Electrical Characteristics and Microstructure of Thin Films $BaTiO_3$ depending on The Sintering Temperature

$BaTiO_3$계 박막의 소결온도에 따른 미세구조와 전기적 특성

  • 김덕규 (원평대학교 전자재료공학과) ;
  • 전장배 (원평대학교 전자재료공학과) ;
  • 박춘배 (원평대학교 전자재료공학과) ;
  • 송민종 (광주보건전문대학 의공학과) ;
  • 강용철 (광주보건전문대학 의공학과) ;
  • 박해암 (광주보건전문대학 의공학과) ;
  • 소병문 (광운대학교 전기공학과) ;
  • 김태완 (홍익대학교 전기제어공학과) ;
  • 강도열 (홍익대학교 전기제어공학과)
  • Published : 1997.07.21

Abstract

Thin films of $BaTiO_3$ system were prepared by radio frequency (rf)/dc magnetron sputtering method. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat - treatment temperatures. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films shows that the specimen heat treated in between 900 and 1100[$^{\circ}C$] shows a grain growth. At 1100[$^{\circ}C$], the specimen stops grain-growing and becomes a crystal. A resistivity-temperature characteristics of the specimen depends on the doping concentrations of Mn.

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