• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.14 no.10
• /
• pp.4962-4969
• /
• 2013

The purpose of this experiment is to evaluate of optimized FS techniques for T2 weighted abdominal MRI compared of TSE-SPIR fat suppression and GE-PROSET fat suppression. All MR examinations were performed on a 1.5 T(Philips, Medical System, Achieva) scanner using 16 channel mult-coils. All images were performed in the axial plane using TSE-SPIR and GE-PROSET. The mean SNRs of the retroperitoneal and mesenteric fat for TSE-SPIR and GE-PROSET were 31.50, 4.15 and 32.39, 7.03. The mean CNRs of the bowel and retroperitoneal, mesenteric fat for TSE-SPIR and GE-PROSET were 52.69, 74.54 and 26.12, 68.78). The delineation of bowel wall margins with TSE-SPIR(2.4) and GE-PROSET(1.8) were significantly improved using TSE-SPIR. The delineation of pancreas wall with TSE-SPIR(1.90), GE-PROSET(2.80) were significantly improved using GE-PROSET. In conclusion, TSE-SPIR fat suppression was superior to GE-PROSET fat suppression in T2 WI FS abdominal MRI.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.2
• /
• pp.172-178
• /
• 2016

In this paper, we propose a sub-10 nm Ge/GaAs heterojunction-based tunneling field-effect transistor (TFET) with vertical band-to-band tunneling (BBT) operation for ultra-low-power (LP) applications. We design a stack structure that is based on the Ge/GaAs heterojunction to realize the vertical BBT operation. The use of vertical BBT operations in devices results in excellent subthreshold characteristics with a reduction in the drain-induced barrier thinning (DIBT) phenomenon. The proposed device with a channel length ($L_{ch}$) of 5 nm exhibits outstanding LP performance with a subthreshold swing (S) of 29.1 mV/dec and an off-state current ($I_{off}$) of $1.12{\times}10^{-11}A/{\mu}m$. In addition, the use of the highk spacer dielectric $HfO_2$ improves the on-state current ($I_{on}$) with an intrinsic delay time (${\tau}$) because of a higher fringing field. We demonstrate a sub-10 nm LP switching device that realizes a good S and lower $I_{off}$ at a lower supply voltage ($V_{DD}$) of 0.2 V.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.21 no.5
• /
• pp.876-884
• /
• 2017

The current-voltage characteristics of Silicon(Si), Germanum(Ge), and hetero tunnel field-effect transistors(TFETs) with source-overlapped gate structure was investigated using TCAD simulations in terms of tunneling. A Si-TFET with gate oxide material $SiO_2$ showed the hump effects in which line and point tunneling appear simultaneously, but one with gate oxide material $HfO_2$ showed only the line tunneling due to decreasing threshold voltage and it shows better performance than one with gate oxide material $SiO_2$. Tunneling mechanism of Ge and hetero-TFETs with gate oxide material of both $SiO_2$ and $HfO_2$ are dominated by point tunneling, and showed higher leakage currents, and Si-TFET shows better performance than Ge and hetero-TFETs in terms of SS. These simulation results of Si, Ge, and hetero-TFETs with source-overlapped gate structure can give the guideline for optimal TFET structures with non-silicon channel materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.04b
• /
• pp.180-183
• /
• 2000

Beginning with a brief introduction on near 100 nm or below CMOS devices, this paper addresses novel devices for future sub-100 nm CMOS. First, key issues such as gate materials, gate dielectric, source/drain, and channel in Si bulk CMOS devices are considered. CMOS devices with different channel doping and structure are introduced by explaining a figure of merit. Finally, novel device structures such as SOI, SiGe, and double-gate devices will be discussed for possible candidates for sub-100 nm CMOS.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2018.10a
• /
• pp.381-382
• /
• 2018

Subthreshold swings (SSs) and on-currents of four types of junctionless nanowire tunnel field-effect transistor(JLNW-TFET) are observed. Ge-Si structure for the source-channel junction has the highest drive current among Si-Si, Si-Ge, and Ge-Ge junction, and the drive current increases up to 1000 times compared to others. Minimum SS of Si-Si junction is reduced by up to 5 times more than others.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.626-626
• /
• 2013

P-N 접합에 의해 절연된 게이트를 통해 전류 통로를 제어하는 접합형 전계효과 트랜지스터(Junction Field Effect Transistors; JFETs)는, 입력 임피던스가 크고, 온도에 덜 민감하며, 제조가 간편하여 집적회로(IC) 제조가 용이하고, 동작의 해석이 단순하다는 장점을 가지고 있다. 특히 JFET는 선형적인 전류의 증폭 특성을 가지고 있으며, 잡음이작기 때문에, 감도가 우수한 음향 센서의 증폭회로, 선형성이 우수한 증폭회로, 입력 계측 증폭 회로 등에 주로 사용되고 있다. 기존에 사용되는 JFET 소자는 구조와 제조 공정에 따라서, 컷 오프 전압($V_{cut-off}$)과 드레인-소스 포화 전류($I_{DSS}$)의 변화가 심하게 발생하여, 소자의 전기적 특성 제어가 어렵고, 소자의 수율이 낮다는 문제점이 있다. 본 연구에서는 TCAD 시뮬레이션을 통해 게이트 전압에 의해 채널이 형성되는 채널 층의 상하부에 각각 $Si_xGe_{1-x}$로 이루어진 상부 및 하부 확산 저지층을 삽입한 JFET 소자 형성하여, 게이트 접합부의 접합 영역 확산을 저지하고, 상기 게이트 접합부가 계면에서 날카로운 농도 구배를 갖도록 함으로써, 공정 변화에 따른 전기적 특성의 편차가 작아지는 JFET 소자 구조를 만들어 전기적 특성을 개선하였다. JFET은 채널층에 삽입된 $Si_xGe_{1-x}$ 층의 두께, Ge 함유량 및 n채널층의 두께를 변화하였을 때, off 상태의 게이트-소스 전압이 감소한 반면에 드레인-소스 포화 전류($I_{DSS}$)와 컨덕턴스(gm) 값이 증가하였다. 삽입된 $Si_xGe_{1-x}$층이 Boron이 밖으로 확산되는 현상이 감소하여 채널이 좁아지는 현상을 막아 소자의 전기적 특성을 개선함으로써 제조공정의 변화에 관계없이 컷오프 전압을 정확하고 안정되게 제어할 수 있고 이를 통해 소자의 수율을 높일 수 있을 것으로 기대된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.4
• /
• pp.271-275
• /
• 2011

In this paper, thermal stability of palladium germanide (Pd germanide) is analyzed for high performance Schottky barrier germanium metal oxide semiconductor field effect transistors (SB Ge-MOSFETs). Pd germanide Schottky barrier diodes were fabricated on n-type Ge-on-Si substrates and the formed Pd germanide shows thermal immunity up to $450^{\circ}C$. The barrier height of Pd germanide is also characterized using two methods. It is shown that Pd germanide contact has electron Schottky barrier height of 0.569~0.631 eV and work function of 4.699~4.761 eV, respectively. Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.

• ETRI Journal
• /
• v.28 no.2
• /
• pp.253-256
• /
• 2006

We propose a novel power metal oxide semiconductor field effect transistor (MOSFET) employing a strained-Si channel structure to improve the current drivability and on-resistance characteristic of the high-voltage MOSFET. A 20 nm thick strained-Si low field channel NMOSFET with a $0.75\;{\mu}m$ thick $Si_{0.8}Ge_{0.2}$ buffer layer improved the drive current by 20% with a 25% reduction in on-resistance compared with a conventional Si channel high-voltage NMOSFET, while suppressing the breakdown voltage and subthreshold slope characteristic degradation by 6% and 8%, respectively. Also, the strained-Si high-voltage NMOSFET improved the transconductance by 28% and 52% at the linear and saturation regimes.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.12 no.2
• /
• pp.167-174
• /
• 2012

The circuits including with Optical transceiver and clock data recovery, in this paper, SERDES (SERializer-DESerializer) are implemented to construct a GE-PON burst-mode transceiver supporting IEEE 802.3ah and a jig for measuring the burst-mode characteristics, that is to say, PON upstream optical transmission environment are manufactured to evaluate the performance of transceiver. we verified that the limiting amplifier compensated the gap of max. 26dB optical power by experiments. The startup acquisition lock time is 670ns in case of using VSC7123 and 2300ns in case of S2060 and the data acquisition lock time were measured to be 400ns and 600ns, respectively, in the upstream channel transmission in this work. While on the other, VSC7123 is satisfied with IEEE802.3ah recommendations.

• Journal of Advanced Navigation Technology
• /
• v.1 no.1
• /
• pp.23-34
• /
• 1997

A multi-channel digital GPS receiver has been developed including a RF-to-IF engine (engine 1), a digital signal processing engine (engine 2) with a microprocessor interfacing, and a navigation software. A high speed SiGe heterojunction bipolar transistor (HBT) as a active device has been mounted on chip-on-board (COB) type hybrid ICs such as LNA, mixer, and VCO in RF front-end of the engine 1 board. A 6-channel digital correlator together with a real-time clock and a microprocessor interface has been realized using an Altera Flex 10K FPGA as well as ASIC technology. Navigation software controlling the correlator for GPS signal tracking, retrieval and storing a message retrieval, and position calculation has been implemented. The GPS receiver was tested using a single channel STR2770 simulator. Successful navigation message retrieval and position determination was confirmed.