• Title/Summary/Keyword: Grain Morphology

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Nanocrystalline Materials-an Overview

  • Suryanarayana, C.
    • Journal of Powder Materials
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    • v.3 no.4
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    • pp.233-245
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    • 1996
  • Nanocrystalline materials, with a grain size of typically <100 nm, are a new class of materials with properties vastly different from and often superior to those of the conventional coarse-grained materials. These materials can be synthesized by a number of different techniques and the grain size, morphology, and composition can be controlled by controlling the process parameters. In comparison to the coarse-grained materials, nanocrystalline materials show higher strength and hardness, enhanced diffusivity, improved ductility/toughness, reduced, density, reduced elastic modulus, higher electrical resistivity, increased specific heat, higher coefficient of thermal expansion, lower thermal conductivity, and superior soft and hard magnetic properties. Limited quantities of these materials are presently produced and marketed in the US, Canada, and elsewhere. Applications for these materials are being actively explored. The present article discusses the synthesis, structure, thermal stability, properties, and potential application of nanocrystalline materials.

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Effect of Initial Microstructures on Hot Formability of Ti-10V-2Fe-3Al Alloy (Ti-10V-2Fe-3Al 합금의 열간성형성에 미치는 초기미세조직의 영향)

  • 신동혁
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 1999.03b
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    • pp.153.2-158
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    • 1999
  • A study has been made to investigate how the fomability of Ti-10V-2Fe-3Al alloy is related to the initial microstructure and process variables such as temperature and strain rate. It has been found that the deformation resistance at high temperature is increased with the increase in the thickness of grain boundary a (GB)a and/or acicular a phase and however the effect of a morphology on the hot formability is considered insignificant due to the breakage of GB a and/or acicular a into several equiaxed a particles

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Effect of Inductively Coupled Plasma (ICP) Power on the Properties of Ultra Hard Nanocrystalline TiN Coatings (유도결합 플라즈마 파워변화에 따른 초경도 나노결정질 TiN 코팅막의 물성변화)

  • Chun, Sung-Yong
    • Journal of the Korean Ceramic Society
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    • v.50 no.3
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    • pp.212-217
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    • 2013
  • Ultra hard TiN coatings were fabricated by DC and ICP (inductively coupled plasma) magnetron sputtering techniques. The effects of ICP power, ranging from 0 to 300 W, on the coating microstructure, crystallographic, and mechanical properties were systematically investigated with FE-SEM, AFM, HR-XRD and nanoindentation. The results show that ICP power has a significant influence on the coating microstructure and mechanical properties of TiN coatings. With an increasing ICP power, the film microstructure evolves from an apparent columnar structure to a highly dense one. Grain sizes of TiN coatings decreased from 12.6 nm to 8.7 nm with an increase of the ICP power. A maximum nanohardness of 67.6 GPa was obtained for the coatings deposited at an ICP power of 300 W. The crystal structure and preferred orientation in the TiN coatings also varied with the ICP power, exerting an effective influence on film nanohardness.

MATERIAL AND ELECTICAL CHARACTERISTICS OF COPPER FILMS DEPOSITED BY MATAL-ORGANIC CHEMICAL TECHNIQUE

  • Cho, Nam-Ihn;Park, Dong-Il;Nam, H. Gin
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.803-808
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    • 1996
  • Material and electrical characteristies of copper thin films prepared by metal organic chemical vapor deposition (MOCVD) have been investigated for interconnection applications in ultra large scale integration circuits (ULSI). The copper films have been deposited a TiN substrates using a metal organic precursor, hexafluoro acetylacetonate trimethyvinylsilane copper, VTMS(hfac)Cu (I). Deposition rate, grain size, surface morphology, and electrical resistvity of the copper films have been measuredfrom samples prepared at various experimental conditions, which include substrate temperature, chamber pressure, and carrier gas flow rate. Results of the experiment showed that the electrical property of the copper films is closely related to the crystallinity of the films. Lowest electrical resistivity, $2.4{\mu}{\Omega}.cm$ was obtained at the substrate temperature of $180^{\circ}C$, but the resistivity slightly increased with increasing substrate temperature due to the carbon content along the copper grain boundaries.

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Electrical Characteristics and Microstructure of Thin Films $BaTiO_3$ depending on The Sintering Temperature ($BaTiO_3$계 박막의 소결온도에 따른 미세구조와 전기적 특성)

  • Kim, D.K.;Jeon, J.B.;Park, C.B.;Song, M.J.;Kang, Y.C.;Park, H.A.;Soo, B.M.;Kim, T.W.;Kang, D.Y.
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1573-1576
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    • 1997
  • Thin films of $BaTiO_3$ system were prepared by radio frequency (rf)/dc magnetron sputtering method. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat - treatment temperatures. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films shows that the specimen heat treated in between 900 and 1100[$^{\circ}C$] shows a grain growth. At 1100[$^{\circ}C$], the specimen stops grain-growing and becomes a crystal. A resistivity-temperature characteristics of the specimen depends on the doping concentrations of Mn.

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The Study of Solderability according to Chemical Analysis in Plating Process (도금공정의 액 분석에 따른 Solderability 개선 연구)

  • 이준호
    • Journal of the Korean institute of surface engineering
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    • v.36 no.2
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    • pp.168-175
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    • 2003
  • The purpose of solder plating on chip external electrode is to provide a proper solderability to chips on PCB's. The quantitative or qualitative analysis of solderability has been performed by destructive methods, reflow or flow. Evidently, the solderability tends to depend on the grain structure which is varied with additives. Research on the feasibility of employing electrochemical techniques to characterize the solderability of electroplated tin - lead, with respect to the additives, was non destructively performed. The deposit morphology and the polarization behavior of electrolytes containing proprietary additives were evaluated to investigate the soldering degradation. The plated panels from synthetic electrolyte were analyzed according to % Sn, plating thickness, deposit appearance, grain structure, solderability and cyclic voltammetry.

Optical properties of the polycrystalline CdSe thin films grown by the electron-beam evaporation technique (전자선 증착기술에 의해 성장된 다결정 CdSe 박막의 광학적 특성)

  • 김화민
    • Journal of the Korean Vacuum Society
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    • v.9 no.1
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    • pp.60-68
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    • 2000
  • The optical constants ($E_g^d$, n, K) of the polycrystalline CdSe thin films deposited on the glass substrate by the electron-beam evaporation technique are determined over 400~2,500 nm photon wavelengths. In order to explain the variation of the optical contents with film thickness and substrate temperatures, the surface microstructural parameter are investigated by AFM (atomic forced microscope( images for the films deposited by different growth conditions. It is shown that the variations of optical constants are close related to changes of the surface morphology of the CdSe thin films. The decrease in the band gap with film thickness is connected with quantum size effects due to increase of the grain size. The refractive index of CdSe films decrease with increasing the grain size of the films, and the dispersion of the refractive index followed a single oscillator model according to the Sellmeier formulation.

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The Electrical Characteristics of Recrystallized Silicon by CW $CO_2$ Laser (CW $CO_2$ 레이저에 의하여 재결정화된 실리콘의 전기적 특성)

  • Park, Jong Tae;Lee, Moon Key;Kim, Bong Ryul
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.24 no.1
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    • pp.79-84
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    • 1987
  • In this study, the recrystallization of polycrystalline silicn by CW CO2 laser is reported. With a variation of CW CO2 laser power, the surface morphology of recrystallized silicon is observed by SEM and the value of resistivity and mobility is obtained by Hall measurement. From the obtained results, it is concluded that the polycrystalline silicon is locally melted at 39W laser power and the reduction of resistivity and the increase of mobility are caused by the increase of grain size and the reduction of the potentical barrier at grain boundaries.

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Effects of Duty Cycle and Pulse Frequency on the Microstructure and Mechanical Properties of TiAlN Coatings (듀티 싸이클 및 펄스 주파수가 TiAlN 코팅막의 미세구조와 기계적 특성에 미치는 영향에 관한 연구)

  • Chun, Sung-Yong;Hwang, Ju Yeon
    • Journal of the Korean Ceramic Society
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    • v.51 no.5
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    • pp.447-452
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    • 2014
  • This paper presents the effects of pulse plasma parameters such as duty cycle and pulse frequency on the properties of TiAlN coatings deposited by asymmetric bipolar pulsed DC magnetron sputtering systems. The results show that, with decreasing duty cycle and increasing pulse frequency, the coating morphology changes from a columnar structure to a dense structure with finer grains. Pulsed sputtered TiAlN coatings showed higher hardness, higher residual stress, and smaller grain sizes than did DC prepared TiAlN coatings. Moreover, residual stress and nanoindentation hardness of pulsed sputtered TiAlN coatings increased with increasing pulse frequency. Meanwhile, the surface roughness decreased continuously with increasing pulsed DC frequency up to 50 kHz.

황동볼트 손상원인 분석사례

  • Jeong, Nam-Geun
    • 열병합발전
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    • s.30
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    • pp.21-25
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    • 2002
  • According to recent Korea Electric Power Company report, yearly distribution line brass cramp bolts failure summed up to 4,400 cases emerging as one of main local break-down causes. Naturally, the need for the investigation was proposed To determine the root cause of the cramp bolt failures, mechanical and metallurgical investigation were performed for 90 samples which collected from various sites. For the understanding of the geometric characteristics, stress distribution was evaluated by CAE program and proof load of each bolts was tested. The SEM&EDS was used for metallurgical investigation. Through the investigation, the root causes of failures were confirmed. All damaged bolts showed intergrannular fracture mode and the all fractured bolt showed ß phase morphology contrast to the a&ß mixture morphology of the non-damaged samples. Additionally, EDS analysis confirmed the existence of lead rich layer on grain boundaries.

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