloys of $DO_3$ structure. Specal emphasis were put on the effect of alloy chemistry, grain size and process(rolling, directional solidification) on mechanical properties of Fe-22.5-39at.%Al at elevated temperature between room temperature and $800^{\circ}C$. grain size of as-cast alloys is refined by rolling from 1mm to $80\mum$. Tensile strength of Fe-24.lat.%AI was about 404MPa at the critical ordering temperature, and the fracture strain of the alloy was 1-2% at room temperature. An inverse temperature dependence of the strength is noticed as-cast $Fe_3A1$. The presence of Cr and Zr do not affect the room temperature ductility and high temperature strength. Fracture strain of directionally solidified(DS) $Fe_3A1$ is about 1%at room temperature, but is about 60%at. $T_C$(550^{\circ}C)$. Tensile strength of DS alloy is lower than that of as-cast alloy at $530^{\circ}C$ and $430^{\circ}C$. Failure mode at room temperature varies from transgranular fracture to intergranular fracture with the addition of Al. the failure mode also varies from mixed(transgranular+ intergranular) mode between room temperature and $500^{\circ}C$ to intergranular mode above $550^{\circ}C$

• 한국작물학회지
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• 제47권1호
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• pp.29-35
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• 2002

This study was carried out to investigate the characteristics of shattering habit and germination of offtype rice plants collected in Korea which were classified into seven groups based on grain characteristics. In the long-grain red rice group, the short-grain red rice group, the long-grain normal rice group, and the long-grain waxy rice group, the tensile strength of grain and primary rachis branch was relatively low and the fiber cell of the primary rachis branch was short. Characteristics of shattering-related traits and germination in relation to grain and esterase isozyme zymogram type of off-type rice plants. In most lines of the extremely late and sterile rice group, the tensile strength of grain was low, while that of primary rachis branch was high, and the fiber cell was long. However, in the type 1 esterase isozyme zymogram(EIZ) lines among the long-grain normal rice group and the type 6 and 5+6 EIZ plants among the extremely late and sterile rice group, the tensile strength of grain was relatively higher. The long-grain waxy rice group and the type 3 EIZ lines among the long-grain red rice group, showed higher germinability than did cultivars which are known to germinate well even in low-temperature. The other off-type rice group, except for the short-grain waxy rice group and type 1 and 7 EIZ lines among the long-grain normal rice group, had higher germination speed than that of the cultivars.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.